• 제목/요약/키워드: buffer gas

검색결과 234건 처리시간 0.033초

GaN-on-Si 기술을 위한 탄화텅스텐 버퍼층의 성장에 관한 연구 (Investigation on the Growth of Tungsten Carbide Layer as a Buffer for GaN-on-Si Technology)

  • 조성민;최정훈;최성국;조영지;이석환;장지호
    • 한국전기전자재료학회논문지
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    • 제30권1호
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    • pp.1-6
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    • 2017
  • Tungsten carbide (WC) has been suggested as a new buffer layer for the GaN-on-Si technology. We have investigated and optimized the sputtering condition of WC layer on the Si-substrate. We confirmed the suppression of the Si melt-back phenomenon. In addition, surface energy of WC/Si layer was measured to confirm the possibility as a buffer layer for GaN growth. We found that the surface energy(${\gamma}=82.46mJ/cm^2$) of WC layer is very similar to that of sapphire substrate(${\gamma}=82.71mJ/cm^2$). We grow GaN layer on the WC buffer by using gas-source MBE, and confirm that it is available to grow a single crystalline GaN layer.

Electrical and Mechanical Properties of Indium-tin-oxide Films Deposited on Polymer Substrate Using Organic Buffer Layer

  • Han, Jeong-In;Lee, Chan-Jae;Rark, Sung-Kyu;Kim, Won-Keun;Kwak, Min-GI
    • Journal of Information Display
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    • 제2권2호
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    • pp.52-60
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    • 2001
  • The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

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운동량 플럭스 비의 변화에 따른 기체 중심 스월 동축형 분사기의 기체 가진 동특성 연구 (A Study on Dynamic Characteristics of Gas Centered Swirl Coaxial Injector with Acoustic Excitation by Varying Momentum Flux Ratio)

  • 이정호;박구정;윤영빈
    • 한국분무공학회지
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    • 제20권3호
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    • pp.168-174
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    • 2015
  • Combustion instability is critical problem in developing liquid rocket engine. There have been many efforts to solve this problem. In this study, the method was sought through the injector as part of these efforts to suppress combustion instability. If the injector can suppress the disturbance coming from the supply line as a kind of buffer it will serve to reduce combustion instability. Especially we target at gas propellant oscillation in gas-centered swirl coaxial injector. The phenomenon is simulated with acoustic excitation of speaker. The film thickness response at injector exit was measured by using a liquid film electrode. Also the response of spray to the disturbance was observed by high-speed photography. Gas-liquid momentum flux ratio and the frequency of feeding gas oscillation were changed to investigate the effect of these experimental parameters. The trend of response by varying these parameters and the cause of weak points was studied to suggest the better design of injector for suppressing combustion instability.

면방전형 Xe 플라즈마 평판 램프의 방전 및 발광 특성 (Discharge and Luminous Characteristics of Coplanar Type Xe Plasma Flat Lamp)

  • 김혁환;이원종
    • 한국재료학회지
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    • 제21권10호
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    • pp.532-541
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    • 2011
  • The Xe plasma flat lamp, considered to be a new eco-friendly LCD backlight, requires a further improvement of its luminance and luminous efficiency. To improve the performance of this type of lamp, it is necessary to understand the effects of the discharge variables on the luminous characteristics of the lamp. In this study, the luminous characteristics of a coplanartype Xe plasma flat lamp with a teeth-type electrode pattern were analyzed while varying the gas composition, gas pressure and input voltage. The effects of the phosphor layer on the discharge and the luminous characteristics of the lamp were also studied. The luminous efficiency of the coplanar-type Xe plasma flat lamp improved as the Xe input ratio and gas pressure increased. Higher luminous efficiency was also obtained when helium (He) was used as a buffer gas and when a phosphor layer was fabricated on the electrode region. In contrast, the luminous efficiency was reduced with increasing the input voltage. It was found that the infrared emissions from the lamp were affected by the Xe excitation rate in the plasma, the Xe gas density, the collisional quenching of excited Xe species by gas molecules, and the recombination rate between the Xe ions and electrons.

