• Title/Summary/Keyword: bilayer sensor

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A Hybrid Bilayer Pressure Sensor based on Silver Nanowire (은 나노와이어 기반 하이브리드 이중층 압력 센서)

  • Lee, Jin-Young;Shin, Dong-Kyun;Kim, Ki-Eun;Seo, Yu-Seok;Park, Jong-Woon
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.3
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    • pp.31-35
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    • 2017
  • We have fabricated flexible and stretchable pressure sensors using silver nanowires (AgNWs) and analyzed their electric responses. AgNWs are spray coated directly onto uncured polydimethylsiloxane (PDMS) such that AgNWs penetrate into the uncured PDMS, enhancing the adhesion properties of AgNWs. However, the single-layered AgNW sensor exhibits unstable electric response and low pressure sensitivity. To tackle it, we have coated a conductive polymer, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) onto the AgNW layer. Such a hybrid bilayer sensor ensures a stable electric response because the over-coating layer of PEDOT:PSS effectively suppresses the protrusion of AgNWs from PDMS during release. To enhance the sensitivity further, we have also fabricated a stacked bilayer AgNW sensor. However, its electric response varies depending sensitively on the initial overlap pressure.

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Planar Hall Resistance Sensor for Monitoring Current

  • Kim, KunWoo;Torati, Sri Ramulu;Reddy, Venu;Yoon, SeokSoo
    • Journal of Magnetics
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    • v.19 no.2
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    • pp.151-154
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    • 2014
  • Recent years have seen an increasing range of planar Hall resistive (PHR) sensor applications in the field of magnetic sensing. This study describes a new application of the PHR sensor to monitor a current. Initially, thermal drift experiments of the PHR sensor are performed, to determine the accuracy of the PHR signal output. The results of the thermal drift experiments show that there is no considerable drift in the signals attained from 0.1, 0.5, 1 and 2 mA current. Consequently, the PHR sensor provides adequate accuracy of the signal output, to perform the current monitoring experiments. The performances of the PHR sensor with bilayer and trilayer structures are then tested. The minimum detectable currents of the PHR sensor using bilayer and trilayer structures are $0.51{\mu}A$ and 54 nA, respectively. Therefore, the PHR sensor having trilayer structure is the better choice to detect ultra low current of few tens nanoampere.

Fabrication of Superconducting Transition Edge Sensors based on Ti/Au Bilayer Formation (Ti/Au 이중층을 이용한 초전도 상전이 센서 제작)

  • Lee, Young-Hwa;Kim, Yong-Hamb
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.943-949
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    • 2008
  • We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

Unified solutions for piezoelectric bilayer cantilevers and solution modifications

  • Wang, Xianfeng;Shi, Zhifei
    • Smart Structures and Systems
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    • v.16 no.5
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    • pp.759-780
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    • 2015
  • Based on the theory of piezoelasticity, the static performance of a piezoelectric bilayer cantilever fully covered with electrodes on the upper and lower surfaces is studied. Three models are considered, i.e., the sensor model, the driving displacement model and the blocking force model. By establishing suitable boundary conditions and proposing an appropriate Airy stress function, the exact solutions for piezoelectric bilayer cantilevers are obtained, and the effect of ambient thermal excitation is taken into account. Since the layer thicknesses and material parameters are distinguished in different layers, this paper gives unified solutions for composite piezoelectric bilayer cantilevers including piezoelectric bimorph and piezoelectric heterogeneous bimorph, etc. For some special cases, the simplifications of the present results are compared with other solutions given by other researches based on one-dimensional constitutive equations, and some amendments have been found. The present investigation shows: (1) for a PZT-4 piezoelectric bimorph, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are about 19.59%, 23.72% and 7.21%, respectively; (2) for a PZT-4-Al piezoelectric heterogeneous bimorph with constant layer thicknesses, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are 9.85%, 11.78% and 4.07%, respectively, and the amendments of the electrode charges induced by an end shear force or an end moment are both 1.04%; (3) for a PZT-4-Al piezoelectric heterogeneous bimorph with different layer thicknesses, the maximum amendment of tip deflection approaches 23.72%, and the maximum amendment of electrode charge approaches 31.09%. The present solutions can be used to optimize bilayer devices, and the Airy stress function can be used to study other piezoelectric cantilevers including multi-layered piezoelectric cantilevers under corresponding loads.

A properties and the fabrication of ZnO-Si system CO gas sensor with low power consumption (절전형 ZnO-Si계 CO 가스 센서 제작과 그 특성)

  • Yi, S.H.;Hung, H.K.;Kim, J.K.;Chang, B.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.324-326
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    • 1997
  • Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

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Development of Superconducting Transition Edge Sensors for Gamma Ray Detection (감마선 검출을 위한 초전도 상전이 센서)

  • Lee, Young-Hwa;Kim, Yong-Hamb
    • Progress in Superconductivity
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    • v.9 no.2
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    • pp.162-166
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    • 2008
  • We are developing a sensitive gamma ray spectrometer based on superconducting transition edge sensors. The detector consists of a small piece of high purity Sn as an absorber and a Ti/Au bilayer as a temperature sensor. It is designed to measure the thermal signal caused by absorption of gamma rays. The mechanical support and the thermal contact between the absorber and the thermometer were made with Stycast epoxy. The bilayer was formed by e-beam evaporation and patterned by wet etching on top of a $SiN_X$ membrane. A sharp superconducting transition of the film was measured near 100 mK. When the film was biased to the edge of the transition, signals were observed due to single photon absorption emitted from an $^{241}Am$ source. The measured spectrum showed several characteristic peaks of the source including 59.5 keV gamma line. The full with at half maximum was about 900 eV for the 59.5 keV gamma line. The background was low enough to resolve low energy lines. Considerations to improve the energy resolution of the gamma ray spectrometer are also discussed.

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Recent Research Trend in Oxide Semiconductor Gas Sensors for Indoor Air Quality Monitoring (산화물 반도체를 이용한 실내 공기질 가스 센서 연구동향)

  • Lee, Kun Ho;Lee, Jong-Heun
    • Prospectives of Industrial Chemistry
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    • v.23 no.3
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    • pp.32-41
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    • 2020
  • 사람들은 대부분의 시간을 실내에서 보내고 있으며, 실내에 존재하는 유해가스는 미량의 농도에도 불구하고 심각한 질환을 일으킬 수 있다. 금속산화물 반도체 가스센서는 감도가 우수하고, 구조가 간단하며, 초소형화가 가능한 장점이 있어 고가의 대형 장비를 사용하지 않고 실내 유해가스를 측정하는 데 효과적으로 이용될 수 있다. 본 기고문에서는 금속산화물 반도체를 이용한 가스 센서의 검지 원리를 고찰하고, 나노 구조 조절, 마이크로 리액터 및 이중층 구조를 이용한 가스 개질 등 실내 유해가스 측정을 위한 다양한 센서 설계방법을 소개하고자 한다.

Wheastone-bridge type MR sensors of Si(001)/NiO(300 $\AA$)/NiFe bilayer system (Si(001)/NiO(300$\AA$)/NiFe계 휘스톤 브리지형 자기저항소자)

  • 이원재;민복기;송재성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1050-1053
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    • 2001
  • There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

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