• Journal of The Korean Society of Inherited Metabolic disease
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• v.16 no.3
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• pp.141-147
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• 2016

Hypophosphatasia is caused by the mutations in ALPL, which encodes tissue-nonspecific alkaline phosphatase (TNSALP). It can be inherited either in an autosomal dominant or recessive manner. Clinically, hypophophosphatasia is characterized by skeletal findings similar to those in rickets or osteomalacia, but serum alkaline phosphatase levels are decreased in the affected patients. Hypophosphatasia can be classified into six clinical forms according to age at diagnosis and severity of symptoms: perinatal lethal, infantile, childhood, adult, odontohypophosphatasia, and perinatal benign. As being a very rare disease, only one case has been reported in Korean population. Here we describe a case with perinatal benign hypophosphatasia with recessive ALPL mutations. Bowing of lower legs was detected in prenatal period and low serum alkaline phosphatase level was noted after birth. During the follow-up evaluation for 4.5 years, bone mineralization and legs bowing were improved but the growth retardation was persistent. As the recombinant bone-targeted human TNSALP became available, the clinical improvement of the affected patients is expected including the case described here with this treatment. More efforts are needed to identify the cases affected by hypophosphatasia.

• Physical Therapy Korea
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• v.25 no.3
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• pp.19-26
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• 2018

Background: Genu varum is also known as bow leg. It is a deformity wherein there is lateral bowing of the legs at the knee. it does give rise to pain, and persistent bowing can often give rise to discomfort in knees, hips and ankles. Objects: This study investigated the effect of narrow squats on the knee joint during a gait and distance between the knees of person with genu varum. Methods: This study analyzed 23 patient with genu varum that grade III, 12 narrow squat group and 11 genenal squat group in motion analysis laboratory. The subjects of experiment took gait before and after intervention, the range of joint motion, moment of knee joint adduction, power, distance of the knees were measured. And in order to make an analysis between groups, an paiered t-test and independent t-test was carried out. For statistical significance testing, it was decided that significance level ${\alpha}$ be .05. Results: It was shown that the group of narrow squat exercise significantly decreased in distance of knees (p<.05),In moment of adduction of knee joint, it was shown to significantly decrease in two groups (p<.05), was significantly decreased in adduction, abduction, and rotation (p<.05). In relation of peak-knee adduction moment and valgus angle, there was significant decrease in narrow squat group (p<.05). Conclusion: When the above result of study were examined, a narrow squat exercise given to the genu varum patients significantly decreased the distance between the knees, range of knee adduction and abduction, knee adduction moment, knee power. And stability gains through the decrease of excursion of knee medial part be effective for the correction of genu varum deformation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.222-222
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• 2013

