• Communications for Statistical Applications and Methods
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• 제19권5호
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• pp.663-671
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• 2012

In the present study, a combined ratio cum regression estimator is proposed to estimate the population mean of the study variable in the presence of a non-response using an auxiliary variable under double sampling. The expressions of bias and mean squared error(MSE) based on the proposed estimator is derived under double (or two stage) sampling to the first degree of approximation. Some estimators are also derived from the proposed class by allocating the suitable values of constants used. A comparison of the proposed estimator with the usual unbiased estimator and other derived estimators is carried out. An empirical study is carried out to demonstrate the performance of the suggested estimator and of others; it is endow that the empirical results backing the theoretical study.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.174-175
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• 2002

A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)MiO(60 nm)/barrier SrTiO$_3$(2-10 nm)/free NiFe(10 nm) with the 15 degree slope was investigated. We obtained nonlinear I(V) characteristics for ramp-type tunneling junctions that have distinctive difference with and without applied magnetic field. In the barrier SrTiO$_3$ thickness of 4 nm, the TMR was about 52% at a bias voltage of 50 mV. (omitted)

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.1
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• pp.133-138
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• 2006

Singular value decomposition (SDV) approach is applied to the observability analysis of GPS/INS in this paper. A measure of observability for a subspace is introduced. It indicates the minimum size of perturbation in the information matrix that makes the subspace unobservable. It is shown that the measure has direct connections with observability of systems, error covariance, and singular structure of the information matrix. The observability measure given in this paper is applicable to the multi-input/multi-output time-varying systems. An example on the observability analysis of GPS/INS is given. The measure of observability is confirmed to be less sensitive to system model perturbation. It is also shown that the estimation error for the vertical component of gyro bias can be considered unobservable for small initial error covariance for a constant velocity horizontal motion.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Journal of the Korean Statistical Society
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• 제35권4호
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• pp.377-395
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• 2006

In this paper we have suggested a family of chain estimators of the population mean $\bar{Y}$ of a study variate y using two auxiliary variates in two phase (double) sampling assuming that the coefficient of variation of the second auxiliary variable is known. It is well known that chain estimators are traditionally formulated when the population mean $\bar{X}_1$ of one of the two auxiliary variables, say $x_1$, is not known but the population mean $\bar{X}_2$ of the other auxiliary variate $x_2$ is available and $x_1$ has higher degree of positive correlation with the study variate y than $x_2$ has with y, $x_2$ being closely related to $x_1$. Here the classes are constructed when the population mean $\bar{X}_1\;of\;X_1$ is not known and the coefficient of variation $C_{x2}\;of\;X_2$ is known instead of population mean $\bar{X}_2$. Asymptotic expressions for the bias and mean square error (MSE) of the suggested family have been obtained. An asymptotic optimum estimator (AOE) is also identified with its MSE formula. The optimum sample sizes of the preliminary and final samples have been derived under a linear cost function. An empirical study has been carried out to show the superiority of the constructed estimator over others.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.16-17
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• 2010

Molecular spintronics has attracted attentions, which combines molecular electronics with the spin degree of freedom in electron transport. Among various molecules as candidates of the molecular spintronics, single molecule magnet (SMM) is one of the most promising material. SMM molecules show a ferromagnetic behavior even as a single molecule and hold the spin information even after the magnetic field is turned off. Here in this report, we show the spin behavior of SMM molecules adsorbed on the Au surface by combining the observation of Kondo peak in the STS and ESR-STM measurement. Kondo resonance state is formed near the Fermi level when degenerated spin state interacts with conduction electrons. ESR-STM detects the Larmor frequency of the spin in the presence of a magnet field. The sample include $MPc_2$ and $M_2Pc_3$ molecules ($M\;=\;Tb^{3+}$, $Dy^{3+}$, and $Y^{3+}$ Pc=phthalocyanine) whose critical temperature as a ferromagnet reaches 40 K. A clear Kondo peak was observed which is originated from an unpaired electron in the ligand of the molecule, which is the first demonstration of the Kondo peak originated from electron observed in the STS measurement. We also observed corresponding peaks in ESR-STM spectra. [1] In addition we found that the Kondo peak intensity shows a clear variation with the conformational change of the molecule; namely the azimuthal rotational angle of the Pc planes. This indicates that the Kondo resonance is correlated with the molecule electronic state. We examined this phenomena by using STM manipulation technique, where pulse bias application can rotate the relative azimuthal angle of the Pc planes. The result indicates that an application of ~1V pulse to the bias voltage can rotate the Pc plane and the Kondo peaks shows a clear variation in intensity by the molecule's conformational change.

