• 제목/요약/키워드: bulk deposition

검색결과 232건 처리시간 0.026초

AsGeSeS 박막의 광학적 조건에 따른 저항변화 특성에 대한 연구

  • 남기현;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.248-248
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    • 2010
  • We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

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측온저항체 온도센서용 백금박막의 형성에 관한 연구 (The study on formation of platinum thin films for RTD temperature sensor)

  • 정귀상;노상수
    • E2M - 전기 전자와 첨단 소재
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    • 제9권9호
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    • pp.911-917
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    • 1996
  • Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

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펄스레이저 입사수에 따른 $YBa_2Cu_3O_{7-x}$박막의 표면입자밀도 변화 (Effect of Laser Shot Number on the Surface Particle Density of $YBa_2Cu_3O_{7-x}$ Thin Films by Pulsed Laser Deposition)

  • 서정대;성건용
    • 한국세라믹학회지
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    • 제31권3호
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    • pp.312-320
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    • 1994
  • Effect of the laser shot number on the particulates density of the pulsed laser deposited YBa2Cu3O7-x thin films and the laser irradiated surface morphology of the YBa2Cu3O7-x bulk target have been investigated. Until 100 laser shots of cumulative irradiation, the films has the particulates density of ~103 mm-2. However, after 100 laser shots, the density was increased more than 10 times. This results has been explained by the change of particulate ejection path with the development of conical structure at the target surface.

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RF 대역통과필터 응용을 위한 FBAR 소자 (FBAR devices for RF bandpass filter applications)

  • Giwan Yoon;Park, Sungchang
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2001년도 추계종합학술대회
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    • pp.621-625
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    • 2001
  • 본 논문에서는 압전박막 및 이들의 FBAR 소자 응용에 대한 연구를 발표 한다. FBAR 소자는 상부 및 하부 전극 사이에 압전체가 삽입되어 있는 공진부와 SiO$_2$/W 이 여러층으로 적층되어 있는 음향반사층부분 크게 두 부분으로 구성되어 있다. 시뮬레이션 및 측정을 통하여 제작된 여러가지 FBAR 소자들을 평가하였다. 실험결과 우수한 삽입손실, 반사손실 및 품질계수가 얻어졌다. 따라서 FBAR 기술은 RF 대역 필터 응용을 위해서 대단히 유망한 기술로 생각된다.

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2단계 증착방법을 이용한 ZnO 압전박막 증착 및 특성 분석

  • 정수봉;김수길;홍철광;신영화
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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    • pp.59-63
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    • 2003
  • 체적 음향파 공진기(Film bulk acoustic resonator, FBAR)는 2~10 Ghz 대역의 차세대 이동 통신용 구현에 필수적인 부품이기 때문에 국내외에서 활발한 연구가 진행되고 있다. 본 논문에서는 FBAR 소자 제조를 위한 연구에서 원자층 증착(Atomic layer deposition, ALD) 방법에 의한 ZnO buffer layer 위에 스퍼터링 방법을 이용한 2-step 방법을 사용하여 제조하였다. ALD를 이용한 ZnO buffer layer는 diethylzinc(DEZn)/$H_2O$를 순차적으로 주입하여 증착하였다. 이 때 두 원료물질 사이에 고순도 Ar 가스를 purge gas로 사용하였다. 원료의 주입시간은 1초, 원료간 purge 시간은 23 초로 하고 증착하였다. 2-step 방법을 이용할 경우, 스퍼터링 방법만을 이용하였을 때 보다 우수한 c-축 배향성 및 박막의 표면형상이 관찰되었다. 2-step 방법을 FBAR 소자 제작에 적용할 경우 보다 우수한 특성의 공진기를 제작할 수 있을 것으로 기대된다.

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A Defect Free Bistable C1 SSFLC Devices

  • Wang, Chenhui;Bos, Philip J.
    • Journal of Information Display
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    • 제4권1호
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    • pp.1-8
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    • 2003
  • Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

아르곤 이온 레이저를 이용한 CU의 직접 쓰기 기술 (Laser dissect writing from copper(II) formate using Ar+ laser)

  • 이홍규;이천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.663-666
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    • 2000
  • Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$$.$4H$_2$O), as a precursor, using a focused Ar$\^$+/ laser beam ($\lambda$= 514 nm) on PCB boards and glass substrates. The linewidth and thickness of the lines were investigated as a function of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler (${\alpha}$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameter using probe station and semiconductor analyzer. we compared resistivities of the patterned lines with that of the Cu bulk, respectively.

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Electrical Characteristics of Metal/n-InGaAs Schottky Contacts Formed at Low Temperature

  • 이홍주
    • 한국전기전자재료학회논문지
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    • 제13권5호
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    • pp.365-370
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    • 2000
  • Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

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PLD 기법에 의한 $Na_{0.5}K_{0.5}NbO_{3}$ 박막 제작 (Pulsed Laser Deposition $Na_{0.5}K_{0.5}NbO_{3}$ Thin Film)

  • 최원석;문병무;조중래
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.33-35
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    • 2000
  • Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

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Characterization of p-type transparent conducting $CuAIO_2$ thin film prepared by Pusled Laser Deposition

  • 엄세영;이종철;허영우;이준형;김정주
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 추계학술대회 논문집
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    • pp.105-106
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    • 2007
  • p형 투명 전도막을 만들기 위해 박막화의 가능성 있는 벌크(bulk)상태의 p형 투명 전도 물질을 합성하고, 박막화 하여 p형 투명 전도 물질의 기초적 물성을 조사하여 p형 투명 전도 물질의 개발 가능성을 조사하였다. p-type $CAO_2$ 박막은 열처리를 통하여 얻을 수 있었다. $CAO_2$ 박막은 초기 증착 온도가 $650^{\circ}C$이하에서는 열처리를 통해서도 $CAO_2$상을 얻을 수가 없었고 오직 공기중 분위기에서만 c-axis 배향을 가진 $CuAIO_2$ 단일상 박막을 얻을 수 있었다. $CuAIO_2$ 단일상 박막은 2개의 상이 공존하고 있는 것으로 생각된다.

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