• Title/Summary/Keyword: bipolar model

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SiGe Heterojunction Bipolar Transistor의 등가모델 파라미터 추출 (Equivalent Model Parameter Extraction of SiGe Heterojunction Bipolar Transistor)

  • 이성현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.49-52
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    • 2002
  • A new method is developed to extract model parameters of SiGe HBT equivalent circuit including the base impedance and base-collector junction capacitance. Using this method, all resistances and capacitances of SiGe HBT are independently determined from measured S-parameters using two-port parameter formula. This method is proposed to reduce possible errors generated from global optimization process, and its accuracy has been verified by finding good agreements between measured and modeled current / power gain up to 18 GHz.

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Two-fluid model of the tangential plasmapause

  • Seough, Jung-Joon;Kim, Khan-Hyuk;Yoon, Peter H.;Lee, Dong-Hun
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 2010년도 한국우주과학회보 제19권1호
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    • pp.41.1-41.1
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    • 2010
  • A bipolar magnetic field perturbation in the meridional plane was observed when the Polar spacecraft crossed the plasmapause near the midnight, which was identified by a clear jump in density and temperature, from the plasmasheet to the plasmasphere. The bipolar variation shows a negative-then-positive polarity. To examine the bipolar magnetic field perturbation at the plasmapause, we assume one-dimensional model with physical quantities varying along a direction normal to the plasmapause and employ two-fluid approach for the tangential plasmapause. That is, the magnetic fields on both sides are parallel. Considering Ampere's law and pressure balance relation, we have a perturbed magnetic field, which is consistent with the observation at the plasmapause.

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PEMFC 시스템용 바이폴라 플레이트의 디자인에 관한 연구 (A Study on a Design of Bipolar Plate for PEMFC System)

  • 윤형상;차인수;이정일;윤정필
    • 신재생에너지
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    • 제4권1호
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    • pp.5-10
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    • 2008
  • Hydrogen fuel cell is clean and efficient technology along with high energy densities. While there are many different types of fuel cells, the proton exchange membrane fuel cell stands out as one of the most promising for transportation and small stationary applications. This paper focuses on design of bipolar plate for proton exchange membrane fuel cell. The bipolar plate model is realistically and accurately simulated velocity distribution, current density distribution and its effect on the PEMFC system using CFD tool FLUENT.

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고분자 전해질 연료전지용 바이폴라 플레이트의 디자인에 관한 고찰 (A Study on the design of bipolar plate for proton exchange membrane fuel cell)

  • 윤정필;최장균;차인수;임중열
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 추계학술대회 논문집
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    • pp.39-42
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    • 2007
  • Hydrogen fuel cell is clean and efficient technology along with high energy densities. While there are many different types of fuel cells, the proton exchange membrane fuel cell stands out as one of the most promising for transportation and small stationary applications. This paper focuses on design of bipolar plate for proton exchange membrane fuel cell. The bipolar plate model is realistically and accurately simulated velocity distribution, current density distribution and its effect on the PEMFC system using CFD tool FLUENT.

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Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories

  • Kim, Young Su;Min, Kyeong-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.539-545
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    • 2013
  • In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of $TiO_2$ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.

IGBT의 SPICE 파라미터 추출 (SPICE Parameter Extraction for the IGBT)

  • 김한수;조영호;최성동;최연익;한민구
    • 대한전기학회논문지
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    • 제43권4호
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    • pp.607-612
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    • 1994
  • The static and dynamic model of IGBT for the SPICE simulation has been successfully developed. The various circuit model parameters are extracted from the I-V and C-V characteristics of IGBT and implemented into our model. The static model of IGBT consists of the MOSFET, bipolar transistor and series resistance. The parameters to be extracted are the threshold voltage of MOSFET, current gain $\beta$ of bipolar transistor, and the series resistance. They can be extracted from the measured I-V characteristics curve. The C-V characteristics between the terminals are very important parameters to determine the turn-on and turn-off waveform. Especially, voltage dependent capacitance are polynomially approximated to obtain the exact turn-on and turn-off waveforms. The SPICE simulation results employing new model agree well with the experimental values.

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A novel radiation-dependence model of InP HBTs including gamma radiation effects

  • Jincan Zhang;Haiyi Cai;Na Li;Liwen Zhang;Min Liu;Shi Yang
    • Nuclear Engineering and Technology
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    • 제55권11호
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    • pp.4238-4245
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    • 2023
  • In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.

A Predictive Model to identify possible affected Bipolar disorder students using Naive Baye's, Random Forest and SVM machine learning techniques of data mining and Building a Sequential Deep Learning Model using Keras

  • Peerbasha, S.;Surputheen, M. Mohamed
    • International Journal of Computer Science & Network Security
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    • 제21권5호
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    • pp.267-274
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    • 2021
  • Medical care practices include gathering a wide range of student data that are with manic episodes and depression which would assist the specialist with diagnosing a health condition of the students correctly. In this way, the instructors of the specific students will also identify those students and take care of them well. The data which we collected from the students could be straightforward indications seen by them. The artificial intelligence has been utilized with Naive Baye's classification, Random forest classification algorithm, SVM algorithm to characterize the datasets which we gathered to check whether the student is influenced by Bipolar illness or not. Performance analysis of the disease data for the algorithms used is calculated and compared. Also, a sequential deep learning model is builded using Keras. The consequences of the simulations show the efficacy of the grouping techniques on a dataset, just as the nature and complexity of the dataset utilized.

전력용 IGBT의 미시적인 모델링에 의한 소자특성 및 전압형 인버터 시뮬레이션 (Device Characteristic and Voltage-Type Inverter Simulation by Power IGBT Micro Modeling)

  • 서영수;백동현;조문택;이상훈;허종명
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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    • pp.63-66
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    • 1996
  • An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

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Numerical Modeling of Charge Transport in Polymer Materials Under DC Continuous Electrical Stress

  • Hamed, Boukhari;Fatiha, Rogti
    • Transactions on Electrical and Electronic Materials
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    • 제16권3호
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    • pp.107-111
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    • 2015
  • Our work is based on the development of a numerical model to develop a methodology for predicting the aging and breakdown in insulation due to the dynamics of space charge packets. The model of bipolar charge transports is proposed to simulate space charge dynamic for high DC voltage in law-density polyethylene (LDPE), taking into account the trapping and detrapping of recombination phenomena, this model has been developed and experimentally validation. Theoretical formulation of the physical problem is based on the Poisson, the continuity and the transport equations as well as on the appropriate models for injection. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges, conduction and displacement current densities, and the external current.