• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10a
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• pp.469-475
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• 1991

In this paper, we suggest the exact perturbation analysis(Exact_PA) technique with respect to the buffer storage in tandem queueing networks, through which the optimal buffer storage design problem is considered. The discrete event dynamic equations for the departure time of a customer are presented together with the basic properties of Full Out(FO) and No Input(NI) with respect to the buffer storage. The new perturbation rules with respect to the buffer storage are suggested, from which the exact perturbed path can be obtained. The optimal buffer storage problem is presented by introducing a performance measure consisting of the throughput and the buffer storage cost. An optimization algorithm maximizing this performance measure is derived by using the Exact_PA technique. The proposed perturbation analysis technique and the optimization algorithm are validated by numerical examples.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.23-32
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• 1996

This paper proposes a new buffer management scheme to service delay-sensitive traffic and loss-sensitive traffic fairly in ATM networks. The proposed scheme uses tow buffers for delay-sensitive traffic and loss-sensitive traffic. To satisfy the average delay time of delay-sensitive traffic, cells in real-time buffer are served first. When congestion occurs in nonreal-time buffer, low loss priority cell in real-time buffer can be pushed out by high loss priority cell in nonreal-time buffer can be transferred to real-time buffer considering threshold value in real-time buffer. Using computer simulation, the existing methods and proposed scheme are compared and analyzed with respect to cell loss rate and average delay time. Simulation results show that the proposed scheme have superior performance to conventional schemes.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.5 no.6
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• pp.1147-1165
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• 2011

We present a simple and cost effective rate control scheme for streaming video over a wireless channel by using the information of mobile devices' buffer level. To prevent buffer fullness and emptiness at receivers, the server should be able to adjust sending rate according to receivers' buffer status. We propose methods to adjust sending rate based on the buffer level and discrete derivative of the buffer occupancy. To be compatible with existing network protocols, we provide methods to adjust sending rate by changing the inter-packet delay (IPD) at the server side. At every round-trip time, adjustments of sending rate are made in order to achieve responsiveness to sudden changes of buffer availabilities. A series of simulations and the prototype system showed that the proposed methods did not cause buffer overflows and it can maintain smoother rate control and react to bandwidth changes promptly.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.766-769
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• 2002

We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.91-91
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• 2011

박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.431-434
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• 2016

Tris-HCl buffer solution is extensively used in biochemistry and molecular biology to maintain a stable pH for biomolecules such as nucleic acids and proteins. Here we report on the high-precision THz dielectric spectroscopy of a 10 mM Tris-HCl buffer. Using a double Debye model, including conductivity of ionic species, we measured the complex dielectric functions of Tris-HCl buffer. The fast relaxation time of water molecules in Tris-HCl buffer is ~20% longer than that in pure water while the slow relaxation time changes little. This means that the reorientation dynamics of Tris-HCl buffer with such a low Tris concentration is quite different from that of pure water.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.445-448
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• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

• Proceedings of the Korea Society for Simulation Conference
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• 1998.10a
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• pp.128-132
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• 1998

This research is concerned with buffer management in a multi-cell FMS(Flexible Manufacturing System) with an AGVS(Automated Guided Vehicle System). To reduce blocking and starving caused by breakdowns, variablility in process times, and diversity of part routing, buffer is needed. Due to the high per unit buffer cost, which primarily consists of floor space and equipment cost, the total capacity of buffers in an FMS is very limited. Therefore, proper buffer management can provide a high system efficiency. This paper presents a buffer management model for a multi-cell FMS with an AGVS and a simulation study to compare the proposed model to a conventional buffer management model in a job shop FMS.