• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.393-397
• /
• 2003

To investigate the effect of AIN c-axis orientation on the resonance performance of film bulk acoustic wave resonators, solidly mounted resonators with crybtallographically different AIN piezoelectric films were prepared by changing only the bottom electrode surface conditions. As increasing the degree of c-axis texturing, the effective electromechanical coupling coefficient ($\kappa$$\_$eff/)$^2$ in resonators increased gradually. The least 4 degree of full width at half maximum in an AIN(002) rocking curve, which corresponds to $\kappa$$^2$$\_$eff/ of above 5%, was measured to be necessary for band pass filter applications in wireless communication system. The longitudinal acoustic wave velocity of AIN films varied with the degree of c-axis texturing. The velocity of highly c-axis textured AIN film was extracted to be about 10200 n/s by mathematical analysis using Matlab.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.31 no.7 s.262
• /
• pp.792-799
• /
• 2007

A newly developed cellular metal based on kagome lattice is an ideal candidate for multifunctional materials achieving various optimal properties. Intensive efforts have been devoted to develop efficient techniques for mass production due to its wide potential applications. Since a variety of imperfections would be inevitably included in the realistic fabrication processes, it is highly important to examine the correlation between the imperfections and material strengths. Previous performance tests were mostly done by numerical simulations such as finite element method (FEM), but only for perfect structures without any imperfection. In this paper, we developed an efficient numerical framework using nonlinear random network analysis (RNA) to verify how the statistical imperfections (geometrical and material property) contribute to the performance of general truss structures. The numerical results for kagome truss structures are compared with experimental measurements on 3-layerd WBK (wire-woven bulk kagome). The mechanical strength of the kagome structures is shown relatively stable with the Gaussian types of imperfections.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.78-83
• /
• 2007

A newly developed cellular metal based on kagome lattice is an ideal candidate for multifunctional materials achieving various optimal properties. Intensive efforts have been devoted to develop efficient techniques for mass production due to its wide potential applications. Since a variety of imperfections would be inevitably included in the realistic fabrication processes, it is highly important to examine the correlation between the imperfections and material strengths. Previous performance tests were mostly done by numerical simulations such as finite element method (FEM), but only for perfect structures without any imperfection. In this paper, we developed an efficient numerical framework using nonlinear random network analysis (RNA) to verify how the statistical imperfections (geometrical and material property) contribute to the performance of general truss structures. The numerical results for kagome truss structures are compared with experimental measurements on 3-layerd WBK (wire-woven bulk kagome). The mechanical strength of the kagome structures is shown relatively stable with the Gaussian types of imperfections.

• Electronics and Telecommunications Trends
• /
• v.5 no.1
• /
• pp.55-70
• /
• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.9
• /
• pp.641-645
• /
• 2013

Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2217-2220
• /
• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1250-1251
• /
• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Applied Science and Technology
• /
• v.30 no.1
• /
• pp.16-34
• /
• 2013

Oleogels may be defined as lipophilic liquid and solid mixtures. The solid lipid materials (oleogelators) with less than 10 wt.% can entrap bulk liquid oil by ways of the formation of network of oleogelators in the bulk oil. The oelogelators can be grouped into two: self-assembly system and crystal particles system. This article reviewed recent work on the formation of oleogels using various types of oleogelators. The fundamental aspects of the formation of lipid network are discussed with a special emphasis on crystal particle based oleogels. The potential applications of oleogels for cosmetics are also described.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.164-168
• /
• 2005

Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

• 한국공간정보시스템학회:학술대회논문집
• /
• 2004.12a
• /
• pp.113-116
• /
• 2004

Assisted by high technologies of information and communication in storing and collecting moving object information, many applications have been developing technical methods to exploit databases of moving objects effectively and variously. Among them, today, Current and Anticipated Future Position Indexing methods manage current positions of moving objects in order to anticipate future positions of them or more complex future queries. They, however, strongly demand update performance as fast enough to guarantee certainty of queries as possible. In this paper, we propose a new indexing mettled derived from the TPR-tree that should has update performance considerably improved, we named it BUR-tree. In our method, index structure can be inserted, deleted, and updated with a number (or bulk) of objects simultaneously rather than one object at a time as in conventional methods. This method is intended to be applied to a traffic network in which vast number of objects, such as cars, pedestrians, moves continuously.