• Journal of the Korean institute of surface engineering
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• v.38 no.6
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• pp.234-240
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• 2005

In this study, ion nitriding of a EHA pump part made of AISI 4340 steel was performed under different applied power conditions to study the relationship between dimensional changes of specimens and the type of applied power source. Microstructures and micohardness distribution at different processing conditions were also examined. Duplex surface treatment of ion nitriding with the optimum process conditions to produce the minimum dimensional variation in a EHA pump part and a TiN thin film coating by unbalanced magnetron sputtering was performed and the specimens with a duplex surface treatment were subjected to a high speed wear test to evaluate the wear performance of EHA hydraulic pump parts with various surface treatment conditions. Results indicated that uniform and continuous surface layer with a minimum dimensional variation could be obtained by ion nitriding with bipolar mode power source and much enhanced wear characteristics with a duplex surface treatment could be obtained, compared with results from ion nitriding or single-layerd TiN coating specimens.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.20-20
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• 2000

Back-propagation neural network (BPNN) is the most prevalently used paradigm in modeling semiconductor manufacturing processes, which as a neuron activation function typically employs a bipolar or unipolar sigmoid function in either hidden and output layers. In this study, applicability of another linear function as a neuron activation function is investigated. The linear function was operated in combination with other sigmoid functions. Comparison revealed that a particular combination, the bipolar sigmoid function in hidden layer and the linear function in output layer, is found to be the best combination that yields the highest prediction accuracy. For BPNN with this combination, predictive performance once again optimized by incrementally adjusting the gradients respective to each function. A total of 121 combinations of gradients were examined and out of them one optimal set was determined. Predictive performance of the corresponding model were compared to non-optimized, revealing that optimized models are more accurate over non-optimized counterparts by an improvement of more than 30%. This demonstrates that the proposed gradient-optimized teaming for BPNN with a linear function in output layer is an effective means to construct plasma models. The plasma modeled is a hemispherical inductively coupled plasma, which was characterized by a 24 full factorial design. To validate models, another eight experiments were conducted. process variables that were varied in the design include source polver, pressure, position of chuck holder and chroline flow rate. Plasma attributes measured using Langmuir probe are electron density, electron temperature, and plasma potential.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.10
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• pp.824-831
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• 2013

The delta driven GMSK is a modulation scheme to generate the gaussian pulse by the bipolar delta signal and to modulate the phase function with the differential gaussian pulse between $+T_b/2$ and $-T_b/2$. The demodulation of delta driven GMSK differs from conventional GMSK schemes. This paper proposed a demodulation with the differential phase detector at the end of each bit interval. A designed detector then finds the one of the possible region by hard decision, in which the phase difference lies. Finally the binary data can be recovered by state transition process. Through the BER simulation for AWGN channel, it was found that the proposed demodulation effected by the run length of binary data. The simulated BER degradation of about 2[dB] was analyzed, as compared to the theoretical coherent demodulation with $BT_b$=0.3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.24-28
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• 2010

A simulation study of a current-mode direct current (DC)-DC buck converter is presented in this paper. The converter, with a fully integrated power module, is implemented by using sense method metal-oxide-semiconductor field-effect transistor (MOSFET) and bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. When the MOSFET is used in a current sensor, the sensed inductor current with an internal ramp signal can be used for feedback control. In addition, the BiCMOS technology is applied in the converter for an accurate current sensing and a low power consumption. The DC-DC converter is designed using the standard $0.35\;{\mu}m$ CMOS process. An off-chip LC filter is designed with an inductance of 1 mH and a capacitance of 12.5 nF. The simulation results show that the error between the sensing signal and the inductor current can be controlled to be within 3%. The characteristics of the error amplification and output ripple are much improved, as compared to converters using conventional CMOS circuits.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.51-56
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• 2021

Using an inkjet printing process, we have investigated a droplet formation of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) near the orifice of a piezoelectric inkjet head. With an attempt to form the smallest droplet without any satellites, we have applied various waveforms such as the unipolar, bipolar, and M-shaped waveforms. It is found that the droplet velocity and volume vary depending sensitively on the waveform width and voltage. Of those, the M-shaped waveform is shown to provide the smallest droplet volume, followed by the bipolar and then unipolar waveforms. The droplet printed on a PET film roll by the M-shaped waveform has the diameter as small as 46.1 ㎛. It is likely that the second short unipolar in the M-shape waveform increases the droplet velocity gradient, rendering the droplet smaller.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Transactions of Materials Processing
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• v.18 no.7
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• pp.531-537
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• 2009

The effect of blank holding force on thickness variation in simultaneous sheet forming with rectangular shape and circular has been demonstrated. Because has investigated an effect on formability of magnesium sheet, in this paper, the effect of punch radius on formability have been thinning, various crack phenomena and forming velocity. By simultaneously forming process with circular and rectangular shape, the data of simultaneously forming process with circular and rectangular shape will used to a part development such as notebook computer case, cell phone and bipolar plate of fuel cell.