• Journal of the Mineralogical Society of Korea
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• v.29 no.3
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• pp.155-165
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• 2016

Understanding the effect of boron content on atomic structures of boron-bearing multicomponent silicate melts is essential to reveal the atomistic origins of diverse geochemical processes involving silica-rich magmas, such as explosive volcanic eruption. The detailed atomic environments around B and Al in boron-bearing complex aluminosilicate glasses yield atomistic insights into reactivity of nuclear waste glasses in contact with aqueous solutions. We report experimental results on the effect of boron content on the atomic structures of sodium borate glasses and boron-bearing multicomponent silicate melts [malinkoite ($NaBSiO_4$)-nepheline ($NaAlSiO_4$) pseudo-binary glasses] using the high-resolution solid-state NMR ($^{11}B$ and $^{27}Al$). The $^{11}B$ MAS NMR spectra of sodium borate glasses show that three-coodrinated boron ($^{[3]}B$) increases with increasing $B_2O_3$ content. While the spectra imply that the fraction of non-ring species decreases with decreasing boron content, peak position of the species is expected to vary with Na content. Therefore, the quantitative estimation of the fractions of the ring/non-ring species remains to be explored. The $^{11}B$ MAS NMR spectra of the glasses in the malinkoite-nepheline join show that four-coordinated boron ($^{[4]}B$) increases as $X_{Ma}$ [$=NaBSiO_4/(NaBSiO_4+NaAlSiO_4)$] increases while $^{[3]}B$ decreases. $^{27}Al$ MAS NMR spectra of the multicomponent glasses confirm that four-coordinated aluminum ($^{[4]}Al$) is dominant. It is also observed that a drastic decrease in the peak widths (full-width at half-maximum, FWHM) of $^{[4]}Al$ with an addition of boron ($X_{Ma}=0.25$) in nepheline glasses. This indicates a decrease in structural and topological disorder around $^{[4]}Al$ in the glasses with increasing boron content. The quantitative atomic environments around boron of both binary and multicomponent glasses were estimated from the simulation results of $^{11}B$ MAS NMR spectra, revealing complex-nonlinear variation of boron topology with varying composition. The current results can be potentially used to account for the structural origins of the change in macroscopic properties of boron-bearing oxide melts with varying boron content.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.50-57
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• 2006

Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.714-719
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• 1998

저용융점을 가진 새로운 무기접착제인 단사정 HBO2가 알루미나 분말의 선택적 레이저 소결을 하기 위한 접착제로서 개발되었다. 12$0^{\circ}C$로 유지된 진공오븐 안에서 Boron Oxide 분말을 탄수시키면 단사정 HBO2가 만들어진다. 이것을 이용하여 만들어진 green body는 현재까지 알루미나 분말의 선택적 레이저 소결을 위하여 개발된 다른 무기 접착제들인 알루미늄(AI)과 Ammonium Phosphate(NH4H2PO4)을 이용하여 제조된 것에 비교하여 훨씬 높은 굽힘 강도를 가지고 있고 또 정밀도가 우수하였다. Green body를 열처리하여서 얻은 세라믹 시편도 똑같은 결과를 보여주었다. 이 이유는 단사정 HBO2가 낮은 점도를 보여주고 알루미나 분말에 대하여 좋은 젖음성을 가지고 있기 때문에 가능한 것으로 사료되어진다. 접착제로서 Boron Oxide의 양, 레이저 에너지밀도 등이 SLS에 의하여 제조되어진 복합재료의 굽힘강도에 미치는 영향이 조사되었다.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Journal of the Korean Chemical Society
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• v.27 no.1
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• pp.73-75
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• 1983

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.6
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• pp.72-80
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• 2015

Recently air breathing propulsion system is much interested in relatively comparing to the conventional chemical propulsion, and the R&D of this area is performed much more including the basic research of the solid ramjet in our country. The boron is applied to the solid fuel because of its high heating value, but it has a complicated combustion characteristics. therefore many researches have been studied in this area. In this paper the combustion characteristics of the boron have been investigated through the published papers for the purpose of the ramjet fuel application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.6-14
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• 2012

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.220-224
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• 2002

The oxide scales formed on $Ni_3Al$-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B after oxidation at 900, 1000 and 110$0^{\circ}C$ in air were studied using XRD, SEM, EPMA and TEM. The oxide scales consisted primarily of $NiO,\; NiAl_2O_4,\;{\alpha}-Al_2O_3,\; monoclinic-ZrO_2,\; and \;tetragonal-ZrO_2$. The outer layer of the oxide scale was rich in Ni-oxides, whereas the internal oxide stringers were rich in Al-oxides and $ZrO_2$. Within the above oxide scales, Cr and Mo tended to exist as dissolved ions.