• 제목/요약/키워드: breakdown potential

검색결과 186건 처리시간 0.024초

4D객체 활용에 의한 건설공사 리스크 인자별 중요도 시각화 기법연구 (Visualizing Method of 4D Object by Weight of Construction Risk Factors)

  • 강인석;박서영;김창학;문현석
    • 한국건설관리학회:학술대회논문집
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    • 한국건설관리학회 2006년도 정기학술발표대회 논문집
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    • pp.571-573
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    • 2006
  • 본 연구에서는 리스크관리 인자별 중요도와 4D 객체 시각화방법론을 통한 리스크관리 정보의 시각화 모델을 제안한다. 리스크관리 프로세스 모델은 WBS(Work Breakdown Structure)와 RBS(Risk Breakdown Structure)를 통해 구성되며, RBS에서 분류된 리스크 인자는 퍼지 분석기법을 통해 중요도(Weight)가 분석된다. 이 중요도는 4D 시각화를 위한 건설공사 객체(Object)의 속성 데이터로 지정된다. 또한 Object의 4D 시각화를 위한 방안으로는 4D 시뮬레이션기법이 활용되며, 등급별로 구분된 리스크 인자의 중요도와 4D 시뮬레이션을 통해 직접적인 건설공사 부위별 리스크관리 수준 확인과 부위별 리스크 인자의 시각화가 가능하도록 하는 방법론을 제시한다.

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배터리 응용을 위한 1.5V 단일전원 256Kb EEPROM IP 설계 (Design of 256Kb EEPROM IP Aimed at Battery Applications)

  • 김영희;김일준;하판봉
    • 한국정보전자통신기술학회논문지
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    • 제10권6호
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    • pp.558-569
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    • 2017
  • 본 논문에서는 MCU 내장형 1.5V 단일전원 256Kb EEPROM IP는 배터리 응용을 위해 설계되었다. 기존의 body-potential 바이어싱 회로를 사용하는 cross-coupled VPP (Boosted Voltage) 전하펌프회로는 erase와 program 모드에서 빠져나올 때 5V cross-coupled PMOS 소자에 8.53V의 고전압이 걸리면서 junction breakdown이나 gate oxide breakdown에 의해 소자가 파괴될 수 있다. 그래서 본 논문에서는 cross-coupled 전하펌프회로의 출력 노드는 VDD로 프리차징시키는 동시에 펌핑 노드들을 각 펌핑 단의 입력전압으로 프리차징하므로 5V PMOS 소자에 5.5V 이상의 고전압이 걸리지 않도록 하므로 breakdown이 일어나는 것을 방지하였다. 한편 256Kb을 erase하거나 program하는 시간을 줄이기 위해 all erase, even program, odd program과 all program 모드를 지원하고 있다. 또한 cell disturb 테스트 시간을 줄이기 위해 cell disturb 테스트 모드를 이용하여 256Kb EEPROM 셀의 disturb를 한꺼번에 인가하므로 disturb 테스트 시간을 줄였다. 마지막으로 이 논문에서는 erase-verify-read 모드에서 40ns의 cycle 시간을 만족하기 위해 CG disable 시간이 빠른 CG 구동회로는 새롭게 제안되었다.

사료의 아미노산 조성에 따른 돼지의 단백질 축적을 나타내는 수치모델 (A Simulation Model for the protein Deposition of Pigs According to Amino Acid Composition of Feed Proteins)

  • 이옥희;김강성
    • 한국식품영양과학회지
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    • 제28권1호
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    • pp.178-190
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    • 1999
  • This study was conducted to develop a simulation model for the growth dynamics of pigs and to describe quantitatively protein deposition depending on the amino acid composition of feed protein. In the model it is assumed that the essential processes that determine the utilization of feed protein in the whole body are protein synthesis, breakdown of protein, and oxidation of amino acid. Besides, it is also assumed that occurrence of protein deposition depends on genetic potential and amino acid composition of feed protein. The genetic potential for the protein deposition is the maximum capacity of protein synthesis, being dependent on the protein mass of the whole body. To describe the effect of amino acid composition of feed on the protein deposition, a factor, which consist of ten amino acid functions and lie between 0 and 1, is introduced. Accordingly a model was developed, which is described with 15 flux equations and 11 differential equations and is composed of two compartments. The model describes non linear structure of the protein utilization system of an organism, which is in non steady state. The objective function for the simulation was protein deposition(g/day) cal culated according to the empirical model, PAF(product of amino acid functions) of Menke. The mean of relative difference between the simulated protein deposition and PAF calculated values, lied in a range of 11.8%. The simulated protein synthesis and breakdown rates(g/day) in the whole body showed a parallel behavior in the course of growth.

