• Title/Summary/Keyword: broad-band

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A Novel Predistorter design using a Balanced Type IM3 Generator (평형 구조 혼변조 발생기를 이용한 전치왜곡 선형화기 설계)

  • 정형태;김상원;김철동;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.65-70
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    • 2004
  • This paper presents a novel linearization scheme for a nonlinear RF amplifier It is based on the amplitude modulation with envelope signal. The 3rd order distortion generator is composed of two FETs and it adopts a balanced structure for the purpose of main carrier cancellation. The amplitude and phase of the IM3 component can be controlled at RF band. This predistorter is implemented and tested at the KOREA PCS Tx. band (1840∼1870MHz). Experimental results of two-tone test show that the IM3 cancellation is achieved about 30-40 ㏈ for the wide dynamic range. The adjacent channel power ratio is improved by over 10 ㏈ at the broad-band CDMA signal with a peak to average power ratio of l0㏈, and this improvement is maintained through a wide range of output power levels.

Synthesis and Light Emission from ZnO-Coated Silicon Nanorods

  • Kim, Hyun-Su;Jin, Chang-Hyun;Park, Sung-Hoon;Kim, Hyoun-Woo;Lee, Chong-Mu
    • Bulletin of the Korean Chemical Society
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    • v.33 no.7
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    • pp.2333-2337
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    • 2012
  • We report the synthesis and thermal annealing of Si-core/ZnO-shell nanorods using a two-step process comprising the metal-assisted electroless etching of Si and the sputter deposition of ZnO. Transmission electron microscopy and X-ray diffraction analysis showed that the cores of the annealed core-shell nanorods were single crystal diamond cubic-type Si, whereas the shells of the annealed core-shell nanorods were single crystal wurtzite-type ZnO. The PL spectra of Si nanorods consisted of a broad red emission band and a weaker blue emission band. The major emission band of Si nanorods was shifted from 700 nm (in the red region) to 440 nm (in the violet region) by ZnO coating. The violet emission of the core-shell nanorods was enhanced in intensity considerably by annealing in an oxidizing atmosphere. The origin of the PL enhancement by annealing is also discussed.

Interior Crisis in a Chaotic Band (혼돈띠에서의 내부고비현상)

  • Kim, Chil-Min;Park, Jong-Dae;Jo, Chang-Ho
    • The Journal of Natural Sciences
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    • v.6 no.1
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    • pp.79-87
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    • 1993
  • In the map of period-doubling bifurcation, stable fixed points bifurcate to $2^n$ fixed points, and in the chaotic region, the chaotic bands merge to 1/$2^n$ bands. In a typical map, the chaotic bands expand to a broad chaotic band during the merging process, so called crisis. In this paper, interior crises appearing during the merging process will be discussed by using our map and will be analyzed the characteristics of the phenomenon by obtaining the Lyapunov Exponents.

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The Design of 50 MHz~3 GHz Wide-band Amplifier IC using SiGe HBT (SiGe HBT를 이용한 50 MHz~3 GHz 대역폭의 광대역 증폭기 IC 설계)

  • 이호성;김병성;박수균
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.1
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    • pp.68-73
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    • 2002
  • This paper presents the implementation of wide-band RFIC amplifier operating from near 50 MHz to 3 GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated through the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine adjustment in the low frequency range. Fabricated amplifier shows 12 dB gain with 1 dB fluctuation and P1 dB reaches 15 dBm at 850 MHz.

Synthesis and Application of the Novel Azomethine Metal Complexes for the Organic Electroluminescent Devices

  • Kim, Seong Min;Kim, Jin Sun;Sin, Dong Myeong;Kim, Yeong Gwan;Ha, Yun Gyeong
    • Bulletin of the Korean Chemical Society
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    • v.22 no.7
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    • pp.743-747
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    • 2001
  • New azomethine metal complexes were synthesized systematically and characterized. Beryllium, magnesium, or zinc ions were used as a central metal cation and aromatic azomethines (L1-L4) were employed as a chelating anionic ligand. Emission peaks o f the complexes in both solution and solid states were observed mostly at the region of 400-500 nm in the luminescence spectra, where blue light was emitted. Three of them (BeL1 (Ⅰ), ZnL2 (Ⅱ), and ZnL3 (Ⅲ)) were sublimable and thus were applied to the organic light-emitting devices (OLED) as an emitting layer, respectively. The device including the emitting layer of Ⅰ exhibited white emission with the broad luminescence spectral range. The device with the emitting layer of Ⅱ showed blue luminescence with the maximum emission peak at 460 nm. Their ionization potentials, electron affinities, and electrochemical band gaps were investigated with cyclic voltammetry. The electrochemical gaps of 2.98 for I, 2.70 for Ⅱ, and 2.63 eV for Ⅲ were found to be consistent with their respective optical band gaps of 3.01, 2.95 and 2.61 eV within an experimental error. The structure of OLED manufactured in this study reveals that these complexes can work as electron transporting materials as well.

