• 제목/요약/키워드: bismuth titanate

검색결과 44건 처리시간 0.024초

[100]-Texturing of Barium Titanate Ceramics Using Sodium Bismuth Titanate Templates: Challenges and Insights

  • Nu-Ri Ko;Temesgen Tadeyos Zate;Wook Jo
    • 한국전기전자재료학회논문지
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    • 제37권3호
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    • pp.328-331
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    • 2024
  • This research explores the development of [100]-textured barium titanate (BaTiO3, BT) ceramics using sodium bismuth titanate (Na0.5Bi4.5Ti4O15, NBiT) templates, aimed at leveraging the inherent high dielectric property of BT. However, the attempted texturing was unsuccessful, primarily due to bismuth diffusion from the NBiT templates into the BT matrix below the sintering temperature, at 1,000℃. Systematical exploration about the cause of the failure is involved and alternative approaches are proposed in detail to overcome the challenge. These findings contribute to the understanding of techniques and conditions for textured ceramic fabrication and highlight the need for further research in this area.

SIMS 분석조건이 Bismuth Titanate 박막의 깊이방향 조성 해석에 미치는 영향 (Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film)

  • 김재남;이상업;권혁대;신광수;전웅;박병옥;조상희
    • 분석과학
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    • 제14권6호
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    • pp.486-493
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    • 2001
  • 본 연구는 SIMS를 이용한 bismuth titanate 박막의 깊이방향 분석에 있어서 mesh grid를 사용한 경우와 사용하지 않은 경우, offset voltage를 사용한 경우와 사용하지 않은 경우 등 분석조건에 따른 charging effect 그리고 검출한계의 특성을 검토하고자 하였다. 결과에 따르면 -40 V의 offset voltage를 사용하였을 경우는 charging effect의 감소는 물론 검출한계도 낮출 수 있었으나 mesh grid를 사용하였을 경우에는 charging effect는 다소 줄일 수 있었으나 반면 검출 한계는 오히려 높아졌다. O- 일차이온을 적용한 경우는 -40 V의 offset voltage를 사용하였을 때와 동일한 효과를 얻을 수 있었다.

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Liquid Delivery MOCVD로 증착된 강유전체 BDT 박막의 피로 특성 향상 (Improvement of Fatigue Properties in Ferroelectric Dy-Doped Bismuth Titanate(BDT) Thin Films Deposited by Liquid Delivery MOCVD System)

  • 강동균;박윈태;김병호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.171-171
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    • 2007
  • Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

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Direct Determination of Cationic Disordering in Sodium Bismuth Titanate

  • Choi, Si-Young;Ikuhara, Yuichi
    • Applied Microscopy
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    • 제42권3호
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    • pp.164-173
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    • 2012
  • The relaxor ferroelectric feature in lead-free perovskite oxides, where the dipoles are randomly oriented and they can be feasibly aligned parallel to the external bias, is attracting lots of attention in the field of piezoelectric materials science, since it is one of candidates to replace the toxic lead-based materials that are still being commercially used. However, the origin of relaxor characteristic and its related atomic structure are still ambiguous. In this study, $Na_{1/2}Bi_{1/2}TiO_3$, chosen as a model relaxor system, was found to exhibit a cationic-disordered atomic structure; and furthermore the nonpolar atomic structure and its related oxygen tilting were ascertained via annular bright field imaging skill. We also found that this cationic disordering gives rise to the local formation of atomic vacancies.

Fabrication of barium titanate-bismuth ferrite fibers using electrospinning

  • Baji, Avinash;Abtahi, Mojtaba
    • Advances in nano research
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    • 제1권4호
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    • pp.183-192
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    • 2013
  • One-dimensional multiferroic nanostructured composites have drawn increasing interest as they show tremendous potential for multifunctional devices and applications. Herein, we report the synthesis, structural and dielectric characterization of barium titanate ($BaTiO_3$)-bismuth ferrite ($BiFeO_3$) composite fibers that were obtained using a novel sol-gel based electrospinning technique. The microstructure of the fibers was investigated using scanning electron microscopy and transmission electron microscopy. The fibers had an average diameter of 120 nm and were composed of nanoparticles. X-ray diffraction (XRD) study of the composite fibers demonstrated that the fibers are composed of perovskite cubic $BaTiO_3$-$BiFeO_3$ crystallites. The magnetic hysteresis loops of the resultant fibers demonstrated that the fibers were ferromagnetic with magnetic coercivity of 1500 Oe and saturation magnetization of 1.55 emu/g at room temperature (300 K). Additionally, the dielectric response of the composite fibers was characterized as a function of frequency. Their dielectric permittivity was found to be 140 and their dielectric loss was low in the frequency range from 1000 Hz to $10^7$ Hz.

