• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.26-26
• /
• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Food Science of Animal Resources
• /
• v.22 no.4
• /
• pp.322-329
• /
• 2002

Ground pork was packaged(purged) with modified atmosphere (n$_2$ and CO$_2$) and irradiated with the electron beam in order to find out whether modified atmosphere packaging (MAP) inhibit the microbial growth and lipid oxidation development caused by electron beam irradiation. After packaging and irradiation, ground pork was stored at 4$^{\circ}C$ for 6 days and -15$^{\circ}C$ for 3 months, and periodically the microbial counts and the thiobarbituric acid reactive substances (TBARS) for the determination of lipid oxidation were measured. The inhibition of growth of total aerobic bacteria and mesophiles was confirmed when the ground pork was irradiated with the electron beam dose of 1.5 and 3.0 kGy. The N$_2$ or CO$_2$ purging alone was also effective in reducing the development of lipid oxidation of ground pork during storage at 4 and -15$^{\circ}C$. The combination of electron beam irradiation(1.5 and 3.0 kGy) with MAP (N$_2$ or CO$_2$) was effective to inhibit the growth of total aerobic bacteria and mesophiles, and retard the lipid oxidation of ground pork during storage at 4$^{\circ}C$ for 6 days and -15$^{\circ}C$ for 3 months.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.82-91
• /
• 1991

Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.8
• /
• pp.1512-1519
• /
• 2002

Most of mechanical failures are caused by repeated loadings and therefore they are strongly related to fatigue. To avoid the failures caused by fatigue, determination of an optimal shape of a structure is one of the very important factors in the initial design stage. Shape optimization fer two types of specimens, which are very typical ones in opening mode in fracture mechanics, was accomplished by the linear elastic fracture mechanics and the growth-strain method in this study. Also shape optimization for a cantilever beam in mixed mode was carried out by the same techniques. The linear elastic fracture mechanics was used to estimate stress intensity factors and fatigue lives. And the growth-strain method was used to optimize the shape of the initial shape of the specimens. From the results of the shape optimization, it was found that shapes of two types of specimens and a cantilever beam optimized by the growth-strain method prolong their fatigue lives significantly. Therefore, it was verified that the growth-strain method is an appropriate technique for shape optimization of a structure having a crack.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.5-18
• /
• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Korean Journal of Plant Resources
• /
• v.18 no.1
• /
• pp.169-178
• /
• 2005

Effects of heavy-ion beam$(^{20}Ne)$ irradiation on growth and DNA alteration of tobacco plants were investigated. Seed germination and plant height were decresed as the ion-beam intensity was increased. However, the bolting and flowering were promoted by the low intensities of 5 Gy to 10 Gy treatment. Out of the 100 primers screened, 59 primers generated 336 DNA fragments by RAPD analysis, and one specific DNA fragment that amplified in control but not in the ion-beam irradiated plants was observed. By AFLP analysis, DNA fragment difference related to the ion-beam treatment was not detected but observed among the plant bodys.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.27 no.2
• /
• pp.236-242
• /
• 2003

Thermal bubbles find their diverse application areas in the MEMS (MicroElectroMechanial Systems) technology, including bubble jet printers, microactuators, micropumps, etc.. Especially, microactuators and micropumps, which use a microbubble growing by a controlled heat input, frequently involve mechanical and thermal interaction of the bubble with a solid structure, such as a cantilever beam and a membrane. Although the concept is experimentally verified that an internal pressure of the bubble can build up high enough to deflect a thin solid plate or a beam, the physics of the entire process have not yet been thoroughly explored. This work reports the experimental study of the growth of a thermal bubble while deflecting a thin cantilever beam. A physical model is presented to predict the elastic response of the cantilever beam based on the experimental measurements. The scaling law constructed through this work can provide a design guide for micro- and nano-systems that employ a thermal bubble for their actuation/pumping mechanism.

• Journal of the Korean Vacuum Society
• /
• v.12 no.2
• /
• pp.144-149
• /
• 2003

Carbon tips were grown on Si cantilevers by applying an electron beam to them directly with Scanning Electron Microscope. A carbon tip was fabricated by aligning the electron beam directly down the vertical axis of Si cantilever and then irradiating a single spot on the cantilever for a proper time in the dominant atmosphere of residual gases generated by the oil of the diffusion pump. A number of control parameters for SEM, including exposure time, acceleration voltage, emission current, and beam probe current, were allowed to make various aspect ratio feature. The growth of carbon tips was not affected by the surface morphology of substrates. We could acquired the tip whose effective length is 0.5 $\mu\textrm{m}$, bottom diameter is 90 nm and cone half angle $3.5^{\circ}$ The growth technique of the high aspect ratio carbon tips on the tip-free cantilevers is available to reduce the complexities of fabricating sub-micron scale tips on the PZT thin film actuator integrated AFM cantilevers.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.70-75
• /
• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Journal of the Korean Magnetics Society
• /
• v.21 no.3
• /
• pp.93-98
• /
• 2011

We successfully grew $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) thin film using Laser Molecular-Beam Epitaxy and studied post-growth annealing effects ($750^{\circ}C$, 5 h) on its crystal structural and magnetic properties. Whereas the single-layered LPCMO and LPCMO/STO superlattice thin films show rough surface before and after the post-growth annealing, LPCMO/LAO superlattice shows a relatively very flat surface even after the post-growth annealing. The enhancement of ferromagnetism of LPCMO/LAO superlattice after the post-growth annealing was remarkable compared to the single-layered LPCMO thin film. The coercive and saturation magnetic field of the single-layed LPCMO thin film were decreased after the post-annealing. However, for LPCMO/LAO superlattice, a same coercive and increased saturation magnetic field were exhibited after post-growth annealing. We suggest that these peculiar observations are originate from the super-structure of LPCMO and LAO.