• Title/Summary/Keyword: bi-layer printing

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Bi-layer Gravure Printed Organic Light Emitting Layers with MEH-PPV and Rubrene

  • Kim, A-Ran;Lee, Hye-Mi;Cho, Sung-Min;Chae, Hee-Yeop
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1508-1510
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    • 2009
  • In this work, we have compared OLED devices made of blended MEH-PPV/Ruburene mixture and MEH-PPV/Rubrene bi-layer structure devices. The emission layers were made with two different ways - one with gravure printed single layer of blended mixture of MEH-PPV and rubrene, the other with gravure printed bilayers of MEH-PPV and rubrene. Both brightness and efficiency with gravure printed bi-layer devices were higher than blended devices. In this work, we demonstrated that organic bi-layers can be formed with gravure printing technology and higher efficiency can be achieved with bi-layer structure than with blended single layer structure.

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The Effect of the precursor powder composition for Bi-system superconducting thick films on Cu tapes (동테이프 위의 Bi-계 초전도 후막에서 전구체분말 조성의 영향)

  • 한상철;성태현;한영희;이준성;김상준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.65-68
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    • 1999
  • A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

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Fabrication of Cu-Sheathed Bi-Sr-Cu-O High Temperature Superconductor Thick Films (동피복재법을 이용한 Bi-Sr-Ca-Cu-O 고온초전도 후막 제조)

  • 한상철;성태현;한영희;이준성;정상진
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 1999.02a
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    • pp.22-25
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    • 1999
  • A well oriented Bi-2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-Cu-O powder on a copper plate and heat-treating at 820- $880^{\circ}C$for several minute in low oxygen pressure or are. At minute in low oxygen pressure of air. At , the printing layer partially melted by reaction between the Cu-free precursor by reaction between the Cu-free$870^{\circ}C$ precursor and CuO of the oxidizing copper plate. It is believed that the solid phase is Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. It is likely that the Bi-2212 superconducting phase is formed at Bi-2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows.

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Contact Transfer Printing Using Bi-layer Functionalized Nanobio Interface for Flexible Plasmonic Sensing

  • Lee, Jihye;Park, Jiyun;Lee, Junyoung;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.413-413
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    • 2014
  • In this paper, we present a fabrication method of functionalized gold nanostructures on flexible substrate that can be implemented for plasmonic sensing application. For biomolecular sensing, many researchers exploit unconventional lithography method like nanoimprint lithography (NIP), contact transfer lithography, soft lithography, colloidal transfer printing due to its usability and easy to functionalization. In particular, nanoimprint and contact transfer lithography need to have anti-adhesion layer for distinctive metallic properties on the flexible substrates. However, when metallic thin film was deposited on the anti-adhesion layer coated substrates, we discover much aggravation of the mold by repetitive use. Thus it would be impossible to get a high quality of metal nanostructure on the transferred substrate for developing flexible electronics based transfer printing. Here we demonstrate a method for nano-pillar mold and transfer the controllable nanoparticle array on the flexible substrates without an anti-adhesion layer. Also functionalization of gold was investigated by the different length of thiol applied for effectively localized surface plasmonic resonance sensing. First, a focused ion beam (FIB) and ICP-RIE are used to fabricate the nanoscale pillar array. Then gold metal layer is deposited onto the patterned nanostructure. The metallic 130 nm and 250 nm nanodisk pattern are transferred onto flexible polymer substrate by bi-layer functionalized contact imprinting which can be tunable surface energy interfaces. Different thiol reagents such as Thioglycolic acid (98%), 3-Mercaptopropionic acid (99%), 11-Mercaptoundecanoic acid (95%) and 16-Mercaptohexadecanoic acid (90%) are used. Overcoming the repeatedly usage of the anti-adhesion layer mold which has less uniformity and not washable interface, contact printing method using bi-layer gold array are not only expedient access to fabrication but also have distinctive properties including anti-adhesion layer free, functionalized bottom of the gold nano disk, repeatedly replicate the pattern on the flexible substrate. As a result we demonstrate the feasibility of flexible plasmonic sensing interface and anticipate that the method can be extended to variable application including the portable bio sensor via mass production of stable nanostructure array and other nanophotonic application.

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Interfacial Reaction between 42Sn-58 Bi Solder and Electroless Ni-P/Immersion Au UBM during Aging (시효 처리에 의한 42Sn-58Bi 솔더와 무전해 Ni-P/치환 Au UBM 간의 계면 반응)

  • Cho Moon Gi;Lee Hyuck Mo;Booh Seong Woon;Kim Tae-Gyu
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.95-103
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    • 2005
  • The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

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Rapid Fabrication of Bi2212 Superconducting Films on Cu Tape with Cu-free Precursor (Cu-free 전구체를 이용한 동 테이프 위의 Bi2212 초전도 후막의 급속 제조)

  • 한상철;성태현;한영희;이준성;김상준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.69-72
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    • 1999
  • A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

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A study on the fabrication and characterization of high temperature superconducting(HTS) tapes in Bi-System (Bi-계 고온초전도 선재의 제조 및 특성 연구)

  • 정년호;성태현;한영희;한상철;이준성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.474-477
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    • 2002
  • We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

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Experimental Fabrication of Low Pass Filter of $BiNbO_4$ Ceramics ($BiNbO_4$세라믹스를 이용한 저역통과 필터에 관한 연구)

  • Ko, Sang-Ki;Kim, Kyung-Yong;Kim, Byong-Ho;Choi, Whan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.281-287
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    • 1998
  • $BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.

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Microstructure Analysis of Cu/Bi2212 High Temperature Superconducting Tapes with Meat-Treatment Atmosphere (열처리 분위기에 따른 동/Bi2212 고온초전도 테입의 미세구조)

  • Han, Sang-Chul;Sung, Tae-Hyun;Han, Young-Hee;Lee, Jun-Seong;Lee, Won-Tak;Kim, Sang-Jun
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.388-391
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    • 1999
  • Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

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Optical Properties of Bi2O3-ZnO-SiO2 Glass System for Transparent Dielectric (Bi2O3-ZnO-SiO2 유리계의 투명유전체 후막에서 나타난 광학특성)

  • Jun J. S.;Cha M. R.;Kim H. S.
    • Korean Journal of Materials Research
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    • v.14 no.9
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    • pp.670-675
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    • 2004
  • Glasses in the $Bi_{2}O_3-SiO_2-ZnO$ glasses system were examined as a potential replacement for lead-oxide glass frits with low firing temperature ($500\sim600^{\circ}C$) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature($T_{g}$) and thermal expansion coefficient(${\alpha}$). After forming transparent thick films by a screen-printing method, it was evaluated for the optical properties. The transmittance of thick films fired at $500-600^{\circ}C$ showed above $80\%$, which was not dependent on the firing temperature. As a result, many pores were observed at samples fired at low temperature, while the number of pores from samples prepared at high temperature decreased and the pores size increased.