• 한국결정성장학회지
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• 제5권4호
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• pp.351-357
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• 1995

$CF_4$ 플라즈마 분위기에서 반응성 이온식각된 알루미늄의 표면을 XPS 분석하였다. 알루미늄의 표면에$AlF_3$가 형성되었으며 표면에서의 깊이가 깊어질수록 Al - F 결합에 의한 $Al_{2p}$ peak 강도가 감소하고 금속 알루미늄 결합에 의한 $Al_{2p}$ peak 강도가 증가하였다. 입자의 충돌에 의해서 표면원자들이 mixing 됨으로써 알루미늄의 표면에 50~100 $\AA$ 정도의 두께를 가진 $AlF_x$ 층이 형성되는 것으로 분석되었다. 같은 조건에서 반응성 이온식각된 알루미늄 산화막의 경우에는 mixing 효과가 알루미늄보다 작으므로 상대적으로 얕은 범위(10~20 $\AA$)에서 F가 O를 치환하여 $AlF_x$층이 형성되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.126-129
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• 2006

AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.390-393
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• 1989

Diamond is synthesized from the gaseous mixture of carbon monoxide and hydrogen by microwave PECVD. $10{\times}10mm^2$ silicon wafers are used as the substrate,and it can be raised more than $900^{\circ}C$ by microwave absorption, radiation by plasma and bombardment of ions. The changes of the morphology and the growth rates of the deposits with the experimental conditions are examined by Scanning Electron Microscopy. The d values of all the deposited films concide with those of powder diffraction data in XRD. In Raman spectra, the peak of the deposit coincides with that of the natural diamond which has a value of 1332.5 $cm^{-1}$, and the broad peak from 1360 $cm^{-1}$to 1600 $cm^{-1}$which represents the amorphous graphite was observed in the higher concentration of carbon monoxide.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.316-323
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• 1995

A vital step in magnetic tape manufacturing is the surface modification of polymer substrate prior to ink application. A critical element for good adhesion of magnetic ink on polymeric substrate is the ability to join ink in cost-effective manner. Corona discharging is one of the effective methods of modifying polymer surface to improve adhesion while maintaining the desirable properties of the film itself. Surface treatment by corona which is exposure of film surface to electron or ion bombardment, rather than mere exposure to active species, like atomic oxygen or ozone, can enhance adhesion by removing contaminant, electret, roughening surface, and/or introducing reactive chemical groups. Reactive neutrals, ions, electron and photons generated during the corona treatment interact simultaneously with polymers to alter surface chemical composition, wettability, and thus film adhesion. However, it is highly recommended that extensive chains scission be avoided because it can lead to side-effect by forming sticky matter, resulting in dropouts. This paper reviews principles of surface preparation of polymer substrate by corona discharging. In addition, the experimental section provides a description of parameter optimization on corona discharging treatment and its side-effect. Experimental results are discussed in terms of surface wetting as determined by contact angle measurements.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.785-790
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• 1999

This research has been carried out to develop a low-energy large-aperture pulsed electron beam generator (LELA), 200keV 1A, for industrial applications. One of the most important feature of this electron beam generator is large electron beam cross section of $190cm^2$. Low energy electron beam generators have been used for water cleaning, flue gas cleaning, and pasteurization, etc. In these applications the cross sectionof the e-beam is related to reaction efficiency. Another important feature of this LELA EB generator is easy maintenance because of its simple structure and relatively low vacuum operation compared to the conventional EB generators. The conventional EB generators need to be scanned because the small cross section thermal electron emitters are used in the conventional EB generators which have small EB cross section. In this research, we use the secondary electrons generated by ion bombardment on the HV cathode surface as a electron source. Therefore we can make any shape of EB cross section without scanning.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.404-408
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• 1999

Gallium doped zinc oxide(GZO) films were deposited on soda-lime glass substrates without substrate heating $(T_s<50^{\circ}C$) by dc planar magnetron sputtering using GZO ceramic oxide targe with different inert gas (Ar, or Ne). For the GZO films deposited under different total gas pressure $(P_{tot})$, structural and electrical properties were investigated by XRD and Hall effect measurements. Crystallinity of GZO films deposited using Ar was degraded with increase in $(P_{tot})$, suggesting that it was heavily affected by kinetic energy of sputtered Zn particles$(PA_{zn})$ arriving at substrate surface. Whereas, crystallinity of GZO films deposited at lower Ptot than 3.0 Pa using Ne gas was degraded with decrease in $(P_{tot})$. This degradation was considered to be result of film damage caused by the bombardment of high-energy neutrals ($Ne^{\circ}$). On the basis of a hard sphere collision processes, the average final energy of particles (sputtered Zn, $Ar^{\circ}$and $Ne^{\circ}$)arriving at substrate surface were estimated.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.21-26
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• 2003

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.