Synthesis of the Nano-sized SrAl2O4 Phosphors by Wet Processing and its Photoluminescence Properties (SrAl2O4계 축광재료의 습식공정에 의한 나노분말 합성 및 발광특성)

  • Kim, Jung-Sik
    • Journal of the Korean Ceramic Society
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    • v.45 no.8
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    • pp.477-481
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    • 2008
  • $Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

GaN Nanowire Growth on Si Substrate by Utilizing MOCVD Methods (MOCVD 방법에 의한 Si 기판위 GaN 나노선의 성장)

  • Woo, Shi-Gwan;Shin, Dae-Keun;O, Byung-Sung;Lee, Hyung-Gyoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.11
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    • pp.848-853
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    • 2010
  • We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of $880^{\circ}C$, growth time of 30 min, TMG source flow rate of 10 sccm have resulted in dense nanowires on the surface, however further increase of growth time or TMG flow rate has not increased the length of nanowire but has formed nanocrystals. On the contrary, the increase of ammonia flow has increased the length of nanowires and the coverage of nanowire over the surface. The shape of nanowire is needle-like with a Ni droplet at its tip; the length is tens of micron with more than 40 nm in diameter. Low temperature photoluminescence obtained from the sample at optimum growth condition has revealed several peaks related to exciton decay near band-edge, but does not show any characteristic originated from one dimensional quantum confinement. Strong and broad luminescence at 2.2 eV is observed from dense nanowire samples and this suggests that the broad band is related to e-h recombination at the surface state in a nanowire. The current result is implemented to the nanowire device fabrication by nanowire bridging between micro-patterned neighboring Ni catalysis islands.

A Study on Broad-Band Design of EM Absorberfor for Anechoic Chamber (전파무향실용 전파흡수체의 광대역 설계 및 제작에 관한 연구)

  • 손준영;배재영
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.343-343
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    • 2001
  • 최근 전자산업과 전파통신산업의 발달에 따라 불요전자파에 의한 전자파장해가 심각한 수 준에 이르게 되었다. 그 결과 국 . 내외 전자파환경은 나날이 악화되고 있으며, 이로 인한 사 회적 문제가 점차 증가되고 있는 실정이다. 이에 대한 대책으로 CISPR(Comite Internationale S Special des Perturbations Radioelectrique), FCC (Federal Communications Commissions) A ANSI(Amercian National Standards Institute) 둥이 주축이 되어 국제 규정이 제정되어 각종 전자기기들에 대해 방사(EMI) 및 내성(EMS)의 규제가 강화되고 있다. 그러나 국제규정이 요구하는(30 MHz - 18 GHz) 주파수 범위에서의 EMIjEMS 측정을 하기 위해 광대역(Broad-band) 전파무향실(Anechoic Chamber)이 필요하지만1 기존의 Ferrite T Tile 또는 그리드형 전파홉수체는 20 dB 이상 전파를 홉수할 수 잇는 주파수 대역이 30 M MHz - 400 MHz 또는 780 MHz에 불과하기 때문에 상기의 조건을 만족하는 전파무향실 을 구성하기에는 곤란한 실정이다. 본 논문에서는 국제 규격을 만족하는 전파무향실을 위한 광대역 전파홉수체를 개발하기 위해, 다충형으로 구성하고, 전파흡수체의 형상을 변화시켜 등가재료정수법을 사용하여 설계하고 그 특성을 평가함을 그 목적으로 하였다. 따라서 본 논문에서는 본 연구실에서 기폰에 제안한바 있는, 금속판 위에 타일형 페라이 트 충, 그 위에 원추절단형 페라이트 층과 원통형 페라이트 층을 적층시칸 형상의 전파홉수 체는 30 MHz - 6 GHz 정도까지 커버할 수 있으나, 1 GHz 부근의 주파수 대에서 16 dB 정도의 홉수능 밖에 가지지 못하였다. 이를 개선하기 위해, 금속판 위에 타일형 페라이트 층 을 형성하고 그 위에 원통형 페라이트 충, 원추절단형 페라이트 충I 원통형 페라이트 충, 타 원형 페라이트 충을 형성한 새로운 형태의 전파홉수체를 제안하였다. 본 논문에 제안한 새로운 형태의 전파흡수체의 시물레이션 결과 30 MHz - 20 GHz의 주파수 범위에서 전반적으로 25 dB이상의 전파흡수능을 가짐을 확인하였으며/ 특히 기폰에 제안한 전파홉수체와 비교하면,1GHz 부끈에서의 전파홉수능을 10 dB 이상 개선하였다. 나아가서/ 실재로 제작한 전파흡수체의 측정된 주파수특성이 시율레이션에 의한 이론치와 3 30 MHz - 6 GHz의 범위에서 잘 일치함을 확인하였다. 또한y 전파 홉수체의 전체 높이는 2 27 mm 밖에 되지 않으므로 본 연구에서 제안한 전파 홉수체를 사용할 경우 전파무향실의 유 효공간 확보에 매우 유리한 이점을 가진다

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Fast Measurement using Wave-Cutoff Method

  • Seo, Sang-Hun;Na, Byeong-Geun;Yu, Gwang-Ho;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.30-30
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    • 2011
  • The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

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Optimal Location Selection Algorithm of MSAP for Tactical Communication Networks (전술통신 환경 구축을 위한 MSAP의 최적위치 선정 알고리즘)

  • Cho, Sang-Mok;Kang, Jung-Ho;Kim, Jae-Hyun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.12B
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    • pp.1736-1743
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    • 2011
  • In Network Centric Warfare (NCW) environment, having a tactical communication network which provides high data exchange rate is very important. In the process, Korean Army developed Mobile Subscriber Access Point (MSAP) which is based on the commercial Wireless BroadBand (Wibro). MSAP is a vehicle attached base station which provide high data exchange communication environment in a given area. Thus MSAP can provide high data exchange rate and mobility to accomplish missions in the battlefield more effectively. In this paper, we propose an operational strategy of using MSAP to provide tactical communication network in the battlefield. The idea is to find the optimal location point of the MSAP in the operational area where all the troops in the operational area can be supported by the MSAP with a minimum number of MSAP. Since the current Korean Army's basic idea of using MSAP is just distribute this MSAP to each troop, so by applying our strategy we can save MSAP devices for more flexible operation. We will show our strategy's benefits through the mathematical model and the algorithm of the presented problem.