• 제목/요약/키워드: buffer gas

검색결과 234건 처리시간 0.032초

RF 스퍼터링으로 Si 기판위에 제작된 ZnO 박막에서 ZnO 버퍼층의 가스분위기 영향 (Effects of the Gas Atmosphere of ZnO Buffer Layers in the ZnO films grown on Si Substrates by RF Magnetron Sputtering)

  • 박태은;조형균;공보현;홍순구
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.656-661
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    • 2005
  • The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

방전여기 KrF 레이저의 완충가스 영향에 대한 이론 해석 (Theoretical Analysis of Buffer Gas Effects of a Discharge Excited KrF Laser)

  • 최부연;이주희
    • 한국광학회지
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    • 제1권1호
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    • pp.33-39
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    • 1990
  • 방전여기 방식의 KrF 엑사이머 레이저의 컴퓨터 시뮬레이션 프로그램을 개발하여 방전 중의 $KrF^*$ 형성, 탈여기 및 흡수반응 등에 대한 완충가스의 영향에 관해 해석하였다. He 가스와 Ne 가스의 경우 $KrF^*$ 생성효율은 각각 7.5%, 19%였으며, $KrF^*$ 탈여기는 충전전압 30kV에서 각각 45, 30%의 비율을 차지하였다. 그러나 흡수과정에서는 완충가스의 영향이 10% 이하였다.

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포화 압축 벤토나이트 내 기체 이동 현상 관측을 위한 기체 주입 시험 (Gas Injection Experiment to Investigate Gas Migration in Saturated Compacted Bentonite)

  • 김정태;이창수;이민형;김진섭;강신항
    • 터널과지하공간
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    • 제34권2호
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    • pp.89-103
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    • 2024
  • 처분 환경에서는 혐기성 부식, 방사선 분해, 미생물 분해와 같은 다양한 원인으로 처분용기와 완충재의 경계면에서 기체가 발생할 수 있다. 기체의 발생 속도가 완충재 내부에서의 확산 속도보다 빠를 경우, 완충재 내부에 기체가 압축되어 공극 압력이 증가함으로써 완충재의 물리적 손상을 유발할 수 있다. 특히 이때 발생한 균열을 통해 기체돌파현상이라 불리는 급격한 기체 이동 현상과 함께 방사성 핵종이 누출될 가능성이 있다. 따라서 처분 시스템의 안전성 평가를 위해서는 이러한 기체 발생 및 이동 현상에 대한 이해가 필수적이다. 이 연구에는 완충재 내 기체 이동 현상 규명을 위한 시험 장치를 문헌 연구를 통해 구축하고, 이를 활용하여 한국형 처분 시스템의 완충재 후보 물질 중 하나인 Bentonile WRK (Clariant Ltd.) 분말로 제작한 압축 시료에 대한 기체 주입 시험을 수행하였다. 시험 결과, 완충재 내 기체돌파현상 발생 지점에서 일반적으로 관측되는 특성인 응력 및 압력의 급격한 상승 경향이 뚜렷하게 관찰되었다. 또한 완충재 팽윤으로 기인한 응력의 범위는 4.7~9.1 MPa이었으며, 기체 유입 압력으로 간주할 수 있는 기체돌파현상 발생 시의 압력은 약 7.8 MPa로 확인되었다. 구축된 장치는 향후 완충재의 초기 물성 및 기체 주입 실험 초기 조건에 대한 데이터베이스 구축을 위한 다양한 실험에 활용할 수 있을 것으로 기대된다.

$CO_2$ Laser Induced Decomposition of 1-Bromo-3-Chloropropane

  • Byoung Soo Chun;Nam Woong Song;Kwang Yul Choo
    • Bulletin of the Korean Chemical Society
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    • 제11권3호
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    • pp.214-220
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    • 1990
  • We have studied the Infrared Multiphoton Dissociation (IRMPD) of 1-bromo-3-chloropropane by using the pulsed $CO_2$ laser. The product yields and the HCl/HBr branching ratios in IRMPD of $BrCH_2CH_2CH_2Cl$ are studied under the focused beam geometry as a function of buffer gas (He) pressure, laser energy, and photolysing wavelength. It is observed that the total dissociation yield has a laser energy dependence of 1.8-2.0 power order and the branching ratio is very slightly dependent on the pulse energy for the laser lines employed. The dependences of total dissociation yield and branching ratio on the buffer gas pressures show that the dissociation yield monotonically decreases and the branching ratio slightly decreases with the increase of the buffer gas pressure. The Energy-Grained Master Equation (EGME) was applied to explain the laser pulse energy and the buffer gas pressure(He) dependence of the dissociation yield and the branching ratio.