스퍼터링과 펄스 레이저를 이용하여 $CeO_2$완충층 위에 층착된 $YBa_{2}Cu_{3}O_{7-\delta}$박막의 제작 (Fabrication of Thin $YBa_{2}Cu_{3}O_{7-\delta}$ Films on $CeO_2$Buffered Sapphire Substrate Using Combined Sputter and Pulsed Laser Deposition)

  • 곽민환;강광용;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.901-904
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    • 2001
  • For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

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모세관 전지영동법에 의한 굴뚝에서 포집된 NaOH 용액속의 염소이온의 측정 (Determinaton of Chloride Ion Captured into Strong NaOH Solution from Chimney by Capillary Electrophoresis)

  • 임인덕;성용익;김양선;임흥빈
    • 한국대기환경학회지
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    • 제15권3호
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    • pp.327-333
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    • 1999
  • Determination of chloride ion in concentrated NaOH solution by capillary electrophoresis has been studied. The analysis was performed by indirect UV absorption detection using chromate buffer at 254nm. The matrix effect of the sample has been observed so that the sensitivity in strong NaOH solutaion has decreased up to 10% of that in distilled water. The pH effect of the sample on the sensitivity of CE peaks has been investigated. The method for increasing the sensitivity have been investigated and the optimum pH and concentration of the buffer were 7.5 and 10mM, respectively. A cationic surfactant cetyltrimethylammonium bromide(CTAB), was added to a buffer solution in order to reverse the electroosmotic flow(EOF) in the capillary. This results in a short analysis time and better peak shapes. Using this optimum condition, the determination of chloride ion in real environmental sample has been performed, which is captured in strong NaOH absorbent prepared for absorbing gas from chimney. The standard addition method has been applied for the quantitative analysis, and it was obtained the good reproducibility.

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PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering

  • Liu, Yan-Yan;Jin, Hu-Jie;Park, Choon-Bae;Hoang, Geun-C.
    • Transactions on Electrical and Electronic Materials
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    • 제10권3호
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    • pp.89-92
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    • 2009
  • High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

KSTAR TOKAMAK을 위한 저온시스템의 설계 (The Design of Cryogenic System for KSTAR TOKAMAK)

  • 김동락;오영국;정영수;이정민;최창호;임기학;허남일;김양수;박영민
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2001년도 학술대회 논문집
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    • pp.48-49
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    • 2001
  • Cryogenic technology is one of the key technologies for fusion reactor equipped with superconducting coil for plasma confinement. The KSTAR(Korea Superconducting Tokamak Advanced Research)Project is in progress since 1996. Major parameters of the KSTAR tokamak are : major radius 1.8m, minor radius 0.5m, toroidal field 3.5 Tesla and plasma current 2MA with a strongly shaped plasma cross-section and double -null diverter. Considering practical engineering constraints, the KSTAR device is designed for a pulse length of 300 sec in up-graded operation mode but in the initial configuration would provide a pulse length of 20 sec provided by the poloidal coil system in base-line operation mode. The cryogenic system is composed as follows : cold box, helium compressor system, distribution box, helium gas buffer tank, helium gas purifying system, gas recovery system, liquid helium storage dewar, current lead box, current bus line and liquid nitrogen storage tank.

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Chiral Separation on Sulfonated Cellulose Tris(3,5-dimethylphenylcarbamate)-coated Zirconia Monolith by Capillary Electrochromatography

  • Lee, Jeong-Mi;Jang, Myung-Duk;Park, Jung-Hag
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2651-2656
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    • 2012
  • Sulfonated cellulose tris(3,5-dimethylphenylcarbamate) (SCDMPC)-coated zirconia monolith (ZM) was used as the chiral stationary phase in capillary electrochromatography for separation of enantiomers of ten chiral compounds in acetonitrile (ACN)-phosphate buffer mixtures as the eluent. Influences of the ACN content, buffer concentration and pH on chiral separation have been investigated. Separation data on SCDMPC-ZM have been compared with those on CDMPC-ZM. Resolution factors were better on SCDMPC-ZM than CDMPC-ZM while retention factors were in general shorter on the former than the latter. Best chiral resolutions on SCDMPC-ZM were obtained with the eluent of 50% ACN containing 50 mM phosphate at pH around 4.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition

  • Yang, Sung-Ho;Park, Yong-Pil;Jang, Kyung-Uk;Oh, Geum-Gon;Lee, Joon-Ung
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.97-100
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    • 2000
  • Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

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