• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.220-224
• /
• 2002

The oxide scales formed on $Ni_3Al$-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B after oxidation at 900, 1000 and 110$0^{\circ}C$ in air were studied using XRD, SEM, EPMA and TEM. The oxide scales consisted primarily of $NiO,\; NiAl_2O_4,\;{\alpha}-Al_2O_3,\; monoclinic-ZrO_2,\; and \;tetragonal-ZrO_2$. The outer layer of the oxide scale was rich in Ni-oxides, whereas the internal oxide stringers were rich in Al-oxides and $ZrO_2$. Within the above oxide scales, Cr and Mo tended to exist as dissolved ions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2004.02a
• /
• pp.161-161
• /
• 2004

• Transactions of the Korean Society of Pressure Vessels and Piping
• /
• v.20 no.1
• /
• pp.49-55
• /
• 2024

Stainless 630 (or 17-4PH) is a precipitation-hardening martensitic stainless steel that has excellent mechanical properties and corrosion resistance. These characteristics make the STS630 to be used as a consisting material for various components such as spider, pin, spring, and spring retainer, of the control rod drive mechanism (CRDM) in pressurized water reactors (PWRs). In general, it is well known that the oxide layer of stainless steel consists of a duplex layer, a compact inner layer of FeCr₂O₄ spinel, and a coarse-grained outer layer of Fe₃O₄ spinel in PWR primary coolant condition. However, the characteristics of the oxide layer can be sensitively influenced by various water chemistry conditions such as temperature, dissolved oxygen, dissolved hydrogen, pH, pH adjuster type, and exposure time. In this work, we investigate the corrosion properties of the STS630 as a function of coolant temperature in an NH3 alkaline solution for its boron-free application in a small modular reactor, to confirm the feasibility for usage as a boron-free SMR structural material. As a result, oxide layer of corroded STS630 is consist of double-layer oxides consisting of a Cr-rich dense inner oxide and a Fe-rich polyhedral outer particles like as that in commercial PWR primary coolant. The corrosion rate of STS630 increases with increase in test time and temperature and the corrosion rate-time model equation was developed based on experimental data. Overall, it is expected that the results in this study provides useful data for the corrosion behavior of STS630 in alkaline environments, contributing to the development of selecting suitable materials for SMRs.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.20 no.2
• /
• pp.1-6
• /
• 1983

The reduction of threshold voltage and punchthrough voltage of short channel MOS transistors has been measured experimentally with silicon gate NMOS transistors. The effects of the gate oxide thickness and substrate doping concentration on the threshold voltage and punch-through voltage have also been measured with sample devices with boron implantation and gate oxide thickness of 50 nm and 70 nm. Hot electron emission has been measured by floating gate method for the samples with 3 ${\mu}{\textrm}{m}$ channel length. It has been concluded from this measurement that hot electron emission is not significant for the channel length of 3${\mu}{\textrm}{m}$.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.2
• /
• pp.97-105
• /
• 1985

Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.569-574
• /
• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.1
• /
• pp.44-50
• /
• 2013

E-glass fiber is the most widely used glass fiber for reinforced composite materials of aircrafts, automobiles and leisure equipments. But recently researches are being progressed to reduce boric oxide from 8 % to 0 (zero), as is called 'Boron free E-glass', because of increasing material cost, environmental problem, and improving chemical resistance and mechanical properties of E-glass fiber. In this study, we fabricated the bulk glass and fiber glass of 'Boron free E-glass (BF) compositions', and characterized thermal properties and optical properties. 'Boron free E-glass (BF)' was obtained by the melting of mixed batch materials at $1550^{\circ}C$ for 2 hrs with different $Al_2O_3$ compositions 5~10 %. We obtained transparent clear glass with high visible light transmittance value of 81~86 %, and low thermal expansion coefficient of $4.2{\sim}4.9{\times}10^{-6}/^{\circ}C$ and softening point of $907{\sim}928^{\circ}C$. For the chemical resistance test of 'BF' fiber samples, we identified that the higher alumina contents gives the better corrosion resistance of glass fiber.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.107-107
• /
• 2003

원자층 증착(ALD, Atomic Layer Deposition)기술은 기판 표면에서의 self-limiting reaction을 통해 매우 얇은 박막을 형성할 수 있고, 두께 및 조성 제어를 정확히 할 수 있으며, 복잡한 형상의 기판에서도 100%에 가까운 step coverage를 얻을 수 있어 초미세패턴의 형성과 매우 얇은 두께에서 균일한 물리적, 전기적 특성이 요구되는 초미세 반도체 공정에 적합하다. 특히 반도체의 logic 및 memory 소자의 gate 공정에서 절연막과 보호막으로, 그리고 배선공정에서는 층간절연막(ILD, Inter Layer Dielectric)으로 사용하는 silicon oxide 박막에 적용될 경우, LPCVD 방법에 비해 낮은 온도에서 증착이 가능해 boron과 같은 dopant들의 확산을 최소화하여 transistor 특성 향상이 가능하며, PECVD 방법에 비해 전기적·물리적 특성이 월등히 우수하고 대면적 uniformity 증가가 기대된다. 본 연구에서는 자체적으로 설계 및 제작한 장비를 이용하여 silicon oxide 박막을 ALD 방법으로 증착하고 그 특성을 살펴보았다. 먼저, cycle 수에 따른 증착 박막 두께의 linearity를 통해서 원자층 증착(ALD)임을 확인할 수 있었으며, reactant exposure(L)와 증착 온도에 따른 deposition rate 변화를 알아보았다 Elipsometer를 이용해 증착된 silicon oxide 박막의 두께 및 굴절률과 그 uniformity를 관찰하였고, AES 및 XPS 분석 장비로 박막의 조성비와 불순물 성분을 살펴보았으며, 증착 박막의 치밀성 평가를 위해 HF etchant로 wet etch rate를 측정하여 물리적 특성을 정리하였다. 특히, 기존의 박막 증착 방법인 LPCVD와 PECVD에 의한 silicon oxide박막의 물성과 비교, 평가해 보았다. 나아가 적절한 촉매 물질을 선정하여 원자층 증착(ALD) 공정에 적용하여 그 효과도 살펴보았다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.10
• /
• pp.814-820
• /
• 1991

TaSi$_2$ was formed by rapid thermal annealing(RTA) on BF$_2$ doped single crystalline silicon substrates. The formation and various properties of TaSi$_2$ have been investigated by using 4-point probe, HP414, XRD, and SEM. And the redistribution of boron with RTA has been observed by SIMS. Implanted boron was diffused out into the TaSi$_2$ for RTA temperature but did not significantly affect the formation temperature of TaSi$_2$. Also, the contact resistance for TaSi$_2$/p$^{+}$ region had a low value 22$\Omega$, at contact size of 0.9$\mu$m, and the native oxide formed on Si-substrates by BF$_2$ implantation retarded the formation of TaSi$_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.307-308
• /
• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.