The Mechanical and Optical Properties of Diamond-like Carbon Films on Buffer-Layered Zinc Sulfide Substrates

  • Song, Young-Silk;Song, Jerng-Sik;Park, Yoon
    • The Korean Journal of Ceramics
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    • 제4권1호
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    • pp.9-14
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    • 1998
  • Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

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Investigation of Ne and He Buffer Gases Cooled Ar+ Ion Clouds in a Paul Ion Trap

  • Kiai, S.M. Sadat;Elahi, M.;Adlparvar, S.;Nemati, N.;Shafaei, S.R.;Karimi, Leila
    • Mass Spectrometry Letters
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    • 제6권4호
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    • pp.112-115
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    • 2015
  • In this article, we examine the influences of Ne and He buffer gases under confined Ar+ ion cloud in a homemade Paul ion trap in various pressures and confinement times. The trap is of small size (r0 = 1 cm) operating in a radio frequency (rf) voltage only mode, and has limited accuracy of 13 V. The electron impact and ionization process take place inside the trap and a Faraday cup has been used for the detection. Although the experimental results show that the Ar+ ion FWHM with Ne buffer gas is wider than the He buffer gas at the same pressure (1×10-1 mbar) and confinement time is about 1000 μs, nevertheless, a faster cooling was found with He buffer gas with 500 μs. ultimetly, the obtanied results performed an average cloud tempertures reduced from 1777 K to 448.3 K for Ne (1000 μs) and from 1787.9 K to 469.4 K for He (500 μs)

Infrared Multiphoton Dissociation of ${CF_2}HCl$: Laser Fluence Dependence and the Effect of Intermolecular Collisions

  • Song, Nam-Woong;Shin, Kook-Joe;Lee, Sang-Youb;Jung, Kyung-Hoon;Choo, Kwang-Yul;Kim, Seong-Keun
    • Bulletin of the Korean Chemical Society
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    • 제12권6호
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    • pp.652-658
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    • 1991
  • The effect of intermolecular collisions in the infrared multiphoton dissociation (IRMPD) of difluorochloromethane was investigated using He, Ar, and $N_2$ as buffer gases. The reaction probability for IRMPD of difluorochloromethane was measured as a function of laser fluence and the buffer gas pressure under unfocused beam geometry. It was observed that the reaction probability was initially enhanced with the increase of buffer gas pressure up to about 20 torr, but showed a decline at higher pressures. The reaction probability increases monotonically with the laser fluence, but the rate of increase diminishes at higher fluences. An attempt was made to simulate the experimental results by the method of energy grained master equation (EGME). From the parameters that fit the experimental data, the average energy loss per collision, $<{\Delta}E>_d$, was estimated for the He, Ar, and $N_2$ buffer gases.

Cu/CuO/Polyimide 시스템의 접착 및 계면화학 반응 (Adhesion and Interface Chemical Reactions of Cu/CuO/Polyimide System)

  • 이경운;채홍철;최철민;김명한
    • 한국재료학회지
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    • 제17권2호
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    • pp.61-67
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    • 2007
  • The magnetron reactive sputtering was adopted to deposit CuO buffer layers on the polyimide surfaces for increasing the adhesion strength between Cu thin films and polyimide, varying $O_2$ gas flow rate from 1 to 5 sccm. The CuO oxide was formed through all the $O_2$ gas flow rates of 1 to 5 sccm, showing the highest value at the 3 sccm $O_2$ gas flow rate. The XPS analysis revealed that the $Cu_2O$ oxide was also formed with a significant ratio during the reactive sputtering. The adhesion strength is mainly dependent on the amount of CuO in the buffer layers, which can react with C-O-C or C-N bonds on the polyimide surfaces. The adhesion strength of the multi-layered Cu/buffer layer/polyimide specimen decreased linearly as the heating temperature increased to $300^{\circ}C$, even though there showd no significant change in the chemical state at the polyimide interface. This result is attributed to the decrease in surface roughness of deposited copper oxide on the polyimide, when it is heated.

MOCVD 법에 의해 제조된 $CeO_2$ 버퍼층 증착 거동의 기판 의존성 (Substrate dependence of the deposition behavior of $CeO_2$ buffer layer prepared by MOCVD method)

  • 전병혁;최준규;정우영;이희균;홍계원;김찬중
    • Progress in Superconductivity
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    • 제7권2호
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    • pp.130-134
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    • 2006
  • Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

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벤토나이트 완충재 내 기체 이동의 거동 특성 관련 연구 동향 소개 (Introduction to Researches on the Characteristics of Gas Migration Behavior in Bentonite Buffer)

  • 강신항;김정태;이창수;김진섭
    • 터널과지하공간
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    • 제31권5호
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    • pp.333-359
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    • 2021
  • 고준위방사성폐기물 처분시스템에서는 처분용기 인근에서 용기 금속 물질의 부식 등 여러 이유로 인해 수소, 라돈 등의 기체가 발생할 수 있다. 기체 발생 속도가 투수계수가 낮은 벤토나이트 완충재 공극에서의 기체 확산 속도보다 커질 경우, 형성된 기체가 축적된다. 기체 압력이 증가하여 유입 압력에 도달하면 완충재 내부로 기체의 팽창 흐름 및 이류가 발생하게 된다. 기체의 급격한 팽창 흐름 발생 시 방사성 핵종이 완충재 외부로 유출될 가능성이 있으므로, 처분시설의 설계 과정에서 점토 기반 물질에서의 기체 유동의 영향성 및 공학적방벽의 건전성을 평가하기 위해 기체 이동 현상에 대한 거동 특성을 명확하게 규명할 필요가 있다. 전세계적으로 벤토나이트 완충재 내 기체 이동 현상 규명을 위한 실험적 연구와 이를 모사할 수 있는 전산 수치 모델 개발 연구가 활발히 진행되고 있다. 본 기술보고에서는 현재까지 수행된 기체 주입 시험 및 전산 수치모델 관련 주요연구를 소개하고 향후 기체 이동 현상 규명을 위한 연구 수행 방향에 대해 정리하였다.