The ferroelectric and fatigue properties in Gd-modified bismuth titanate (BGT) thin films deposited by liquid delivery MOCVD

  • Kang Dong-Kyun;Park Won-Tae;Kim Byong-Ho
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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    • pp.190-193
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    • 2006
  • Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

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MOCVD $Bi_4Ti_3O_{12}$ 박막의 실리콘 위에서의 증착기구 및 유기 금속원료의 펄스주입법에 의한 박막 특성 개선 (Deposition mechanism of $Bi_4Ti_3O_{12}$ films on Si by MOCVD and property improvement by pulse injection method)

  • 이석규;김준형;최두현;황민욱;엄명윤;김윤해;김진용;김형준
    • 한국진공학회지
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    • 제9권4호
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    • pp.373-378
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    • 2000
  • 실리콘 기판 위에서 $TiO_2$$Bi_2O_3$의 박막 성장은 반응속도론 측면에서 커다란 차이를 보였지만, $Bi_4Ti_3O_{12}$(BIT) 박막의 성장은 주로 $TiO_2$ 성장 거동에 의해 지배를 받았다. 그 결과 BIT 박막은 bismuth가 부족한 조성을 가지게 되었다. 박막 내에 부족한 bismuth의 양을 보충해줌으로써 이러한 문제점을 해결하고자 펄스 주입 유기 금속 화학 기상 증착(MOCVD) 방법을 사용하였다. 이러한 펄스 주입법에 의해 bismuth의 양은 증가하였고 또한, 박막의 깊이 방향으로의 조성이 균일해졌고 $Bi_4Ti_3O_{12}$과 Si사이의 계면이 향상되었다. 게다가, $Bi_4Ti_3O_{12}$ 박막의 결정성은 크게 향상되었고 누설 전류 밀도는 연속 주입법에 비해 1/2에서 1/3정도 낮아졌다. 시계 방향의 C-V 이력 곡선이 관찰되었고 이로 인해 펄스 주입법에 의해 증착된 $Bi_4Ti_3O_{12}$ 박막은 강유전성에 의해 스위칭이 됨을 알 수 있었다.

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The effect of nano-sized starting materials and excess amount of Bi on the dielectric/piezoelectric properties of 0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] lead free piezoelectric ceramics

  • Khansur, Neamul Hayet;Ur, Soon-Chul;Yoon, Man-Soon
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.31.1-31.1
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    • 2009
  • In an approach to acclimate ourselves torecent ecological consciousness trend, a lead-free piezoelectric material, bismuth sodium titanate (abbreviated as BNT) based bismuth sodium barium titanate (abbreviated as BNT-BT), was considered as an environment-friendly alternative for a lead based piezoelectric system. Ceramic specimens of0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] (x = 0.500~0.515) compositions were prepared by a modified mixed oxide method. To increase the chemical homogeneity andre action activity, high energy mechanical milling machine and pre-milled nanosized powder has been used. In this method (BixNa0.5)TiO3 (x=0.500~0.515) andBaTiO3 were prepared separately from pre-milled constituent materials at low calcination temperature and then separately prepared BNTX (X=1, 2, 3 and 4) and BT were mixed by high energy mechanical milling machine. Without further calcination step the mixed powders were pressed into disk shape and sintered at $1110^{\circ}C$. Microstructures, phase structures and electrical properties of the ceramic specimens were systematically investigated. Highly dense ceramic specimens with homogenous grains were prepared in spite of relatively low sintering temperature. Phase structures were not significantly influenced by the excess amount Bi. Large variation on the piezoelectric and dielectric properties was detected at relative high excess Bi amounts. When $x{\leq}0.505$, the specimens exhibit insignificant variation in piezoelectric and dielectric constant though depolarization temperature is found to be decreased. Considerable amount of decrease in piezoelectric and dielectric properties are observed with higher excess of Bi amounts ($x{\geq}0.505$). This research indicates the advantages of high energy mechanical milling and importance of proper maintenance of Bi stoichiometry.

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