• Laser Solutions
• /
• v.1 no.1
• /
• pp.18-23
• /
• 1998

A Study on microstructural changes of sensitized Alloy 600 which was rapidly solidified by a $CO_2$ laser beam was conducted using microscopic equipments such as SEM and TEM. Dissolution of Cr-rich carbides and resultant Cr recovery on the grain boundaries occurred in the heat affected zone (HZA). The microstructure of the laser melted zone (LMZ) having epitaxially solidified from the HAZ was mainly celluar-dendritic with the 〈100〉 crystallographic direction of growth. The Cr concentration was observed to increase along the cell bondaries, and tiny particles were distributed along the cell walls with tangled dislocations around them. Cr-rich carbides had been completely melted by the high density of a laser beam, and were not re-precipitated during the matrix solidification due to a fast cooling rate in the LMZ.

• Laser Solutions
• /
• v.4 no.1
• /
• pp.29-38
• /
• 2001

This work was carried out to investigate the welding behavior of thin A3003 Al alloy sheets by Nd : YAG laser beam. Considering bead shape and mechanical properties, the laser pulse shapes selected were two kinds of 2-division and 3-division by varying power level and pulse duration. In order to obtain optimum conditions, the factorial design method and central composite design method were applied. Tensile test, optical microscopy, micro hardness test and TEM analysis were performed. Due to the annealing caused by thermal effect during laser welding, precipitates were coarsended. The HAZ was softened and failed during tensile test. The hardness of HAZ was lower than that of base metal, since the heat input relieved the work hardening effect and caused grain growth.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.5
• /
• pp.695-701
• /
• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Steel and Composite Structures
• /
• v.16 no.5
• /
• pp.481-489
• /
• 2014

The function of carbon fibre reinforced polymer (CFRP) reinforcement in increasing the ductility of reinforced concrete (RC) deep beam is important in such shear-sensitive RC member. This paper aims to investigate the effect of CFRP-strengthening on the energy absorption of RC deep beams. Six ordinary RC deep beams and six CFRP-strengthened RC deep beams with shear span to the effective depth ratio of 0.75, 1.00, 1.25, 1.50, 1.75, and 2.00 were tested till failure in this research. An empirical relationship was established to obtain the energy absorption of CFRP-strengthened RC deep beams. The shear span to the effective depth ratio and growth of energy absorption of CFRP-strengthened deep beam were the significant factors to establish this relationship.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.10a
• /
• pp.40-44
• /
• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.796-800
• /
• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.13 no.2
• /
• pp.112-119
• /
• 2004

This paper discussed on the effect of an internal damping on the stability of an elastic material subjected to dry friction force. Dry friction forces act tangentially at the contact surface between a moving belt and elastic material. The elastic material on a belt moving is modeled for simplicity into a cantilevered beam subjected to distributed follower force. In the analysis, the discretized equations derived according to finite element method are used. The impulse response of the beam are studied by the mode superposition method to observe the growth rate of the motion. It is found that the internal damping in cantilevered beam subjected to distributed follower force may act destabilizing.

• Advanced Composite Materials
• /
• v.17 no.3
• /
• pp.301-317
• /
• 2008

The energy release rate associated with crack growth in adhesive double cantilever beam (DCB) specimens, including the effect of residual stresses, was formulated using beam theory. Because of the rotation of the asymmetric arms in the adhesive DCB specimens due to temperature change, it is necessary to correct the evaluated fracture toughness of the DCB specimens, specifically in the case of a large temperature change. This study shows that the difference between the true toughness and an apparent toughness due to the consequence of ignoring residual stresses can be calculated for a given specimen geometry and thermo-mechanical properties (e.g. coefficient of thermal expansion). The calculated difference in the energy release rates based on the present correction method is compared with that from FEM in order to verify the present correction method. The residual stress effects on the evaluation of the adhesive fracture toughness are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.230-234
• /
• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.7-10
• /
• 2000

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.