• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.193-196
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• 2002

This paper presents the improvement of the boron penetration and the reverse short channel effect (RSCE) in the 130nm W/WNx/Poly-Si dual gate PMOSFET for a high performance embedded DRAM. In order to suppress the boron penetration, we studied a range in the process heat budget. It has shown that the process heat budget reduction results in suppression of the boron penetration. To suppress the RSCE, we experimented with the halo (large tilt implantation of the same type of impurities as those in the device well) implant condition near the source/drain. It has shown that the low angle of the halo implant results in the suppression of the RSCE. The experiment was supported from two-dimensional(2-D) simulation, TSUPREM4 and MEDICI.

• Journal of the Korean Wood Science and Technology
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• v.31 no.3
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• pp.24-29
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• 2003

This research was performed to investigate the diffusivity of borate rods in radiata pine (Pinus radiata D. Don) conditioned to 40 percent moisture content (MC). The deepest penetration of boron were observed in the longitudinal direction, followed by the radial and the tangential directions. The boron loading on the wood face adjacent to the borate rod tended to increase with diffusion time in all directions. To mathematically quantify boron diffusion, the diffusion coefficient of boron was determined using Boltzmann's transformation by assuming that it was a function of concentration only. The values of the longitudinal diffusion coefficients were between 1.3×10^-8 cm²/sec and 9.2×10^-8 cm²/sec. The radial diffusion coefficients were between 1.4×10^-8 cm²/sec and 9.5×10^-8 cm²/sec, and the tangential diffusion coefficients were between 5.2×10^-9 cm²/sec and 1.3×10^-8 cm²/sec. The differences of diffusion coefficients between the longitudinal direction and the radial direction were slight, although their concentration profiles were markedly different. This indicates that the amount of boron loading on the wood face adjacent the borate rod is one of the most important factor for boron penetration in wood with low MC.

• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.109-111
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• 2007

In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.7 no.1
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• pp.3-10
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• 2021

For successful boron neutron caputre therapy, it is essential to develop a boron drug with a selective accumulation capacity for tumors. In particular, in order to apply boron neutron caputre therapy to brain tumors, drugs with good blood-brain barrier penetration are required. In this study, two low-molecular-weight boron compounds were introduced as brain tumor boron neutron caputre therapy drugs, and their physical and biological efficacy were evaluated. Among them, B2 showed good blood-brain barrier permeability and a high brain/blood ratio. From these results, it is expected that B2 can be used as a useful boron drug for boron neutron caputre therapy in brain tumors.

• Journal of the Korean Wood Science and Technology
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• v.48 no.4
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• pp.513-526
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• 2020

The existing preservation methods are difficult to be applied to a large dimension log which is needed for making traditional wooden ship 'Jalur' in Riau Province. Novel techniques to provide the use of readily available species to replace traditional species alternative were investigated. These included infusion and a combination of injection and bandage-wrapping methods for preserving living trees of Balam (Macaranga conifera (Rchb.f. & Zoll.) Müll.Arg.) and Bintangor (Calophyllum soulattri Burm.f.). Water-based boron compounds were applied as wood preservatives. In total, 18 discs from the bottom, middle, and top of four trees and two controls were used. Trees undergoing treatment were also used to see how wood anatomical structure might affect the boron penetration. The overall aim was to identify the best method for use in Jalur manufacturing. The results showed that in infused Balam tree where the hose position for the preservative intake was deep (10-15 cm from the bark), no boron compound was observed in the outer sapwood. Combination of injection and bandage-wrapping method gave higher percentage of boron penetration at bottom and middle of Balam tree. However, infused Bintangor showed 100% boron penetration. The larger vessel diameter, the absence of tyloses, and the simple perforation plates in Bintangor wood were likely to have contributed to the higher penetration of boron. The combination of bandage-wrapping and infusion, or alternatively by infusing the living trees close to the bark, and at as low as position in the stem gives better protection when treatments are applied to living trees.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.1
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• pp.89-94
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• 2015