• 대한한방내과학회지
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• 제41권3호
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• pp.350-361
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• 2020

Objective: This study aimed to report the therapeutic effect of acupuncture on chemotherapy-induced peripheral neuropathy (CIPN). Methods: The articles were sourced from databases including PubMed, EMBASE, Cochrane Library, CNKI, CiNii, WHO ICTRP, JSOM, KMBASE, KISS, NDSL, and OASIS as of July 2019. The main search keywords were peripheral neuropathy and acupuncture, and only randomized controlled trials using acupuncture for therapeutic purposes were included. Cochrane's risk of bias was used to assess the risk of bias, and the Review Manager 5.3 program was used for meta-analysis. Results: Six studies with a total 394 participants were included. When combined treatment of acupuncture and usual care was compared with usual care alone, quality of life improved more significantly in the combination treatment group (SMD=-2.71, 95% CI: -5.01 to -0.41, P=0.02, I²=97%). The CIPN pain score was lower among the combination treatment group, but not to a significant degree (SMD=-2.55, 95% CI: -5.14 to 0.04, P<0.05, I²=98%). There were no severe side effects in any studies. Conclusion: Acupuncture combined with usual care may be considered to safely relieve CIPN pain and improve quality of life for cancer patients. However, as there are few randomized controlled trials studying the effect of acupuncture on CIPN, further well-designed research is needed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국수자원학회논문집
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• 제44권12호
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• pp.991-1000
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• 2011

저수지 탁수 모델링에서 실측자료가 없는 경우 유입하천 부유사 농도(SS) 산정을 위해 유량(Q)과 SS 관계식이 자주 사용된다. 일반적으로 하천을 통과하는 SS 부하율은 유량에 의해 변동된다는 가정 하에 유량과 SS의 멱함수(SS=aQb) 관계가 가장 빈번히 적용되고 있다. 그러나 Q-SS 관계는 측정 지점에 따라 배타적 특성을 가지며, 동일 지점에 대해서도 연중 계절적 변동성이 있다. 더욱이, Q-SS 관계는 동일한 수문곡선에서도 유량 상승기와 하강기에 이격현상을 보이기도 한다. 본 연구의 목적은 용담댐 저수지와 소양강댐 저수지 유입 하천에서 강우시 연속 실측한 자료를 바탕으로 Q-SS 관계의 이격현상을 고찰하고, SS 부하율 산정 오차에 미치는 영향을 분석하는데 있다. 연구결과, Q-SS 관계는 홍수사상 동안 높은 분산도와 시계방향의 이격현상을 보였으며, 동일한 유량에 대해 유량 상승기가 하강기보다 SS 농도가 높게 나타났다. 이러한 이격현상은 저수지로 유입하는 SS 부하량 산정에 있어 유의할 만한 오차로 작용하였으며 Q-SS 멱함수는 실측 부하량을 과소평가하는 결과를 가져왔다. 이것은 저수지 탁수모델링에서 중요하게 고려해야 할 사항이다. 본 연구에서는 Q-SS 관계식의 대안으로 탁도-SS관계가 제시되었다. 탁도-SS 관계는Q-SS 관계보다 분산도가 작았으며 실측 부하량과의 오차를 획기적으로 줄였다. 따라서 저수지로 유입하는 SS 부하율의 보다 정확한 산정과 탁수모델링의 신뢰도를 높이기 위해서는 유입 탁도에 대한 실시간모니터링이 필요하다.