• The Journal of Korean Academy of Prosthodontics
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• v.49 no.4
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• pp.333-340
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• 2011

Purpose: The aim of this study was to study the effect of hydroxyapatite (HA) coating crystallinity on the proliferation and differentiation of human osteosarcoma cells. Materials and methods: Surface roughness of the titanium disks increased by anodizing treatment and then HA was coated using ion beam-assisted deposition (IBAD). HA coating was crystallized by heat-treated at different temperature ($100^{\circ}C$, $300^{\circ}C$, $500^{\circ}C$, $800^{\circ}C$). According to the temperature, disks were divided into four groups (HA100, HA300, HA500, HA800). With the temperature, crystallinity of the HA coating was different. Anodized disks were used as control group. The physical properties of the disk surface were evaluated by surface roughness tests, XRD tests and SEM. The effect of the crystallinity of HA coating on HOS cells was studied in proliferation and differentiation. HOS cells were cultured on the disks and evaluated after 1, 3, 5, and 7 days. Growth and differentiation kinetics were subsequently investigated by evaluating cell proliferation and alkaline phosphatase activity. Results: Regardless of the heat-treated temperature, there is no difference on the surface roughness. Crystallinity of the HA was appeared in the groups of HA500, HA800. HOS cells proliferation, ALP activity were higher in HA500 and HA800 group than HA100 and HA300. Conclusion: Within the results of this limited study, heat treatment at $500^{\circ}C$ of HA coating produced by IBAD has shown greater effect on proliferation and differentiation of HOS cells. It is considered that further in vivo study will be necessary.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.15-24
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• 2003

The purpose of this study is to investigate the sterilization effect of Er:YAG laser against the intraoral acid producing bacterium, S. mutans, by irradiating the culture solution containing S. mutans KCTC 3065 with Er:YAG laser having a $650{\mu}m$ diameter beam through the non-contact method. We obtained the following results after examining the temperature changes of the culture solution, numbers of bacterial colonies, and acid-producing ability and attaching ability on teeth by measuring the amount of extracellular polysaccharide produced by S. mutans. The number of bacterial colony was decreased in $10{\mu}l$ culture solution irradiated with laser in overall compared to the control solution. The number decreased as the irradiation intensity and pulse repetition rate were larger and as the exposure time was increased. However, it did not change significantly in $100{\mu}l$ culture solution compared to the control solution. Although the acid-producing ability of S. mutans was inhibited for a certain duration after laser irradiation in 10r1 bacterial culture solution, it did not change in $100{\mu}m$ solution compared with the control solution. The amount of extracellular polysaccharide synthesized by S. mutans was partially decreased through laser irradiation in $10{\mu}m$ culture solution but did not change in $100{\mu}m$ culture solution. Based on these findings, we concluded that Er:YAG laser has an sterilization effect on S. mutans in which we presume that the mechanism is through the heat effect rather than the mechanical effect from development of ultrasound.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.353-353
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• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.

• Food Science of Animal Resources
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• v.37 no.5
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• pp.698-707
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• 2017

This study was performed to investigate the impacts of irradiation sources on quality attributes of low-salt sausage during refrigerated storage. Control sausage was prepared with 1.5% sodium chloride (NaCl), whereas low-salt sausage was formulated with 0.75% NaCl (a 50% reduction; L-control). Sausage samples were vacuum-packaged, and low-sausages were irradiated with gamma-ray, electron-beam and X-ray at 5 kGy, respectively. The samples were stored at $4^{\circ}C$ for 28 d to determine changes in quality attributes. The pH of low-salt sausages was unaffected by irradiation at 5 kGy (p>0.05). Higher redness values were found at irradiated low-salt sausages compared to control (p<0.05). The hardness, gumminess and chewiness of control sausage were higher than those of low-salt sausages (p<0.05). However, there were no significant differences in the textural parameters between low-salt sausage treatments. The overall sensory acceptability score of irradiated/low-salt sausages were lower than L-control due to decreased scores for cooked meat flavor but increased radiolytic off-flavor (p<0.05). The initial 2-thiobarbituric acid-reactive substances (TBARS) values of irradiated/low-salt sausages were higher than control and L-control (p<0.05). However, the TBARS values of irradiated treatments were significantly lower than control at the end of storage. Irradiation could effectively inhibit the microorganism growth (total aerobic bacteria, coliforms, Enterobacteriaceae, and Pseudomonas spp.) in low-salt sausages (p<0.05). Therefore, our findings show that irradiation could be to improve microbial safety of low-salt sausages, and suggest that further studies should be necessary to reducing radiolytic off-flavor of irradiated/low-salt sausages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.425-425
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• 2009

