• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.511-519
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• 2016

This paper proposes a CMOS 6-bit phase shifter with low RMS phase and amplitude errors for an X-band phased array antenna. The phase shifter combines a switched-path topology for coarse phase states and a switch-filter topology for fine phase states. The coarse phase shifter is composed of phase shifting elements, single-pole double-throw (SPDT), and double-pole double-throw (DPDT) switches. The fine phase shifter uses a switched LC filter. The phase coverage is $354.35^{\circ}$ with an LSB of $5.625^{\circ}$. The RMS phase error is < $6^{\circ}$ and the RMS amplitude error is < 0.45 dB at 8-12 GHz. The measured insertion loss is < 15 dB, and the return losses for input and output are > 13 dB at 8-12 GHz. The input P1dB of the phase shifter achieves > 11 dBm at 8-12 GHz. The current consumption is zero with a 1.2-V supply voltage. The chip size is $1.46{\times}0.83mm^2$, including pads.

• Journal of electromagnetic engineering and science
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• v.6 no.1
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• pp.30-35
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• 2006

This paper describes fully integrated low phase noise MMIC voltage controlled oscillators(VCOs). The Asymmetrical Inductance Tank VCO(AIT-VCO), which optimize the shortcoming of the previous tank's inductance optimization approach, has lower phase noise performance due to achieving higher equivalent parallel resistance and Q value of the tank. This VCO features an output power signal in the range of - 11.53 dBm and a tuning range of 261 MHz or 15.2 % of its operating frequency. This VCO exhibits a phase noise of - 117.3 dBc/Hz at a frequency offset of 100 kHz from carrier. A phase noise reduction of 15 dB was achieved relative to only one spiral inductor. The AIT-VCO achieved low very low figure of merit of -184.6 dBc/Hz. The die area, including buffers and bond pads, is $0.9{\times}0.9mm^2$.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1485-1490
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• 2014

We have designed and developed a new ladder type tetrafused ${\pi}$-conjugated building block such as dihydroindolo[3,2-b]indole (DINI) and investigated its role as an electron rich unit. The photovoltaic properties of a new semiconducting ${\pi}$-conjugated polymer, poly[[5,10-bisoctyl-5,10-dihydroindolo[3,2-b]indole-[5,6- bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole]], represented by PDINI-OBTC8 are described. The new polymer PDINI-OBTC8 was synthesized in donor-acceptor (D-A) fashion, where fused ${\pi}$-conjugated tetracyclic DINI, and 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl) benzo[c][1,2,5]thiadiazole (OBTC8) were employed as electron rich (donor) and electron deficient (acceptor) moieties, respectively. The conventional bulk heterojunction (BHJ) device structure ITO/PEDOT:PSS/PDINI-OBTC8:PCB71M/LiF/Al was utilized to fabricate polymer solar cells (PSCs), which comprises the blend of PDINI-OBTC8 and [6,6]-phenyl-$C_{71}$-butyric acid methyl ester ($PC_{71}BM$) in BHJ network. A BHJ PSC that contain PDINI-OBTC8 delivered power conversion efficiency (PCE) value of 1.68% with 1 vol% of 1,8-diidooctane (DIO) under the illumination of A.M 1.5G 100 $mW/cm^2$.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2245-2250
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• 2014

A new accepter unit, 6,7-difluoro-2,3-dihexylquinoxaline, was prepared and utilized for the synthesis of the conjugated polymers containing electron donor-acceptor pair for OPVs. New series of copolymers with dioctyloxybenzodithiophene as the electron rich unit and 6,7-difluoro-2,3-dihexylquinoxaline as the electron deficient unit are synthesized. The solid films of poly[2,6-(4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene)-alt-5,8-(6,7-difluoro-2,3-dihexylquinoxaline)] (PBQxF) and poly[2,6-(4,8-bis(2-ethylhexyloxy) benzo[1,2-b:4,5-b']dithiophene)-alt-5,8-(6,7-difluoro-2,3-dihexyl-5,8-di(thiophen-2-yl) quinoxaline)] (PBDTQxF) show absorption bands with maximum peaks at about 599 and 551 nm and the absorption onsets at 692 and 713 nm, corresponding to band gaps of 1.79 and 1.74 eV, respectively. The devices comprising PBQxF with $PC_{71}BM$ (1:2) showed open-circuit voltage ($V_{OC}$) of 0.64 V, short-circuit current density ($J_{SC}$) of $1.58mA/cm^2$, and fill factor (FF) of 0.39, giving power conversion efficiency (PCE) of 0.39%. To obtain absorption in the longer wavelength region, thiophene units without any alkyl group are incorporated as one of the monomers in PBDTQxF, which may result in low solubility of the polymers to lead lower efficiency.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.569-574
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• 2014

