• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.106-109
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• 2006

In this paper, the design and characteristics of a novel ultrasonic motor are investigated. Such a motor is appropriate far use in the optical zoom or auto focusing functions of the lens system in mobile phones. Its design and simulation of performances are carried out by FEM commercial software (ATILA). The shape of the motor is similar to a square without one side, on which an optical lens can be mounted. Two sheets of piezoelectric ceramics are adhered to both sides of two legs of the elastic body, respectively To drive the ultrasonic motor, the voltage is applied to two sheets of piezoelectric ceramics bonded to one leg. The rotation direction can be easily changed by switching the piezoelectric sheets bonded to the other leg, to which voltage is applied. A proto type of the motor is fabricated and its outer size is $10^*10^*2[mm3]$ including the camera lens of which the diameter is 7.5(mm). Its power consumption is about 0.3[W] and the speed of rotation is adjustable from 10 to 200[rpm] according to the applied voltage

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Journal of Korean Association for Spatial Structures
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• v.12 no.3
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• pp.79-87
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• 2012

In this study, static displacement sensors using lead switches are bonded on concrete beams and RC beams, and monitoring systems to crack damages are studied using radio frequency. If load is received on the center of flexible specimens, bonded static displacement sensors will be destroyed, and these become to send signals of damages at radio frequency system connected with static displacement sensors. Study of these functional building elements will be protected from external factors by unusual weather, earthquake, etc, in RC buildings and structures.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.5
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• pp.459-464
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• 2013

Structures can be evaluated their health status by allowable loading criteria. These criteria can be determined by the maximum strain. Therefore, in order to detect this maximum strain of structures, fiber optic Bragg grating(FBG) sensor probes are newly designed and fabricated to perform the memorizing detection even if the sensor system is on-and-off. The probe is constructed with an FBG optical fiber embedded in silver epoxy. When the load is applied and removed on the structure, the residual strain remains in the silver epoxy to memorize the maximum strain effect. In this study, a commercial Al-foil bonded FBG sensor probe was tested to investigate the detection feasibility at first. FBG sensor probes with silver epoxy were fabricated as three different sizes. The detection feasibility of maximum strain was studied by doing the tensile tests of CFRP specimens bonded with these FBG sensor probes. It was investigated the sensitivity coefficient defined as the maximum strain divided by the residual strain. The highest sensitivity was 0.078 of the thin probe having the thickness of 2 mm.

• Journal of the Korean Chemical Society
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• v.56 no.4
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• pp.416-423
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• 2012

Using time domain reflectometry, the complex dielectric spectra between 10 MHz to 20 GHz has been measured in the whole composition range at 10, 20, 30 and $40^{\circ}C$ for the binary mixtures of ethylene glycol and dimethyl sulfoxide. For all the mixtures, only one dielectric loss peak was observed in this frequency range. The relaxation in these mixtures can be described by a single relaxation time using the Debye model. A systematic variation is observed in dielectric constant (${\varepsilon}_0$) and relaxation time (${\tau}$). The excess permittivity (${\varepsilon}^E$), excess inverse relaxation time $(1/{\tau})^E$, Kirkwood correlation factor (g) and thermodynamic parameters viz. enthalpy of activation (${\Delta}H$) and Gibbs free energy of activation (${\Delta}G$) have been determined, to confirm the formation of hydrogen bonded homogeneous and heterogeneous cooperative domains, the dynamics of solute - solute interaction and the hindrance to molecular rotation in the hydrogen bonded glass forming ethylene glycol - dimethyl sulphoxide system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.129-132
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• 2004

This paper describes the design, fabrication and characteristics of a piezoelectric valve using MCA(Multilayer ceramic actuator). The MCA valve, which has the buckling effect, consists of three separate structures; MCA, a valve actuator die and an a seat die. The design of the actuator die was done by FEM modeling and displacement measurement, respectively. The valve seat die with 6 trenches was made, and the actuator die, which is driven to MCA under optimized conditions, was also fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the seat/actuator die structure. PDMS sealing pad was fabricated to minimize a leak-rate. It was also bonded to seat die and SUS package. The MCA valve shows a flow rate of 9.13 sccm at a supplied voltage of 100 V with a 50 % duty cycle, maximum non-linearity was 2.24 % FS and leak rate was $3.03{\times}10^{-8}\;pa{\cdot}m^3/cm^2$. Therefore, the fabricated MCA valve is suitable for a variety of flow control equipment, a medical bio-system, automobile and air transportation industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.515-520
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• 2004

We report on the development of a Piezoelectric valvc that is designed to have a high reliability for fluid control systems, such as mass flow control, transportation and chemical analysis. The valve was fabricated using a MCA(multilayer ceramic actuator), which has a low consumption power, high resolution and accurate control. The fabricated valve is composed of MCA, a valve actuator die and an seat die. The design of the actuator dic was done by FEM(finite element method) modeling, respectively. And, the valve seat die with 6 trenches was made. and the actuator die, which possible to optimize control to MCA, was fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the scat/actuator die structure. PDMS(poly dimethylsiloxane) sealing pad was fabricated to minimize a leak-rate. It was also bonded to scat die and stainless steel package. The flow rate was 9.13 sccm at a supplied voltage of 100 V with a 50 % duty ratio and non-linearity was 2.24 % FS. From these results, the fabricated MCA valve is suitable for a variety of flow control equipments, a medical bio-system, semiconductor fabrication process, automobile and air transportation industry with low cost, batch recess and mass production.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.6
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• pp.594-598
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• 2015

The effects of Ni on the mechanical properties of WC-Xwt.%Ni-1.5wt.%Si-1.1wt.%$B_4C$ composite (X = 21.6, 23.6, 25.6 and 27.6 wt.%) were investigated in order to replace Co with Ni as the binder metal for hard materials based on WC-Co system. Using X-ray diffraction, optical microscopy, field-emission scanning electron microscopy results, the microstructure, pore distribution and grain size of the composites sintered at $1,150^{\circ}C$ were examined with different fraction (X = 21.6, 23.6, 25.6 and 27.6 wt.%) of binder metal Ni. The average WC grain size of the $WC-Ni-Si-B_4C$ composites was about $1{\mu}m$. The Rockwell hardness : A (HRA) and transverse rupture strength were about 88HRA and $110kgf/mm^2$, respectively. The obtained sample was bonded with SM45C at a temperature of $1,050^{\circ}C$. The thickness and mechanical properties of the bonded area were investigated with different dwell time at a bonding temperature of $1,050^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.