• Title/Summary/Keyword: bottom-contact

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Triisopropylsilyl pentacene organic thin-film transistors by ink-jet printing method

  • Park, Young-Hwan;Kang, Jung-Won;Kim, Yong-Hoon;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1135-1138
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    • 2006
  • By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of $0.016\;cm^2/Vs$ and the anisole HMDS-treated device shows the highest $I_{on}/I_{off}$ ratio of $10^5$.

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Effect of the Hydrophobicity of Hybrid Gate Dielectrics on a ZnO Thin Film Transistor

  • Choi, Woon-Seop;Kim, Se-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.257-260
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    • 2010
  • Zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were prepared by the use of injector type atomic layer deposition. Two hybrid gate oxide systems of different polarity polymers with silicon oxide were examined with the aim of improving the properties of the transistors. The mobility and threshold voltage of a ZnO TFT with a poly(4-dimethylsilyl styrene) (Si-PS)/silicon oxide hybrid gate dielectric had values of 0.41 $cm^2/Vs$ and 24.4 V, and for polyimide/silicon oxide these values were 0.41 $cm^2/Vs$ and 24.4 V, respectively. The good hysteresis property was obtained with the dielectric of hydrophobicity. The solid output saturation behavior of ZnO TFTs was demonstrated with a $10^6$ on-off ratio.

Effect of Channel Scaling on Zinc Oxide Thin-Film Transistor Prepared by Atomic Layer Deposition

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.253-256
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    • 2010
  • Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.

ZnO TFT with Organic Dielectric (유기절연체를 사용한 ZnO 박막트랜지스터)

  • Choi, Woon-Seop
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.56-56
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    • 2008
  • ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

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Electrical and thermal characteristics of PRAM with thickness of phase change thin film (상변화 박막의 두께에 따른 상변화 메모리의 전류 및 열 특성)

  • Choi, Hong-Kyw;Kim, Hong-Seung;Lee, Seong-Hwan;Jang, Nak-Won
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.1
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    • pp.162-168
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    • 2008
  • In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

High Speed Measurement of Ball Height Data for Ball Grid Arrays (BGA(Ball Grid Array) 높이 데이타의 고속 측정)

  • Cho Tai-Hoon;Joo Hyo-Nam
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.1-4
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    • 2006
  • Recently, Ball Grid Arrays(BGAs) are getting used more frequently for a package type. The connectors on a BGA consist of a large number of small solder balls in a grid shape on its bottom side. However, since balls of BGAs mounted on PCBs are not visible, inspection before mounting them is indispensable. High speed non-contact 3D measurement technologies are necessary far real-time measurement of ball height, the most important inspection item. In this paper, an accurate 3D data acquisition system for BGAs is proposed that can acquire 3D profile at high speed using a 3D smart camera and laser slit ray projection. Some clipping and morphological filtering operations are employed to remove spiky error data, which occur due to reflections from some ball area to camera direction.

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High Performance of Printed CMOS Type Thin Film Transistor

  • You, In-Kyu;Jung, Soon-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.17.2-17.2
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    • 2010
  • Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

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Case Study of Intermittent Engine Hesitation Fault Diagnosis By CKPS Fault (LPI차량에서 CKPS불량으로 주행 중 간헐적인 엔진부조 현상의 고장진단)

  • Kim, Sung Mo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.6
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    • pp.624-629
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    • 2014
  • The purpose of this study is to carry out the task of engine hesitation which occurred intermittently in driving due to the defective CKPS of LPI vehicles. As the result of the wrong data from the equipment of D-logger, the signal error of CKPS caused the engine hesitation. We performed a study in the followings to analyze and investigate the cause effectively. First, we have investigated the control wiring harness and connector pin contact defect inspection. Second, we have inspected the defection of CKPS separately. From this study, it was found that the engine hesitation were caused by the bad durability and we have showed how to diagnosis the fault of the engine hesitation intermittently while driving. Therefore, it is determined that we have to improve the durability of the CKPS through a strict quality control and to increase the reliability.

열압착 공정을 통해 형성된 나노와이어와 금속전극간의 기계적/전기적 접촉특성 분석

  • Lee, Won-Seok;Park, In-Gyu;Lee, Ji-Hye
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.536-536
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    • 2012
  • 나노와이어는 센서, 메모리소자, 태양전지등과 같은 다양한 소자로 응용이 되고 있다. Bottom-up 방법으로 길러진 나노와이어들을 금속전극 위에 정렬 및 접합시킬 때, 나노와이어와 금속전극간의 기계적 접합강도와 안정적인 전기적 특성이 매우 중요하다. 본 연구에서는 열압착 공정과 솔더전극(Cr/Au/In/Au, Cr/Cu/In/Au)을 사용함으로써, 나노와이어를 금속전극에 압입시켜 강한 기계적 접합강도와 안정적인 전기적 특성을 얻을 수 있는 공정을 제안하였다. 나노와이어와 금속 전극간의 접합부 분석을 위해 scanning electron microscopy (SEM)와 transmission electron microscopy (TEM)을 이용하였으며, 기계적 특성은 lateral force microscopy (LFM), 전기적 특성은 semiconductor analyzer (Keithley 4200-SCS)를 사용하여 측정하였다. 접합강도 측정결과 lateral force가 나노와이어에 가해질 때 나노와이어가 파괴되는 힘에서도 나노와이어와 금속전극간의 접합부파괴가 일어나지 않았다. 또한 나노와이어와 금속전극간의 전기적 접촉특성은 안정적인 ohmic contact을 이루었다.

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A study on folding chairs' structure (접이식 의자의 구조 연구)

  • 강명선;조숙경
    • Journal of the Korea Furniture Society
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    • v.13 no.1
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    • pp.42-47
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    • 2002
  • The folding chairs are one of the most necessary furniture for satisfying the moderns' wants which is utilized for limited space rationally. These folding chairs are variously used in interior spaces such as offices, dining areas, and resting areas. They are very easy to move around, so that quiet useful in out door areas, too. Moreover, they play an important role in public spaces as supplementary furniture. The folding chairs have one or several axes, and they are classified according to type of axes like below. 1. Method of divide seating board into 2 and fold, 2. Method of folds seating board and lay on bottom of backboard, 3. Method of fold back board and lay on top of seating board, 4. Method of fold into contact with left and right, 5. Method of gathering legs into one and fold. The folding chairs have to be easy to operate, firm and safe, light for moving around easily, designed for able to change units whenever they have damaged. Change of residential spaces according to the trend towards the nuclear family maximized necessity of limited spaces' use. Therefore, this study provides insights for development of new methods' of folding chairs.

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