그라핀을 금속 촉매를 이용하여 상압 혹은 저진공 CVD로 성장할 경우 대형 기판을 쉽게 얻을 수 있으므로 최근 들어 금속 촉매를 이용한 CVD 기술이 재 각광받고 있다. 최근 MIT의 Jing Kong 그룹, Purdue 대학의 Yong P. Chen 그룹, 국내에서는 성균관대학에서 이에 대한 논문을 발표한 바 있다. CVD 방법의 가장 큰 장점은 그라핀 박막의 가장 큰 문제점 중 하나인 대형 기판에 매우 유리하다는 점이다. 본 연구에서는 결함 없는 대형 그라핀기판을 얻기위해 Si/$SiO_2$/Ni 박막위에 그라핀을 LPCVD로 성장하는 실험을 진행하였다. 우선 시료는 Si위에 $SiO_2$를 Sputtering으로 증착하였고, 그 위에 250nm, 300nm두께의 Ni 박막을 e-beam evaporator로 증착하였다. $0.5-1cm^2$ 크기의 샘플을 Thermal CVD 장비를 이용하여 그라핀을 성장하는 실험을 진행하였다. 성장 압력은 95 torr, 성장온도는 $800^{\circ}C$, $850^{\circ}C$, $900^{\circ}C$에서 Hydrocarbon ($C_2H_2$)을 5min, 10min으로 성장시간을 split하였다. Hydrocarbon을 흘리기 전에 Ni grain을 성장하기 위해 성장온도에서 30~60min정도 $H_2$분위기에서 Ni 산화막의 환원 및 어닐링을 진행하였다. 그림.1은 $850^{\circ}C$, 5분간 성장한 그라핀/Ni 샘플의 광학사진이다. 그림.2는 $850^{\circ}C$에서 5min, 10min 성장한 샘플의 Raman spectrum이다. (파장은 514.532nm). 850C 10min 샘플은 G>G' peak 이지만, 5min으로 성장한 샘플의 경우 G'>G peak 임을 알 수 있고, 따라서 5min의 조건에서는 층 두께가 4층 미만의 그라핀 박막을 얻을 수 있음을 보여준다. 또한 G' peak의 위치가 두께가 감소할수록 내려감을 확인할 수 있다. 다만 D peak가 실험한 대부분의 샘플에서 보여서 아직 성장한 그라핀의 결합이 많은 것으로 보인다. 이러한 이유는 성장온도가 낮은 것이 일차 원인으로 생각되며 박막의 균일도 향상과 결함을 줄이기 위한 추가적인 개선 실험을 진행 중이다.

• The Journal of the Petrological Society of Korea
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• v.11 no.3_4
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• pp.157-168
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• 2002

In Gimcheon area of the central Yeongnam massif granite gneiss occurrs with intercalated biotite gneiss at xenolith or restite. In order to understand the evolution of the central Yeongnam massif, it is essential to have absolute age information, but not many age data are available yet. Furthermore the previous age determinations from the study area are not compatible with the outcrop relationship. In this study we determined chemical ages from the zircon grains. We obtained ages of $1970\pm$ 78(l$\sigma$)Ma from the granite gneiss, $1814\pm$77(l$\sigma$)Ma from the outer rim of a rounded zircon and 1973$\pm$97(l$\sigma$)Ma from a longish zircon, both from the biotite gneiss. These ages seem to indicate the timing of granitic magma intrusion and subsequent metamorphism. Ages of $2954\pm$ 158($l\sigma$)Ma, 2440$\pm$58(l$\sigma$)Ma, and 2219$\pm$36($l\sigma$)Ma obtained from zoned core of the rounded zircon grain from the biotite gneiss suggest various geological events before such metamorphism of the biotite gneiss. Ages in the range of 1450~1670 Ma observed in zircons of both gniesses suggest later metamorphism that the granite gneiss and the biotite gneiss experienced together. The chemical age determination by electron probe micro-analyzer of this study utilized 1$\mu\textrm{m}$ beam diameter and it seems to be a very useful age determination from the zircons with complex growth history because of superior spatial resolution.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Korean Journal of Animal Reproduction
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• v.22 no.3
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• pp.287-292
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• 1998

The objective of this study was to test whether ZP drilling using a 1.48$\mu$m diode laser beam on mouse IVF embryos becomes effective the hatching and normal in vivo development, as a preliminary test for obtaining the additional proof that the 1.48$\mu$m diode laser could be used safely for human applications. The results obtained in this experiment were as follows: when the hatched rates of mouse embryos by laser ZP drilling according to the embryonic stage were examined until 72 hr (in case of blast tocyst: day 4 after IVF) or 120 hr (in case of 4-cell: day 2 after IVF) after treatment, the d data of laser drilled blastocysts (81.8%) was significantly higher than those of control (hatching blastocyst: day 4 after IVF) (54.2%) and laser drilled 4-cell embryos (45.5%) (p<0.05). When the effect of laser drilling on implantation rates following embryo transfer in day 3 synchronized pseudopregnant recipients was examined, the l laser drilled group (48.7%) was slightly higher than that of control group (43.6%). In addition, when the several pregnant mice delivered in two groups were analysed their chromosomal normality and tested reproductive ability, all p pups were presented normal chromosomal number (n=40) and showed normal growth and reproductive ability. Therefore, these results dem-onstrated that ZP drilling using a 1.48$\mu$m diode l laser can increase the embryo hatching and ind duce the normal pregnancy of mouse embryos.