• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1771-1776
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• 2011

In this paper, as an attempt to improve the preparation conditions of $YBa_2Cu_3Ox$ superconducting bulk samples, the properties of $YBa_2Cu_3Ox$ superconductor depending on the particle size of YBCO powder and $BaPbO_3$ as an additive have been investigated, and a study on the effects of additive to the density, grain alignment, and porosity of samples that affect the critical current of superconductor has been performed. In order to prepare superconductor, $YBa_2Cu_3Ox$ powder synthesized by sol-gel method, showing a size distribution of 0.2~1 ${\mu}m$ was used. The $BaPbO_3$ added to promote grain growth and to decrease porosities and weak links between grain boundaries of $YBa_2Cu_3Ox$ superconductors. In the samples prepared by sol-gel synthesized powder with 10, 20, and 30 wt% conductive $BaPbO_3$ additives, the sample with 20 wt% $BaPbO_3$ obtained the highest critical current of 4.74 A, showing 20 wt% higher critical current than that with solid state synthesized powder.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.6
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• pp.493-498
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• 2016

In the present study, graphene oxide based polyurethane foams were manufactured as a part of the development process of mechanically strengthened polyurethane foam insulation material. This material is used in a liquefied natural gas carrier cargo containment system. The temperature of the containment system is $-163^{\circ}C$. First, graphene oxide was synthesized using the Hummers' method, and it was supplemented into polyol-isocyanate reagent by considering a different amount of graphene oxide weight percent. Then, a bulk form of graphene-oxide-polyurethane foam was manufactured. In order to investigate the cell stability of the graphene-oxide-polyurethane foam, its microstructural morphology was observed, and the effect of graphene oxide on microstructure of the polyurethane foam was investigated. In addition, the compressive strength of graphene-oxide-polyurethane foam was measured at ambient and cryogenic temperatures. The cryogenic tests were conducted in a cryogenic chamber equipped with universal testing machine to investigate mechanical and failure characteristics of the graphene-oxide-polyurethane foam. The results revealed that the additions of graphene oxide enhanced the mechanical characteristics of polyurethane foam. However, cell stability and mechanical strength of graphene-oxide-polyurethane foam decreased as the weight percent of graphene oxide was increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• The Journal of the Petrological Society of Korea
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• v.4 no.1
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• pp.49-58
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• 1995

Staurolite-biotite-andalusite-garnet (SBAG) assemblage and its sub-assemblages (SBA and SBG) commonly occur in the Dueumri Formation near the Chunyang granite, belonging to andalusite and sillimanite zones. The occurrence of the SBAG mineral assemblage is unusual because it is univariant in the $K_2O-FeO-MgO-Al_2O_3-SiO_2-H_2O$ (KFMASH) model system. We used projection and singular value decomposition (SVD) methods to investigate the equilibrium relationship between SBAG and its sub-assemblage. The SVD modelling of single specimen containing the SBAG assemblage suggests no reaction relationship with respect to mass-balance. Thus, the SBAG assemblages are stabilized by non-KFMASH component. On the other hand, the AFM-Mn projection suggests a reaction relationship between SBAG and its sub-assemblage because they intersect each other in this composition space. The SVD modelling, however, suggests no reaction relationship between these assemblages. Thus, the SBAG assemblages are likely to be stabilized by the variation in bulk-rock composition and/or 1.1~2,. The stable occurrence of staurolite in the sillimanite zone is compatible with pressure estimates from the garnet-plagioclase-biotite-muscovite geobarometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of Conservation Science
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• v.29 no.4
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• pp.437-444
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• 2013

We studied for the chemical characterizations of the charred residues obtained from the ancient potteries in the Proto-Three Kingdom period from archaeological sites in Joong-do, Chuncheon. Organic components of the charred residues were extracted and analysed using mass spectrometry and infrared spectroscopy. Lipid profiles from these samples were not identified in gas chromatography-mass spectrometry. Bulk stable isotope analyses of charred residues was used to infer an average values of the foods prepared. The average carbon isotope values (${\delta}^{13}C$) of the residues are $-14.7{\pm}2.8$‰ (ranging from -8.7‰ to -18.4‰, n=9), and nitrogen isotope values (${\delta}^{15}N$) are $6.2{\pm}1.1$‰ (ranging from -4.4‰ to -7.6‰, n=9). This is the first approach to analyse charred residues using stable isotopic method in Korea. Charred food residues on the interior surface of archaeological pottery can provide valuable information about pottery use and dietary habits of its population.

