• Molecules and Cells
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• v.40 no.11
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• pp.828-836
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• 2017

Eukaryotic cells consist of a complex network of thousands of proteins present in different organelles where organelle-specific cellular processes occur. Identification of the subcellular localization of a protein is important for understanding its potential biochemical functions. In the post-genomic era, localization of unknown proteins is achieved using multiple tools including a fluorescent-tagged protein approach. Several fluorescent-tagged protein organelle markers have been introduced into dicot plants, but its use is still limited in monocot plants. Here, we generated a set of multicolored organelle markers (fluorescent-tagged proteins) based on well-established targeting sequences. We used a series of pGWBs binary vectors to ameliorate localization and co-localization experiments using monocot plants. We constructed different fluorescent-tagged markers to visualize rice cell organelles, i.e., nucleus, plastids, mitochondria, peroxisomes, golgi body, endoplasmic reticulum, plasma membrane, and tonoplast, with four different fluorescent proteins (FPs) (G3GFP, mRFP, YFP, and CFP). Visualization of FP-tagged markers in their respective compartments has been reported for dicot and monocot plants. The comparative localization of the nucleus marker with a nucleus localizing sequence, and the similar, characteristic morphology of mCherry-tagged Arabidopsis organelle markers and our generated organelle markers in onion cells, provide further evidence for the correct subcellular localization of the Oryza sativa (rice) organelle marker. The set of eight different rice organelle markers with four different FPs provides a valuable resource for determining the subcellular localization of newly identified proteins, conducting co-localization assays, and generating stable transgenic localization in monocot plants.

• Journal of Ginseng Research
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• v.34 no.2
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• pp.113-121
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• 2010

The fresh ginseng roots were extracted with aqueous methanol, and the obtained extracts were partitioned using ethyl acetate, n-butanol, and water, successively. The repeated silica gel and octadecyl silica gel column chromatogaraphy for n-butanol fraction afforded four diol ginseng saponins, ginsenosides $Rb_1$, $Rb_2$, $R_c$, and Rd. The physicochemical, spectroscopic, and chromatographic characteristics of these ginsenosides were measured and compared with those reported in the literature. Some of the peak assignments in previously published $^1H$- and $^{13}C$-nuclear magnetic resonance (NMR) spectra were inaccurate. This study employed two-dimensional NMR experiments, including $^1H-^1H$ correlation spectroscopy, heteronuclear single quantum correlation, and heteronuclear multiple bond connectivity, to determine exact peak assignments.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2006.11a
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• pp.285-289
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• 2006

In screening of algicidal bacteria, we isolated a marine bacterium which had potent algicidal effects on harmful algal bloom (HAB) species. This organism was identified as a strain very close to Bacillus subtilisby 16S rRNA gene sequencing. This bacterium, Bacillus sp. SY-1, produces very active algicidal compounds against the harmful dinoflagellate Cochlodinium polykrikoides. We isolated three algicidal compounds (MS 1056, 1070, 1084) and identified them by amino acid analyses, fast atom bombardment mass spectrometry (FAB-MS), infrared spectroscopy (IR), $^1H$, $^{13}C$, and extensive two-dimensional nuclear magnetic resonance (2D NMR) techniques including $^1H-^{15}N$ HMBC analysis. One of them, MS 1056, contains a b-amino acid residue with an alkyl side chain of $C_{15}$. MS 1056, 1070, and 1084 showed algicidal activities against C. polykrikoides with an $LC_{50}$ (6 hrs) of 2.3, 0.8, $0.6\;{\mu}g/ml$, respectively. These compounds also showed significant algicidal activities against other harmful dinoflagellates and raphidophytes. In contrast, MS 1084 showed no significant growth inhibition against various organisms coexisting with HAB species in natural environments, including bacteria, eukaryotic microalgae, and cyanobacteria, although it inhibited growth of some fungi and yeasts. These observations imply that algicidal bacterium Bacillus sp. SY-1 and its algicidal compounds could play an important role in regulating the onset and development of HABs in the natural environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.451-455
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• 2012

