• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1029-1034
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• 2003

The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.478-481
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• 2002

We carried out the experiments for fabricating $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$(Bi2223) superconductor thick films on Cu tapes. Cu-free (Bi,Pb)-Sr-Ca-0 powder mixtures were screen- printed on Cu tapes and heat-treated at 840-$860^{\circ}C$ for several minutes in air. Surface microstructures and phases of films were analyzed by XRD and optical microscope. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the printing layers were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure, it is thought that Bi2223 superconducting particles nucleate at interfaces between Bi2212 phase and liquid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1204-1207
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• Structural Engineering and Mechanics
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• v.59 no.1
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• pp.101-122
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• 2016

Elasticity solutions for bi-directional functionally graded beams subjected to arbitrary lateral loads are conducted, with emphasis on the end effects. The material is considered macroscopically isotropic, with Young's modulus varying exponentially in both axial and thickness directions, while Poisson's ratio remaining constant. In order to obtain an exact analysis of stress and displacement fields, the symplectic analysis based on Hamiltonian state space approach is employed. The capability of the symplectic framework for exact analysis of bi-directional functionally graded beams has been validated by comparing numerical results with corresponding ones in open literature. Numerical results are provided to demonstrate the influences of the material gradations on localized stress distributions. Thus, the material properties of the bi-directional functionally graded beam can be tailored for the potential practical purpose by choosing suitable graded indices.

• Metals and materials international
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• v.24 no.6
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• pp.1262-1274
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• 2018

The inhibition of gravity segregation has been a long-standing challenge in fabrication and applications of homogeneous immiscible alloys. Therefore, the effect of rare-earth La on the gravity segregation of Al-Bi immiscible alloys was investigated to understand the homogenization mechanism. The results showed that the addition of La can completely suppress the gravity segregation. This is attributed to the nucleation of Bi-rich liquid phase on the in-situ produced $LaBi_2$ phase and the change of the shape of $LaBi_2@Bi$ droplets. In addition, a novel strategy is developed to prepare the homogeneous immiscible alloys through the addition of rare-earth elements. This strategy not only is applicable to other immiscible alloys, but also is conducive to finding more elements to suppress the gravity segregation. This study provided a useful reference for the fabrication of the homogeneous immiscible alloys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.500-502
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• 2000

BiPbSrCaCuO 계 초전도체에서 관측되는 자기부양효과에 대하여 연구를 수행하였다. BiPbSrCaCuO 계 초전도체에 산화은을 첨가한 시료와 첨가하지 않은 시료의 자기적 특성을 측정하여 자기부양효과의 메카니즘에 대하여 고찰하였다. toroidal자석에서 관측되는 자기부양 효과는 자석의 중심부분에서만 발생하며, 자석의 ring 부분에서는 관측되지 않았다. 이 결과는 본 연구의 자기 부양효과의 발생에는 자석의 형상 및 자속의 분포 형태와 밀접한 관련이 있음을 의미한다.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.12-15
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• 2001

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature (T $_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases are limited within very narrow temperature.e.