• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.195-199
• /
• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.828-833
• /
• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.111-114
• /
• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.202.1-202.1
• /
• 2013

ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.19 no.1
• /
• pp.35-40
• /
• 2014

Hatching date, main spawning period and growth of juvenile marbled flounder (Pseudopleuronectes yokohamae) were determined by analysis of microstructure in otoliths. Marbled flounders were collected by a small beam trawl in Namhae from February 2011 to January 2012. The length (L, mm) was related to body weight (W, g); $W=9.76^*10^{-8}L^{4.39}$ ($r^2=0.93$). The length was also related to otolith radius (R, ${\mu}m$); L=0.0795R+0.2249 ($r^2=0.92$). The growth in length was represented by Gompertz growth curve; $L_t=135{\exp}\{-{\exp}[0.0103(t-116)]\}$ ($r^2=0.83$). The hatching date calculated from the number of daily growth increments in otoliths was between mid-December and mid-February.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.167-170
• /
• 1998

To apply diamond films in microelectromechanical systems(MEMS), it is necessary to develop the patterning technologies of diamond films in the micrometer scale. In this paper, three different kinds of technologies for patterning CVD diamond films carried out by us were demonstrated: selective growth by improved diamond nucleation in DC bias-enhanced microwave plasma chemical vapor deposition (MPCVD) system, selective growth of seeding using diamond-particle-mixed photoresist, and selective etching of oxygen ion beam using Al as the mask. It was show that high selectivity and precise patterns had been achieved, and all the processes were compatible with IC process.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.5
• /
• pp.80-86
• /
• 1998

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2005.11a
• /
• pp.173-176
• /
• 2005

This study look into the mechanisms of growth and magnification in the cracks and delamination on the beams repaired with CFS. The experimental parameters was a loading type, loading speed and pre-crack. In the experiments, it was confirmed that the failure of beams began with development and propagation of the delamination in the below the loading point due to magnification of cracks, but it was not concerned with loading type, loading speed and pre-cracks. Particularly, in the case of beams having the pre-cracks, growth of crack concentrated at the special crack below the loading point and led to failure of the beam by delamination due to magnification of crack.

• ETRI Journal
• /
• v.20 no.2
• /
• pp.231-240
• /
• 1998

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.142-148
• /
• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.