• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.33-39
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• 1990

By developing a computer simulation code for discharge excited KrF excimer laser, we analyzed mainly the effects of buffer gas for the $KrF^*$ formation. the $KrF^*$ relaxation. and the absorption of the laser radiation. The $KrF^*$ formation efficiency were found to be 7.5%, 19% and the $KrF^*$ relaxation kinetic reactions were found to be 45%, 30% at the charging voltage of 30 KV and He. Ne buffer gas. respectively. But the absorption of the 248 nm laser radiation were less than 10% by the buffer gas.er gas.

• Tunnel and Underground Space
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• v.34 no.2
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• pp.89-103
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• 2024

In the disposal environment, gases can be generated at the interface between canister and buffer due to various factors such as anaerobic corrosion, radiolysis, and microbial degradation. If the gas generation rate exceeds the diffusion rate, the gas within the buffer may compress, resulting in physical damage to the buffer due to the increased pore pressure. In particular, the rapid movement of gases, known as gas breakthroughs, through the dilatancy pathway formed during this process may lead to releasing radionuclide. Therefore, understanding these gas generation and movement mechanism is essential for the safety assessment of the disposal systems. In this study, an experimental apparatus for investigating gas migration within buffer was constructed based on a literature review. Subsequently, a gas injection experiment was conducted on a compacted bentonite block made of Bentonile WRK (Clariant Ltd.) powder. The results clearly demonstrated a sharp increase in stress and pressure typically observed at the onset of gas breakthrough within the buffer. Additionally, the range of stresses induced by the swelling phenomenon of the buffer, was 4.7 to 9.1 MPa. The apparent gas entry pressure was determined to be approximately 7.8 MPa. The equipment established in this study is expected to be utilized for various experiments aimed at building a database on the initial properties of buffer and the conditions during gas injection, contributing to understanding the gas migration phenomena.

• Bulletin of the Korean Chemical Society
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• v.11 no.3
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• pp.214-220
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• 1990

We have studied the Infrared Multiphoton Dissociation (IRMPD) of 1-bromo-3-chloropropane by using the pulsed $CO_2$ laser. The product yields and the HCl/HBr branching ratios in IRMPD of $BrCH_2CH_2CH_2Cl$ are studied under the focused beam geometry as a function of buffer gas (He) pressure, laser energy, and photolysing wavelength. It is observed that the total dissociation yield has a laser energy dependence of 1.8-2.0 power order and the branching ratio is very slightly dependent on the pulse energy for the laser lines employed. The dependences of total dissociation yield and branching ratio on the buffer gas pressures show that the dissociation yield monotonically decreases and the branching ratio slightly decreases with the increase of the buffer gas pressure. The Energy-Grained Master Equation (EGME) was applied to explain the laser pulse energy and the buffer gas pressure(He) dependence of the dissociation yield and the branching ratio.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Mass Spectrometry Letters
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• v.6 no.4
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• pp.112-115
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• 2015

In this article, we examine the influences of Ne and He buffer gases under confined Ar⁺ ion cloud in a homemade Paul ion trap in various pressures and confinement times. The trap is of small size (r₀ = 1 cm) operating in a radio frequency (rf) voltage only mode, and has limited accuracy of 13 V. The electron impact and ionization process take place inside the trap and a Faraday cup has been used for the detection. Although the experimental results show that the Ar⁺ ion FWHM with Ne buffer gas is wider than the He buffer gas at the same pressure (1×10^-1 mbar) and confinement time is about 1000 μs, nevertheless, a faster cooling was found with He buffer gas with 500 μs. ultimetly, the obtanied results performed an average cloud tempertures reduced from 1777 K to 448.3 K for Ne (1000 μs) and from 1787.9 K to 469.4 K for He (500 μs)

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.652-658
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• 1991

The effect of intermolecular collisions in the infrared multiphoton dissociation (IRMPD) of difluorochloromethane was investigated using He, Ar, and $N_2$ as buffer gases. The reaction probability for IRMPD of difluorochloromethane was measured as a function of laser fluence and the buffer gas pressure under unfocused beam geometry. It was observed that the reaction probability was initially enhanced with the increase of buffer gas pressure up to about 20 torr, but showed a decline at higher pressures. The reaction probability increases monotonically with the laser fluence, but the rate of increase diminishes at higher fluences. An attempt was made to simulate the experimental results by the method of energy grained master equation (EGME). From the parameters that fit the experimental data, the average energy loss per collision, $<{\Delta}E>_d$, was estimated for the He, Ar, and $N_2$ buffer gases.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.61-67
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• 2007

The magnetron reactive sputtering was adopted to deposit CuO buffer layers on the polyimide surfaces for increasing the adhesion strength between Cu thin films and polyimide, varying $O_2$ gas flow rate from 1 to 5 sccm. The CuO oxide was formed through all the $O_2$ gas flow rates of 1 to 5 sccm, showing the highest value at the 3 sccm $O_2$ gas flow rate. The XPS analysis revealed that the $Cu_2O$ oxide was also formed with a significant ratio during the reactive sputtering. The adhesion strength is mainly dependent on the amount of CuO in the buffer layers, which can react with C-O-C or C-N bonds on the polyimide surfaces. The adhesion strength of the multi-layered Cu/buffer layer/polyimide specimen decreased linearly as the heating temperature increased to $300^{\circ}C$, even though there showd no significant change in the chemical state at the polyimide interface. This result is attributed to the decrease in surface roughness of deposited copper oxide on the polyimide, when it is heated.

• Progress in Superconductivity
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• v.7 no.2
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• Tunnel and Underground Space
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• v.31 no.5
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• pp.333-359
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• 2021

Gases such as hydrogen and radon can be generated around the canister in high-level radioactive waste disposal systems due to several reasons including the corrosion of metal materials. When the gas generation rate exceeds the gas diffusion rate in the low-permeability bentonite buffer, the gas phase will form and accumulate in the engineered barrier system. If the gas pressure exceeds the gas entry pressure, gas can migrate into the bentonite buffer, resulting in pathway dilation flow and advective flow. Because a sudden occurrence of dilation flow can cause radionuclide leakage out of the engineered barrier of the radioactive waste disposal system, it is necessary to understand the gas migration behavior in the bentonite buffer to quantitatively evaluate the long-term safety of the engineered barrier. Experimental research investigating the characteristics of gas migration in saturated bentonite and research developing numerical models capable of simulating such behaviors are being actively conducted worldwide. In this technical note, previous gas injection experiments and the numerical models proposed to verify such behaviors are introduced, and the future challenges necessary for the investigation of gas migration are summarized.