• Journal of the Korean Magnetics Society
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• v.25 no.6
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• pp.175-179
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• 2015

The half-metallicity and magnetism of the (001) surfaces of $(AlP)_1/(CrP)_1$ superlattice were investigated by means of FLAPW (Full-potential Liniarized Augmented Plane Wave) method. We considered four types of (001) surface termination, i.e., Al(S)-, Cr(S)-, P(S)Al(S-1)- and P(S)Cr(S-1)-term systems. We found that only Cr(S)-term system maintains the half-metallicity at the surface as only this system has the calculated magnetic moment of integer number of bohr magnetons. The magnetic moment of Cr(S) atom in the system was $3.02{\mu}_B$ which was increased from the bulk value by the effects of band narrowing and increased spin-splitting at the surface. The electronic density of states of the P(S) atom in the P(S)Al(S-1)-term showed very sharp surface states due to the broken $p_z$ bonds at the surface. We found there is still a strong p-d hybridization between the P(S) and Cr(S-1) layers in the P(S)Cr(S-1)-term which causes a considerable increase of magnetic moment of P(S) atom.

• Korea journal of population studies
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• v.16 no.2
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• pp.125-139
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• 1993

Korea has successfully achieved a lowered fertility level owing to the strong population control policy and effective family planning program. Along with fertility decline and decreased number of children in family, average number of household members has decreased and nontraditional households such as one person household and households composed of unrelated individuals have prolifirated, even though the absolute number of them are found minimal in Korea. However in recent years several data and survey results suggest that one person households are gradually in the increasing trend. The study aimed at investigating the real state of one person households in Korea and next analyzing the proportional distribution of one person households by a few socioeconomic characteristics, thus providing basic for eatablishing far-singhted population and social welfare policy in the future. Korea has experienced high growth rate of economy through government-led development plans starting from the 1960s. During the past three decades, Korea has shifted from the agricultural state to the industrialized one. In compliance with the economic growth, urbanization and industrialization have brought about rural-to-urban migration and a great bulk of young population migrated to urban areas, who are seeking for educational and job opportunities. Korean society has also been under drastic change in every aspect of life involving norms, tradition, and attitude, etc. Therefore, in spite of the prejudice on 'living alone' still remaining, young people gradually leave parents and home, and further form nontraditional households in urban areas. Current increase in the number of one person households is partly attributable to the increase in high female educational attainment and female participation in economic activities. As the industrial structure in Korea changes from primary into secondary and tertiary industries, job opportunities for service/sales and manufacturing are opened to young female labor force in the process of industrialization. Contrary to the formation of one person households by young people, the aged single households are composed when children in family leave one by one because of marriage, education, employment. In particular, a higher proportion of aged female single households occur in rural areas due to the mortality difference by sex. Based on the data released form the 1990 Population and Housing Census and National Fertility and Family Health Survey in 1985 and 1991, the study tried to examine the state of one person households in Korea. According to Census data, the number of one person households increased to 1, 021, 000 in 1990, comprising 9.0 percent of total households. And the survey reveal that among total 11, 540 households, 8.0 percent, 923 households, are composed of one person households. Generally, the proportion of female single households is greater than that of male ones, and a big proportion of one person households is concentrated in the 25-34 age bracket in urban areas and 65 years and more in rural areas. It is shown than one person householders in urban areas have higher educational attainment with 59.2 percent high schooling and over in 1991, Job seeking proved to be the main reason for leaving home and forming one person households. The number of young female single households with higher education and economic self-reliance are found nil and the study did not allow to analyze the causal realtionship between female education and employment and one person household formation. However more research and deep analysis on the causal facors on one person household formation using statistical method are believed to be necessary.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.