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수중에 잠긴 접지전극 주변에서의 이온화에 의한 전위저감 및 에너지방출 (Potential Reduction and Energy Dispersion Due to Ionization Around the Submerged Ground Rod)

  • 최종혁;안상덕;양순만;이복희
    • 조명전기설비학회논문지
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    • 제23권1호
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    • pp.92-99
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    • 2009
  • 심매설 접지봉의 경우 장마철에 빗물이나 지하수와 접촉하는 경우가 발생한다. 수중에 잠겨있는 접지극에 서지 전압이 인가되면 접지극 주변에서 이온화 현상이 발생하게 된다. 지중이나 수중에서의 이온화 현상은 접지 시스템의 에너지적인 특성에 의해 영향을 받는다. 이 논문의 목적은 축소된 전해 수조를 이용하여 임펄스 전압에 의한 접지시스템의 과도특성을 파악하는데 있다. 매틀랩 프로그램을 활용하여 이온화에 의한 전위저감과 방출된 에너지를 측정하여 정량적인 분석을 수행하였다. 접지극 끝단의 최대 전압은 물의 저항률과 Marx형 전압발생장치의 충전전압에 따라 다양하게 나타났다. 접지극 끝단의 전위는 절연파괴전압에 이르기 전 인가전압에서 대략 절반까지 감소하였다. 또한 절연파괴가 발생하기 전 인가된 에너지의 절반 이상의 에너지가 이온화에 의해 접지극을 통하여 방출되었다.

높은 항복전압(>1,000 V)을 가지는 Circular β-Ga2O3 MOSFETs의 특성 (Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V))

  • 조규준;문재경;장우진;정현욱
    • 한국전기전자재료학회논문지
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    • 제33권1호
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    • pp.78-82
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    • 2020
  • In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.

극저온 헬륨가스의 절연파괴 및 연면방전 특성 (Electrical Breakdown and Flashover Characteristics of Gaseous Helium at Cryogenic Temperature)

  • 곽동순
    • 한국초전도ㆍ저온공학회논문지
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    • 제14권3호
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    • pp.38-42
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    • 2012
  • Fixtures such as bushings in terminations of high temperature superconducting(HTS) power cable systems are subjected to high voltages, which have to transition from ambient to cryogenic temperatures. As such it is imperative to ensure the integrity of the dielectrics under all operating conditions, including thermal aspects brought about by the passage of current. Gaseous helium(GHe) at high pressure is regarded as a potential coolant for superconducting cables. The dielectric aspects of cryogenic helium gas are both complex and demanding. In this experimental study we looked at the interface between a smooth epoxy surface and high pressure helium gas in a homogeneous electric field. The alternating current(AC) flashover voltages of epoxy samples are presented. The results have been analyzed by using Weibull statistics. In addition to the behavior of the epoxy in gaseous helium as a function of pressure and temperature we also present data of the characteristics of the epoxy in mineral oil and in liquid nitrogen($LN_2$). The breakdown characteristics of a uniform field gap in gaseous helium as a function of pressure and temperature under AC, direct current(DC) and lightning impulse voltages are also given. Electric field calculations have been made for one of the experimental geometries in an attempt to explain some of the anomalies in the experimental results.

고온초전도 기기응용을 위한 모의 퀜치 환경에서 액체질소의 절연파괴 특성 (Electrical Breakdown characteristics of $LN_2$ under simulated Quenching conditions for application of HTS apparatus)

  • 백승명;정종만;이정원;곽동순;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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    • pp.187-191
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    • 2002
  • The characteristics of Electrical breakdown liquid nitrogen($LN_2$) were studied under simulated Quenching conditions for application of HTS apparatus. The experimental results for various quench condition revealed that the breakdown voltage of $LN_2$ with bubble flow velocity and gap spacing, Also, it did a electric field and potential distribution interpreting at the liquid nitrogen when the bubble existed, The plots of equipotential lines for three cases are also shown.

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Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance

  • Lho, Young-Hwan;Yang, Yil-Suk
    • ETRI Journal
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    • 제34권1호
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    • pp.134-137
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    • 2012
  • Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

다수의 전계제한링을 갖는 planar소자의 해석적 모델 (An analytic model for planar devices with multiple floating rings)

  • 배동건;정상구
    • 전자공학회논문지A
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    • 제33A권6호
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    • pp.136-143
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    • 1996
  • A simple analytic model for the planar junctions with multiple foating field limiting rings(FLR) is presented which yields analytic expressions for the breakdown voltage and optimum ring spacings. the normalized potential of each ring is derived as a function of the normalized depletion width and the ring spacing. Based on the assumption that the breakdwon occurs simulataneously at cylindrical junctions of FLR structure where the peak sruface electric fields are equal, the optimum ring spacings are determined. The resutls are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI and with the experimental data reported. The normalized experessions allow a calculation of breakdown voltage and optimum spacing over a broad range of junction depth and background doping levels.

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항공기용 연료계통 압력조절밸브의 FMEA를 적용한 신뢰성 설계 (Reliability Design Using FMEA for Pressure Control Regulator of Aircraft Fuel System)

  • 배보영;이재우;변영환
    • 한국항공운항학회지
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    • 제17권1호
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    • pp.24-28
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    • 2009
  • The reliability assessment is performed for Pressure Control Regulator of Aircraft Fuel System using reliability procedure which consists of the reliability analysis and the Failure Modes and Effects Analysis(FMEA). The target reliability as MTBF(Mean Time Between Failure) is set to 5000hr. During the reliability analysis process, the system is categorized by Work Breakdown Structure(WBS) up to level 3, and a reliability structure is defined by schematics of the system. Since the components and parts that have been collected through EPRD/NPRD. The predicted reliability to meet mission requirements and operating conditions is estimated as 4375.9hr. To accomplish the target reliability, the components and parts with high RPN have been identified and changed by analyzing the potential failure modes and effects. By changing the configuration design of components and parts with high-risk, the design is satisfied target reliability.

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