This study was conducted to compare the laser weldability of boron steel and hot-stamped steel. In general, boron steel is used in the hot-stamping process. Hot-stamping is a method for simultaneously forming and cooling boron steel in a press die after heating it to the austenitizing temperature. Hot-stamped steel has a strength of 1500 MPa or more. Thus, in this study, the laser weldability of boron steel and thet of hot-stamped steel were investigated and compared. A continuous wave disk laser was used to produce butt and lap joints. In the butt welding, the critical cooling speed at which full penetration was obtained in the hot-stamped steel was lower than that of boron steel. In the lap welding, the joint widths were similar regardless of the welding speed when full penetration was obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.103-110
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• 2001

Gate oxide scaling for sub-l00nm CMOS devices has been studied. Issues on the gate oxide scaling are reviewed, which are boron penetration, reliability, and direct tunneling leakage currents. Reliability of Sub-2.0nm oxides and the device performance degradation due to boron penetration are investigated. Especially, the effect of gate leakage currents on the transistor characteristics is studied. As a result, it is proposed that thinner oxides than previous expectations may be usable as scaling proceeds. Based on the gate oxide thickness optimization process we have established, high performance CMOS transistors of $L_{gate}=70nm$ and $T_{ox}=1.4nm$ were fabricated, which showed excellent current drives of $860\mu\textrm{A}/\mu\textrm{m}$ (NMOS) and $350\mu\textrm{A}/\mu\textrm{m}$ (PMOS) at $I_{off}=10\mu\textrm{A}/\mu\textrm{m}$ and $V_dd=1.2V$, and CV/I of 1.60ps (NMOS) and 3.32ps(PMOS).

• Computers and Concrete
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• v.15 no.5
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• pp.833-845
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• 2015

In the world total boron reserve rating, Turkey is taken place on the first rank, meeting the demand of refined mineral and main boron chemicals. Development of the new boron products and production technologies, spreading the using area of the boron are the study topics which must be finically discussed. In this study, with the help of colemanite taken in ratio as (0%, 7.5%, 12.5%, and 17.5%) by being mixed by the cement, surfaces of the pumice aggregates have been covered. Permeability of the samples has been investigated by producing lightweight concrete with 400 dose with the help of aggregates covered with colemanite. For this, the experiments of water absorption, capillary water absorption, depth of penetration of water under pressure and rapid chloride permeability have been performed. In addition, analyses of the thin section of covered and uncovered pumice aggregates and SEM (Scanning Electron Microscope) have been investigated. When the control samples produced with the covered aggregates and concretes produced with colemanite covered aggregates are compared each other, it has been determined that special lightweight concretes whose values of capillary water absorption experiment, depth of penetration of water under pressure experiment and rapid chloride permeability are low can be produced.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.626-636
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• 2021

Boron-neutron capture therapy (BNCT) is a cancer treatment method that exploits the high neutron reactivity of boron. Monitoring the prompt gamma rays (PGs) produced during neutron irradiation is essential for ensuring the accuracy and safety of BNCT. We investigate the imaging of PGs produced by the boron-neutron capture reaction through Monte Carlo simulations of a gamma camera with a SrI₂ scintillator and parallel-hole collimator. GAGG scintillator is also used for a comparison. The simulations allow the shapes of the energy spectra, which exhibit a peak at 478 keV, to be determined along with the PG images from a boron-water phantom. It is found that increasing the size of the water phantom results in a greater number of image counts and lower contrast. Additionally, a higher septal penetration ratio results in poorer image quality, and a SrI₂ scintillator results in higher image contrast. Thus, we can simulate the BNCT process and obtain an energy spectrum with a reasonable shape, as well as suitable PG images. Both GAGG and SrI₂ crystals are suitable for PG imaging during BNCT. However, for higher imaging quality, SrI₂ and a collimator with a lower septal penetration ratio should be utilized.