GaN 기반 반도체는 넓은 bandgap을 가지고 있어 가시광부터 자외선까지 다양한 광전소자에 유용하게 사용된다. 광전소자중 발광다이오드의 경우 대부분 사파이어 기판위에 성장된다. 하지만 사파이어와 GaN의 격자 불일치 및 열팽창 계수의 차이로 인해 고품질의 GaN를 성장하기가 어렵다. 특히 열팽창 계수의 차이는 GaN 성장 공정이 고온에서 이루어지기 때문에 성장후 상온으로 온도가 떨어질 때 웨이퍼의 bowing을 발생시키고 동시에 dislocation이나 crack과 같은 결함이 생성되 GaN 성장막의 품질을 떨어트린다. 웨이퍼의 크기가 커지면 커질수록 웨이퍼 bowing은 커져 이에 대한 연구는 중요하다. 본 논문에서 2인치 사파이어 기판위에 성장된 GaN의 bow특성을 알아보기 위해 먼저 simulation을 하였고 실제로 성장된 GaN 웨이퍼와 비교를 하였다. c-plane 사파이어 기판위에 성장된 c-plane GaN의 bow특성을 알아보기 위해 성장 온도 $1,100^{\circ}C$에서 GaN두께를 1 ${\mu}m$에서 10 ${\mu}m$까지 1 ${\mu}m$씩 변화시켜 가며 simulation을 하였다. GaN두께가 1 ${\mu}m$일때는 bow가 11 ${\mu}m$, 6 ${\mu}m$ 일때는 54.7 ${\mu}m$, 10 ${\mu}m$ 일때는 108 ${\mu}m$를 얻어 GaN두께가 1 ${\mu}m$씩 증가할 때 마다 bow가 약 10 ${\mu}m$씩 증가하였다. 성장온도에 대한 영향을 알아보기 위해 $700^{\circ}C$에서 $1,200^{\circ}C$까지 $100^{\circ}C$씩 증가시켜며 bow특성 simulation을 하였다. 6 ${\mu}m$성장된 GaN의 경우 성장온도가 $100^{\circ}C$ 씩 증가할 때 bow는 약 6 ${\mu}m$ 증가하였다. 실제 성장된 c-plane GaN웨이퍼와 비교하기 위해 GaN을 각각 3 ${\mu}m$와 6 ${\mu}m$를 성장시켰고 high resolution x-ray diffraction장비를 사용하여 bow를 측정한 결과 각각 28 ${\mu}m$와 61 ${\mu}m$ 였고 simulation결과는 각각 33 ${\mu}m$와 65.5 ${\mu}m$를 얻어 비슷한 결과를 보였다. c-plane 사파이어 기판위에 성장된 c-plane GaN는 방향에 무관하게 동일한 bow 특성을 가지는 반해 r-plane 사파이어 기판위에 성장된 a-plane GaN는 방향에 따라 다른 bow특성을 보인다. a-plane GaN 이방향성적인 bow 특성을 알아보기 위해 simulation을 하였다. $1,100^{\circ}C$에서 a-plane GaN을 성장할 때 두께가 1 ${\mu}m$ 증가할 때마다 bow가 c축 방향으로는 21.7 ${\mu}m$씩 증가하였고 m축 방향으로는 11.8 ${\mu}m$ 씩 증가하여 매우 큰 이방향성적인 bow 특성을 보였다. 실제 r-plane 사파이어 기판위에 성장된 a-plane GaN의 bow를 측정하였고 simulation 결과와 비교해 보았다.

• Journal of Mechanical Science and Technology
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• v.20 no.1
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• pp.76-84
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• 2006

Arrayed ultrasonic sensors based on the piezoelectric thin film (lead-zirconate-titanate: Pb($Zr_{0.52}Ti_{0.48})O_{3}$) having composite membrane structure are fabricated. Different thermal and elastic characteristics of each layer generate the residual stress during the high temperature deposition processes, accomplished diaphragm is consequently bowing. We present the membrane deflection effects originated from the residual stress on the resonant frequencies of the sensor chips. The resonant frequencies ($f_r$) measured of each sensor structures are located in the range of $87.6{\sim}111\;kHz$, these are larger $30{\sim}40\;kHz$ than the resultant frequencies of FEM. The primary factors of $f_r$ deviations from the ideal FEM results are the membrane deflections, and the influence of stiffness variations are not so large on that. Membrane deflections have the effect of total thickness increase which sensitively change the $f_r$ to the positive direction. Stress generations of the membrane are also numerically predicted for considering the effect of stiffness variations on the $f_r$.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.21 no.2
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• pp.405-413
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• 1991

The authors observed a 33-year-old male patient who had suffered from osteopetrosis with maxillary osteomyelitis. The obtained results were as follows: 1. Physical examination revealed hepatosplenomegaly and bowing legs. 2. Nearly all bones of the entire skeleton showed unusual increased radiodensity and the paranasal sinuses were markedly obliterated. 3. There were seveal old fractured sites in the femur and hip bones and subluxation of hip joint. 4. The radiodensity of both jaws were prominently increased and there were many malformed teeth and impacted teeth. 5. Bone scan revealed multiple, irregularly increased uptakes in large joints and long bones.

