• 대한금속재료학회지
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• 제49권5호
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• pp.380-387
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• 2011

Wire brushing, which is a typical surface preparation method for roll bonding, has recently been highlighted as a potentially effective method for surface nanocrystallization. In the present study, the microstructure evolution and hardness of the wire-brushed surface and roll-bonded interface of a 1050 aluminum sheet were investigated. Wire brushing formed protruded layers with a nanocrystalline structure and extremely high surface hardness. After roll bonding, the protruded layers remained as hard layers at the interface. Due to their hardness and brittleness the interface hard layers, can affect the interface bonding properties and also play an important role determining the mechanical properties of multi-layered clad sheets.

• 소음진동
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• 제8권6호
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• pp.1093-1102
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• 1998

The success of controllability of smart structures depends on the quality of the bonding along the interface between the main structure and the attached sensing and acuating elements. Generally, the analysis procedures neglect the effect of the interfacial bond layer or assume that this bond layer behaves like viscoelastic material. Three different bond layers. two modified epoxy adhesives, and one isocyanate adhesive were prepared for their toughness and moduli. Bond layer of the chosen adhesive provides an almost perfect bonding condition between the composite structure and the PZT while bended significantly like arrow-shape. The perfect bonding condition is tested by considering various material properties of the bond layers. and based on this perfect bonding condition, the effects of the interfacial bond layer on the dynamic behavior and controllability of the test structure is experimentally studied. Once the perfect bonding condition is achieved. dynamic effects of the bond layer itself on the dynamic characteristics of the main structure is negligible. but the contribution of the attached PZT elements on the stiffness of the multi-layered structure becomes significant when the thickness of the bond layer increased.

• Current Photovoltaic Research
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• 제3권1호
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• pp.1-4
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• 2015

In this study, we analyzed the correlation between mechanical and electrical properties of low-temperature conductive film (LT-CF) bonded silicon solar cells by a quadrant analysis (horizontal axis (peeling strength), vertical axis (power loss)). We found that a series of points with various bonding parameters such as bonding temperature, pressure and time were distributed in the different three regimes; weak regime (Q2: weak bonding strength and high power loss), moderate regime (Q4 : strong bonding strength and low power loss) and hard regime (Q3 : weak bonding strength and low power loss). Using this analogous technique, it was possible to fabricate the LT-CF bonded silicon solar cells with the various conditions displayed in Q3 of the quadrant plots, possessing the peeling strength of ~ 1N/mm and power loss of 2~3%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.672-675
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• 1999

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

• 한국정밀공학회지
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• 제16권3호통권96호
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• pp.78-83
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• 1999

The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.55-62
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• 2023

본 연구에서는 서로 다른 Pore per inch (PPI, 1 inch 당 pore의 수)를 갖는 Ni-foam 사이에 Sn-3.0Ag-0.5Cu(wt.%, SAC305) 솔더 침지 공정을 수행하여 Ni-foam/SAC305 복합 솔더를 제조한 후, 이를 천이액상 확산 접합(Transient liquid Phase bonding, TLP bonding) 공정에 적용하여 형성된 접합부의 미세구조 분석 및 기계적 특성 평가가 수행되었다. 제조된 Ni-foam/SAC305 복합 솔더 프리폼 (Solder preform)은 Ni-foam 및 SAC305로 구성되었으며, Ni-foam 계면에는 (Ni,Cu)₃Sn₄ 조성의 금속간 화합물이 형성되었다. TLP 접합 공정 수행 시, Ni-foam 계면의 금속간 화합물은 (Ni,Cu)₃Sn₄+Au로 변환 되었으며, 접합 시간이 증가할수록 Ni-foam과 SAC305가 지속적으로 반응하면서 접합부는 금속간 화합물로 변환되었다. 130 PPI Ni-foam/SAC305 복합 솔더 접합부가 가장 빠른 속도로 금속간 화합물로 변화되는 것을 확인하였다. 기계적 특성에 미치는 Ni-foam의 영향을 확인하기 위해 전단 시험 수행 결과, TLP 접합 초기에 모든 조건의 솔더 접합부는 50 MPa 이상의 우수한 기계적 특성을 나타내었으며, 접합 시간이 증가할수록 전단 강도는 증가하는 경향을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.

• Journal of Welding and Joining
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• 제31권6호
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1999년도 특별강연 및 추계학술발표대회 개요집
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• pp.247-250
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• 1999

• 한국안전학회지
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• 제32권1호
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.