• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1276-1278
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• 1998

In this paper, aging characteristics of silicone rubber used for outdoor insulation have been investigated with regards to sunlight effect. For this purpose, silicone rubbers were aged under the artificial sunlight by use of xenon arc lamp(1500W) and various tests were performed such as tracking, breakdown, contact angle, stress, strain. And then, in order to elucidate the changes of material, analysis have been followed as follows; FT-IR, SEM and EDS. Regarding the effect of the sunlight, it was obs that the surface of test samples are severely da with decreased hydrophobicity, tracking resistan breakdown strength.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1216-1217
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• 2008

A description is given of impregnated silicone rubber used in accessories for application on outdoor termination (EB-A). We examines the effects of swelling and mechanical/electrical characteristics for impregnated silicone rubber to develop slip on type sleeve of silicone material. There are semi-conductive silicone rubber and insulation silicone rubber. This examination is monitored as a function of the viscosity and temperature of oil during 30hr. We measure elongation at breakdown and AC breakdown strength and volume resistivities of the oil-impregnated silicone rubbers. The measured values are compared to initial value as function of stress relief cone.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.12
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• pp.640-645
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• 2006

A 22.9kV/50MVA class high temperature superconducting(HTS) power cable system was developed in Korea. For the optimization of electrical insulation design for a HTS cable, it is necessary to investigate the ac breakdown impulse breakdown and partial discharge inception stress of the liquid nitrogen/laminated polypropylene paper(LPP) composite insulation system. They were used to insulation design of the model cable for a 22.9kV class HTS power cable and the model cable was manufactured. The insulation test of the manufactured model cable was evaluated in various conditions and was satisfied standard technical specification in Korea. Base on these experimental data, the single and 3 phase HTS cable of a prototype were manufactured and verified.

• Journal of the Korean Society of Visualization
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• v.4 no.2
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• pp.51-58
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• 2006

A boundary layer visualization was carried out in order to investigate the influence of Reynolds number on an oscillating airfoil. An NACA 0012 airfoil is sinusoidally pitched at the quarter chord point with oscillation amplitude of ${\pm}6^{\circ}$. A smoke-wire technique was employed to visualize the boundary layer and the near-wake. The freestream velocities are 1.98, 2.83 and 4.03m/s and corresponding chord Reynolds numbers are $2.3{\times}10^4,\;3.3{\times}10^4$, and $4.8{\times}10^4$, respectively. As the reduced frequency of K=0.1 is fixed, the corresponding frequency of an airfoil was adjusted in each case. The results reveal that the point at which the shear stress in an unsteady boundary layer separation disappears does not correspond with the position of the breakdown of the boundary layer, and that the breakdown of the boundary layer occurs further downstream.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.256-257
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• 2008

Recently, with the increase of demand of electricity, electric cable or electric transfer machine are rapidly developed and meet the demand with the extra high voltage and massive capacity, the dangers of electrical accident of insulator are increasing by the electric stress, insulation degradation and insulation breakdown in insulator. In this paper, it is investigated that the temperature dependance of dielectric strength in nano-composites. We obtained that breakdown voltage of 0.4 [wt%] specimens is higher than the other $SiO_2$ content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.542-543
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• 2005

In this paper, describes the fabrication and dielectric insulation characteristics experimental results of the model cable for the 22.9kV class HTS power cable. The model cable were tested with partial discharge(PD), AC and impulse withstand voltage in liquid nitrogen($LN_2$) and liquid nitrogen pressure. In these test results, PD inception stress and AC, impulse breakdown strength increase as the pressure of the liquid nitrogen increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.179-179
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• 2011

관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.343-346
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• 1998

Degradation characteristics of the Pr-based ZnO varistor with $Y_2O_3$content (0.0-4.0 mol!%j were investigated. It was appeared that the variation of the J-E characteristics in the reverse direction before and after the applied stress with increasing $Y_2O_3$ content was larger than that of the forward direction but the variation was extrernly small. For all varistor, the leakage current with the stress time during the applied stress somewhat increased initialy but afterthat was almost constant or slightly decreased. The overall varistor voltage and nonlinear coefficient were less than 5%. Especially, in the case of Pr-based ZnO varistor containing 2.0 mol% to 4.0 mol% $Y_2O_3$, the variation of breakdown voltage and nonlinear coefficient was less than 1% and 5%. respectively. As a result, they showed good stability.