• Journal of Genetic Medicine
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• v.9 no.2
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• pp.89-92
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• 2012

Campomelic dysplasia (CMD) is a rare, often lethal, genetic disorder characterized by multiple congenital anomalies and abnormal development of the reproductive organs in males. Mutations in the SOX9 gene are known to cause CMD. We present a Korean CMD girl with a normal 46,XX karyotype and a female reproductive organ phenotype. She was born at 2.35 kg at 38 weeks of gestation and showed characteristic phenotypes, including cleft palate, micrognathia, hypertelorism, flat nasal bridge, congenital bowing of limbs, hypoplastic scapulae, deformed pelvis, and 11 pairs of ribs. She also had an atrioseptal defect of the heart and marked laryngotracheomalacia requiring tracheostomy and tracheopexy. SOX9 mutation analysis revealed the presence of a novel nonsense mutation, $p.Gln369^*$, and the patient was genetically confirmed to have CMD. Although she showed marked failure to thrive and neurodevelopmental delay, she is now 40 months of age and is the only surviving patient with CMD in Korea.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.43.1-43.1
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• 2010

In the crystalline silicon solar cells, the full area aluminum_back surface field(BSF) is routinely achieved through the screen-printing of aluminum paste and rapid firing. It is widely used in the industrial solar cell because of the simple and cost-effective process to suppress the overall recombination at the back surface. However, it still has limitations such as the relatively higher recombination rate and the low-to-moderate reflectance. In addition, it is difficult to apply it to thinner substrate due to wafer bowing. In the recent years, the dielectric back-passivated cell with local back contacts has been developed and implemented to overcome its disadvantages. Although it is successful to gain a lower value of surface recombination velocity(SRV), the series resistance($R_{series}$) becomes even more important than the conventional solar cell. That is, it is a trade off relationship between the SRV and the $R_{series}$ as a function of the contact size, the contact spacing and the geometry of the opening. Therefore it is essential to find the best compromise between them for the high efficiency solar cell. We have investigated the optimal design for the local back contact by using PC1D simulation.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.52 no.7
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• pp.421-428
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• 2003

After the cable is installed, many geometric factors, such as bowing types of the cable and the length difference of the cable between each minor section will cause the impedance unbalance between cables. The impedance unbalance will increase or decrease the sheath circulating currents, which are critical to human safety and sustaining the capabilities of electric power. Accordingly, in this paper, a new method is also proposed to reduce the sheath circulating currents and an reduction equipment according to the theory of the new method is developed. The reduction equipment is tested when the cable is on service. The test results show that it can reduce the sheath circulating currents by up to 97.8［%］. This confirms the validation of the new method and the reduction equipment, and assures the safe operation of the transmission cables. In order to illustrate the safe operation of the cable with new current reduction equipment at transient state due to lightning and single line-to-ground fault, extensive simulations have been made. Then the protection scheme of sheath circulating currents reduction equipment is proposed by adopting the new device of RDP(Reduction Device Protector).

• Journal of the Korean Society of Costume
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• v.66 no.8
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• pp.61-77
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• 2016

This study is to understand the meaning, the location, and the construction of Hyeonhun (玄纁) through the records and relics of the Chosun Dynasty. Hyeonhun means farewell gifts for the dead. Hyeonhun was very personal and was considered to be essential ritual supplies. it was newly made for not only first funeral(初葬), but also the second funeral(改葬), was individually made as well as in the couple funeral(夫婦合葬). the Hyeonhun ritual was performed while dressed in a simabok(緦麻服). The ritual started with washing of the hands(盥手) and deep bowing(再拜) twice. The Hyeonhun was placed on the lid of the inner coffin among the 3 coffins in Chosun tomb's way. The Hyeon was placed on the right side and the Hun on the left side of the lid.(玄右纁左). Hyeonhun are comprised of one, two, five of ten pieces. Most of the excavated Hyeonhun were two pieces : Hyeonhunsokbaek(玄纁束帛) consist of ten pieces, of which six were Hyeons and four were Huns. The records indicated that the materials used to make Hyeonhun was silk, but the excavated relics satin and twill, single gauze in the excavated relics advanced than the records.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.3
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.