• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• ETRI Journal
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• v.37 no.2
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• pp.387-394
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• 2015

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.

• The Journal of the Convergence on Culture Technology
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• v.4 no.3
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• pp.209-212
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• 2018

Anisotropic conductive film(ACF) bonding is widely used for making fine interconnections between two different materials where soldering is not easily applicable. There are three constraints for the successful implementation of ACF bonding. A bonding contact should be pressed by a hot head with the right pressure and temperature for a pre-defined curing time. In this paper, a method for ACF bonding based on machine vision system is proposed and verified through some experiments. The system calculates the position and orientation of printed circuit boards(PCBs) on a bonding table and estimates the optimal hitting point where the hot head should be applied. Experimental results show that the proposed system achieves better adhesive strength by providing head flatness over contact surfaces.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.652-655
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• 2006

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.30-32
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• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.225-228
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• 2003

This paper is concerned with pressure welding, which has been known as a main bonding mechanism for the cold and warm clad forming. Bonding characteristics of pressure welding between the copper and aluminum plates are experimentally investigated. Experiments are performed at the cold and warm temperature range with the variation of important factors such as magnitude of pressure, surface roughness of Cu and Al plates, and pressure holding time. It could be concluded that the bonding criterion might be given as a function of bonding pressure and surface roughness for the cold and warm temperature ranges.

• Laser Solutions
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• v.11 no.3
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• pp.1-4
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• 2008

A selective laser micro bonding process using liquid glass (methylsilsesquioxane) was developed and the results are analysed. The liquid glass can be solidified with Nd:YAG laser irradiation and it can be applied for joining two glass substrates. A bonding thickness of a few micrometers can be achieved. The appropriate laser power density (or this process is around 40-60 $kW/cm^2$ and its bonding force is 1000-1200 $gf/mm^2$. This process can be applied for bonding micro devices such as micro bio-sensors or display products. Its advantages and limitations are presented and discussed.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.27-31
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• 2005

This article contains the development of FPC bonder that used for repair or trial product. Nowadays, in FPO module process (including PDP) accept the thermo-compress bonding method when attach FPC(Flexible Printed Circuit Board), TCP(Tape Carrier Package) and COF(Chip on the FPC) by ACF(Anisotropic Conductive Film). This system consists of ACF attachment part, pre-bonding part, main bonding part, loading / unloading part. This composition is a stand-alone system, not an in-line system. Hereafter, this composition should be developing into in-line system in all area of FPD industry.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.5-9
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• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.