Inverted bulk hetero-junction polymer solar cells (iPSC) composed of P3HT/PC61BM blends on the ZnO modified with benzoic acid derivatives-based self-assembled monolayers (SAM) are fabricated. Compared with the device using the pristine ZnO, the devices with ZnO surface modified SAMs derived from benzoic acid such as 4-(diphenylamino)benzoic acid (DPA-BA) and 4-(9H-carbazol-9-yl)benzoic acid (Cz-BA) as an electron transporting layer show improved the performances. It is mainly attributed to the favorable interface dipole at the interface between ZnO and the active layer, the eective passivation of the ZnO surface traps, decrease of the work function and facilitating transport of electron from PCBM to ITO electrode. The power conversion eciency (PCE) of iPSCs based on DPA-BA and Cz-BA treated ZnO reaches 2.78 and 2.88%, respectively, while the PCE of the device based on untreated ZnO is 2.49%. The open circuit voltage values ($V_{oc}$) of the devices with bare ZnO and SAM treated ZnO are not much different. Whereas, higher the fill factor (FF) and lower the series resistance ($R_s$) are obtained in the devices with SAMs modification.

• The Journal of Pediatrics of Korean Medicine
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• v.35 no.2
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• pp.11-20
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• 2021

Objectives The purpose of the study is to evaluate the safety of the Allium Fistulosum extract in children and its effectiveness in height growth. Methods This study is randomized, double-blind, placebo-controlled trial. The participants are children between the 3rd and 25th percentiles in height, and between the ages of 5 and 12 years. They are randomly assigned to treatment group or control group. The treatment group will take 5 g (1 g as Allium Fistulosum extract) for 24 weeks, 1 time a day. The control group will take the 5 g (0 g as Allium Fistulosum extract) of placebo for 24 weeks, 1 time a day. The primary outcome is change in height, and the secondary outcomes are growth rate, height standard deviations, Insulin-like growth factor-1 (IGF-1), Insulin-like growth factor binding protein-3 (IGFBP-3), IGF1-1/IGFBP-3 ratio, growth hormone, bone age, osteocalcin, and Z-score for growth. Results This protocol has been approved by the institutional review board (IRB) of Daejeon Korean Medicine Hospital of Daejeon University (IRB No. DJDSKH-20-BM-15), and registered in the Clinical Research Information Service (CRIS) (Registry No. KCT0005981). Conclusions This study will provide clinical information about the effectiveness and safety of Allium Fistulosum extract in children for their growth.

• Journal of Advanced Navigation Technology
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• v.26 no.6
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• pp.487-495
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• 2022

This paper describes the design and development of a high-power transmit receive module(TRM) for mounting on X-band synthetic aperture radar(SAR) of the NEXTSat-2. The TRM generates a high-power pulse signal with a bandwidth of 100 MHz in the target frequency range of X-band and amplifies a low-noise on the received signal. Tx. path of the TRM has output signal level of more than 200 watts (53.01 dB), pulse droop of 0.35 dB, signal strength change of 0.04 dB during transmission signal output, and phase change of 1.7 ˚. Rx. path has noise figure of 3.99 dB and gain of 37.38 ~ 37.46 dB. It was confirmed the TRM satisfies all requirements. The TRM mounted on the NEXTSat-2 flight model(FM) which will be launched using the KSLV-II (Nuri).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.7 s.337
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• pp.35-40
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• 2005

This paper proposes a fractional-N phase-locked loop (PLL) frequency synthesizer using the 3rd order ${\Delta}{\sum}$ modulator for 900MHz medium speed wireless link. The LC voltage-controlled oscillator (VCO) is used for the good phase noise property. To reduce the lock-in time, a charge pump has been developed to control the pumping current according to the frequency steps and the reference frequency is increased up to 3MHz. A 36/37 fractional-N divider is used to increase the reference frequency of the phase frequency detector (PFD) and to reduce the minimum frequency step simultaneously. A 3rd order ${\Delta}{\sum}$ modulator has been developed to reduce the fractional spur VCO, Divider by 8 Prescaler, PFD and Charge pump have been developed with 0.25um CMOS, and the fractional-N divider and the third order ${\Delta}{\sum}$ modulator have been designed with the VHDL code, and they are implemented through the FPGA board of the Xilinx Spartan2E. The measured results show that the output power of the PLL is about -lldBm and the phase noise is -77.75dBc/Hz at 100kHz offset frequency. The minimum frequency step and the maximum lock-in time are 10kHz and around 800us for the maximum frequency change of 10MHz, respectively.