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http://dx.doi.org/10.12656/jksht.2011.24.1.031

Characterization of Hydrogen Gas Sensitivity of TiO2 Thin Films with Electron Beam Irradiation  

Heo, S.B. (School of Materials Science and Engineering, University of Ulsan)
Lee, H.M. (School of Materials Science and Engineering, University of Ulsan)
Jung, C.W. (School of Materials Science and Engineering, University of Ulsan)
Kim, S.K. (School of Materials Science and Engineering, University of Ulsan)
Lee, Y.J. (Ulsan Fine Chemical Industry Center, Materials Analytical Team)
Kim, Y.S. (R&D Division, New Optics LTD.)
You, Y.Z. (School of Materials Science and Engineering, University of Ulsan)
Kim, D. (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.24, no.1, 2011 , pp. 31-36 More about this Journal
Abstract
$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.
Keywords
$TiO_2$; ZnO; sputtering; electron beam irradiation; gas sensor;
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