• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국진공학회지
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• 제20권2호
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• pp.77-85
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• 2011

실리콘(Si)에 비해 상대적으로 밴드 갭이 작고, 열전도도가 낮으며, 기존의 Si 반도체 공정 기술과 호환이 가능한 실리콘-게르마늄(SiGe) 합금은 트랜지스터, 광수신 소자, 태양전지, 열전 소자 등 다양한 전자 소자에서 사용되고 있다. 본 논문에서는 SiGe 합금이 전자소자에 응용되는 원리 및 응용과 관련된 기술적인 논제들을 고찰한다. Si에 비해 밴드 갭이 작은 게르마늄(Ge)이 그 구성 원소인 SiGe 합금의 밴드 갭은 Si과 Ge의 분률과 상관없이 항상 Si의 밴드 갭 보다 작다. 이러한 SiGe의 작은 밴드 갭은 전류 이득의 손실 없이 베이스 두께를 감소시키는 것을 가능하게 하여 바이폴라 트랜지스터의 동작속도를 향상시킨다. 또한, Si이 흡수하지 못하는 장파장 대의 빛을 SiGe이 흡수하여 광전류를 생성하게 함으로써 태양전지의 변환효율을 증가시킨다. 질량이 서로 다른 Si 및 Ge 원소의 불규칙적인 분포에 의해 발생하는 포논 산란 효과 때문에 SiGe 합금은 순수한 Si 및 Ge과 비교할 때 낮은 열전도도를 갖는다. 낮은 열전도도 특성의 SiGe 합금은 전자 소자 구조 내에서의 열 손실을 억제하는데 효과가 있으므로 Si 반도체 공정 기반의 열전 소자의 구성 물질로서 활용이 기대된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.269-274
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• 2004

Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

• Journal of Electrical Engineering and Technology
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• 제7권4호
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• pp.601-605
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• 2012

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.464-466
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• 1996

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirements and high current density capability. When designing circuit and systems that utilize IGSTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 추계학술대회 논문집
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• pp.286-290
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• 2001

This paper presents a full-digital low-level controller for a robotic material transfer system which has been developed for a computer-integrated manufacturing model plant. Compared to conventional analog or hybrid type controllers in current industrial environments, this controller system has some advantages such as strong noise-immunity, easy control algorithm implementation, etc The servo-controller consists of two modules, a position controller and a DC servo motor driver. The position controller operates position feedback routines by receiving position encoder data and sending control outputs to the driver. The position controller is implemented in a full-digital way using a recently introduced microcontroller. The DC servomotor driver controls speeds and torques. The driver consists of a micro-controller and insulated-gate-bipolar-transistors (IGBT). The micro-controller provides control signals, and the IGBT's amplifies the control signals and sends them to the motor.

• 전자공학회논문지D
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• 제35D권1호
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• pp.34-40
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• 1998

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.