To compare an electrical and optical characteristics of indium tin oxide (ITO) and carbon nanotube (CNT) electrode on flexible and reflective display, we fabricate two charged particle-type display panels under the same panel condition of which the width of ribs is 10 ${\mu}m$, the cell size is $300{\mu}m{\times}300{\mu}m$, the q/m value of the white particles is -4.3 ${\mu}C/g$ and that for the black is +1.3 ${\mu}C/g$, and the cell gap is 75 ${\mu}m$, 125 ${\mu}m$, and 175 ${\mu}m$. We use plastic substrates coated with ITO and CNT electrode. To evaluate optical property, we measure a response time of particles using a laser and a photodiode. Threshold and driving voltages of CNT electrode according to the sheet resistance of 300, 600, 1,000 (ohm/sq) are compared with ITO electrode of 10 (ohm/sq). A response time of the CNT panel is similar to that of ITO panel, but the threshold and driving voltages of CNT panel are higher than that of ITO panel, inducing a large bombardment of the particles and shortening the lifetime of the panel. High difference of a threshold and a driving voltage of CNT panel will induce an particle clumping, resulting degradation of the panel. A bending radius of the fabricated CNT panel is 18 ${\mu}m$.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.41-46
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• 2018

Experiments were carried out the phenomenal observation on effect of corona treated hotmelt laminating film in process of manufacture by 2 kinds of rolling speed and electric power variatons. Surface treatment by corona which is exposure of film surface to electron of ion bombardment, rather than mere exposure to active species, like atomic oxygen or ozone, can enhance adhesion by removing contaminant, electret, roughening surface, and introducing reactive chemical group. Reactive neutrals, ions, electron and photons generated during the corona treatment interact simultaneously with polymers to alter surface chemical composition, wettability, and thus film adhesion. However, it is highly recommended that extensive chains scission is avoided because it can lead to side-effect by forming sticky matter, resulting in dropouts. This paper reviews principles of surface preparation of polypropylene substrate by corona discharging. In addition, the experimental section provides a description of parameter optimization on corona discharging treatment and its side-effect. Experimental results are discussed in terms of surface wetting as determined by contact angle and SEM measurements. When the rolling speed of the film decreased from 1.666 [m / sec] to 0.083 [m / sec], contact angle decreased from $80[^{\circ}]$ to $64[^{\circ}]$, and the wettability was greatly improved. As the supply power increased from 0.4 [kVA] to 2 [kVA] at the corona discharge surface treatment, the contact angle decreased from $77[^{\circ}]$ to $65[^{\circ}]$, and the wettability was greatly improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.2-218.2
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• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.449-453
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/Cl$_2$ and CF$_4$/Cl$_2$ inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Ar/Cl$_2$ gas mixing ratio of 2/8, a RF power of 800 W, a DE bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl$_2$ plasma. In CF$_4$/Cl$_2$ plasma, yttrium are remained on the etched surface of YMnO$_3$ and formed of nonvolatile YF$_{x}$ compounds manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower value than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of YMnO$_3$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.s.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.132-132
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• 1998

Ion bombardment in the keV range is known to induce drastic chemical modifications in organic and inoranic molecular comppounds. A degrading effects in orgainc materials such as the release of ppolymer compponents and the chemistry of the iradiation pprocess have been observed. The work to be described was carried out in order to understand the irradiation effect better. The sampple(ppolyimide : Kappton ) Were irradiated by Ar+, Ne+, H+ ions and electrons (3 keV) to fluence ranging from ~1$\times$1015 to ~1$\times$1017 ions/$cm^2$ at room tempperature. The impplant was usually rastered over an area of a few $cm^2$ . These ion impplantation were carried out in an electron sppectrometer ESCA 5700 (ppHI Ltd) at a residual gas ppressure of ~5$\times$10-10 Torr. X-ray pphotoelectron sppectroscoppy(XppS) measurements were made using a monochromatized Al Kａ(1486.6 eV) excitation source. The pphotoemitted electrons were detected by hemisppherical analyser with a ppass energy of 23.5 eV. Core-level binding energies were referenced to the Fermi level. To avoid the charging effect it was used the neutralizer. We studied the irradiation effects on ppolyimide with Ar+, Ne+, He+ ions and electrons by XppS which 추 pprovide detailed information concerning the bonding-induced changes.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.31-36
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• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.133-138
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• 2009

Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.