• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.115-119
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• 2011

A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.157-163
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• 2019

The LiDAR sensor, which is widely regarded as one of the most important sensors, has recently undergone active commercialization owing to the significant growth in the production of ADAS and autonomous vehicle components. The LiDAR sensor technology involves radiating a laser beam at a particular angle and acquiring a three-dimensional image by measuring the lapsed time of the laser beam that has returned after being reflected. The LiDAR sensor has been incorporated and utilized in various devices such as drones and robots. This study focuses on object detection and recognition by employing sensor fusion. Object detection and recognition can be executed as a single function by incorporating sensors capable of recognition, such as image sensors, optical sensors, and propagation sensors. However, a single sensor has limitations with respect to object detection and recognition, and such limitations can be overcome by employing multiple sensors. In this paper, the performance of an eight-channel scanning LiDAR was evaluated and an object detection algorithm based on it was implemented. Furthermore, object detection characteristics during daytime and nighttime in a real road environment were verified. Obtained experimental results corroborate that an excellent detection performance of 92.87% can be achieved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• Korean Journal of Ichthyology
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• v.9 no.1
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• pp.61-70
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• 1997

The spawning season, growth and feeding habit of tubesnout, Aulichthys japonicus were examined from the samples collected by a small beam trawl in the Zostera marina belt at the coastal water off Hamduck, Cheju Island, from May 1993 to May 1994. Tubesnout was the dominant species of overall 58 species collected in the study area throughout the year. The larvae and juvenile of tubesnout in the frequency distributions of body length began to appear in the Z. marina belt in March, and adults disappeared after May in the following year. The gonad weight index (GWI) and the condition factor (K) were high from November 1993 to January 1994 for males, while females were high from February to May 1994. Although tubesnout is an oviparous fish, males have the urogenital papilla. These results suggest that they were fertilized between November and January, and then males seemed to be died or move into other places. Females were examined to spawn from February to May. The stomach contents of tubesnout were dominated by copepoda smaller than ca. 1mm, Paracalanus, Oithona, Acartia, Oncaea and Harpacticoidae, accounting for 97% of total food items. The feeding habit of tubesnout did not vary by size. The fishes fed on Calanus, Euchaeta and decapoda larvae larger than ca. 3mm in March and April during the spawning season.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.1-6
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• 2010

CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at $1090^{\circ}C$ for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state, the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer bye-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.659-662
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• 2018

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

• Journal of the Korea Concrete Institute
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• v.19 no.6
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• pp.677-684
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• 2007

This study investigates the failure mechanism of RC beams strengthened with GFRP (glass fiber reinforced polymer) sheets. After analyzing failure mechanisms, the various methods to prevent the debonding failures, such as increasing bonded length of GFRP sheets, U-shape wrappings and epoxy shear keys are examined. The bonded length of GFRP sheets are calculated based on the assumed bond strengths of epoxy resin. The U-shape wrappings are either adopted at the end or center of the CFRP sheets bonded to the beam soft. The epoxy shear keys are embedded to the beam soft to provide sufficient bond strength. The end U-wrappings and the center U-wrappings are conventional, while epoxy shear keys are new details developed in this study. A total six half-scale RC beams have been constructed and tested to investigate the effectiveness of each methods to prevent debonding failure of GFRP sheets. From the experimental results, it was found that increasing bonded length or end U-wrappings do not prevent debonding failure. On the other hand, the beams with center U-wrappings and shear keys reached an ultimate state with their sufficient performance. The center U-wrappings tended to control debonding of the longitudinal GFRP sheets because the growth of the longitudinal cracks along the edges of the composites was delayed. In the case of shear keys, it was sufficient to prevent debonding and the beam was failed by GFRP sheets rupture.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.194-200
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• 2006

Self-assembled InAs/InAl(Ga)As quantum dots (QDs) were grown on InP substrates by a molecular-beam epiaxy, and their structural and optical properties were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and room-temperature photoluminescence (PL). AFM images indicated that the InAs quantum structures showed various shapes such as quantum dashes, asymmetric and symmetric QDs mainly caused by the initial surface conditions of InAl(Ga)As with the intrinsic phase separation. For the buried InAs QDs in an InAlGaAs matrix, the average lateral size and height of QDs were 23 and 2 nm, respectively. By changing the growth conditions for the QD samples, the emission wavelength of $1.55{\mu}m$ was obtained, which is one of the wavelength windows for fiber optic communications.