• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.279-279
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• 2011

나노 입자를 이용한 비휘발성 메모리 소자의 전기적 특성 향상을 위하여 일함수가 Si 보다 큰 금속, 금속산화물, 금속 실리사이드 나노입자를 이용한 다양한 형태의 메모리 구조가 제안되어져 왔다.[1] 특히 이와 같은 나노 부유 게이트 구조에서 터널 절연막의 구조를 소자의 동작 속도를 결정하는데 이는 터널링 되어 주입되는 전자의 확률에 의존하기 때문이다. 양자 우물에 국한된 전하가 누설되지 않으면서 주입되는 전자의 터널링 확률을 증가시키기 위하여, dielectric constant 와 barrier height를 고려한 다양한 구조의 터널 절연막의 형태가 제안 되었다.[2-3] 특히 낮은 전계에서도 높은 터널링 확률은 메모리 소자의 동작 속도를 향상시킬 수 있다. 본 연구에서는 n형 Si 기판위에 Si3N4 및 HfAlO를 각각 1.5 nm 및 3 nm 로 atomic layer deposition 방법으로 증착하였으며 3~5 nm 지름을 가지는 $TiSi_2$ 및 $WSi_2$ 나노 입자를 형성한 후 컨트롤 절연막인 $SiO_2$를 ultra-high vacuum sputtering을 사용하여 20 nm 두께로 형성 하였다. 마지막으로 $200{\mu}m$ 지름을 가지는 Al 전극을 200 nm 두께로 형성하여 나노 부유 게이트 커패시터를 제작하였다. 제작된 소자는 Agilent E4980A precision LCR meter 및 HP 4156A precision semiconductor parameter analyzer 를 사용하여 전기용량-전압 및 전류-전압 특성분석을 하여 전하저장 특성 및 제작된 소자의 터널링 특성을 확인 하여 본 연구를 통하여 제작된 나노 부유 게이트 커패시터 구조가 메모리 소자응용이 가능함을 확인하였다.

• Journal of Periodontal and Implant Science
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• 제39권2호
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• pp.129-138
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• 2009

Purpose: This study was designed to compare the bond regeneratiom effects of treatment using silk fibroin membrane ( Nanogide-S$^{(R)}$ ) resorbable barrier with control group treated by polyactic acid / polylacticglycolic acid membrane(Biomesh$^{(R)}$ ) Methods: 44 severe bone loss on extraction socket from 44 patients were used in this study. In experimental group 22 sites of them were treated by silk fibrin membrane as and the other 22 sites were treated by polyactic acid/ polylacticglycolic acid membrane as a control group. Clinical parameters including recovered bone width, length and radiographic parameter of vertical length were evlauated at base line and 3 months after surgery. Results: 1) Severe bone width, length was significantlly decreased in two group. 2) Bone width, length was significantlly decreased in two group. 3) Decreased bone width, length and radiographic examination differences between group. Conclusions: On the basis of these results, silk fibrin resorbable membrane has similar bone regeneration ability to polyactic acid / polylacticglycolic acid membrane in guided bone regeneration for severe bone loss defect on extraction socket.

• 한국자기학회지
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• 제20권2호
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• pp.75-82
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• 2010

나노구조 교환결합 삼층박막의 열적안정성을 예측하기 위한 최근의 연구진전에 대하여 리뷰한다. 새로운 해석적/수치적 방법을 이용하여 나노구조 교환결합 삼층박막의 에너지 배리어, 나아가서 열적안정성을 예측한다. 이 방법의 특징은 수치적인 방법을 이용하여 얻은 magnetostatic 자기장을 포함하는 해석적인 전체 에너지 방정식을 이용함에 있다. 단자구라는 가정하에, 모든 magnetostatic 자기장은 자성층 전체 부피에 대해 그 값을 평균함으로써 유효 값을 취할 수 있다. 그러나, 평형상태에서는 자구의 구조가 복잡하며, 또한 불안정한 saddle point에서의 자구 구조를 알 수 있는 직접적인 방법이 없기 때문에, saddle point에서의 magnetostatic 자기장 역시 얻을 수 없다. 이러한 어려움은 micromagnetic simulation을 통해 얻을 수 있는 critical 자기장과 saddle point에서의 magnetostatic 자기장을 연결하는 방정식을 사용함으로써 극복되었다. 이 방법은 신뢰성이 확보된 micromagnetic simulation에 기반을 두고 있기 때문에 열적안정성을 정확하게 예측하는 것이 가능하다.

• 한국재료학회지
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• 제8권2호
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• pp.147-153
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• 1998

$WN_x$ 는 리소그라피 마스크의 흡수체나 VLSI 기술에서 금속연결의 확산방지재로써 주목을 받고 있다. RF마르네트론 스퍼터링법으로 여러 증착변수에서 제조한 $WN_x$ 막을 고찰하였다. $SiN_x$ 멤브레인 위에 증착된 박막의 결정구조는 질소아르곤 가스유량비(0-30%), 가스압력(10-43mTorr), RF출력(0150W)및 기판과 타겟사이의 거리 6cm에서 증착한 $WN_x$ 박막은 비정질이였으며 다른 조건에서는 표면이 거친 다결정질이었다. 비정질 박막은 rms가 $3.1\AA$으로 아주 매끈하여 X-선 마스크용 흡착제로써 적합할 것으로 기대된다.

• Journal of Pharmaceutical Investigation
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• 제19권2호
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• pp.93-98
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• 1989

The study was performed to compare the dissolution, diffusion and absorption characteristics using Sartorius dissolution and absorption simulator and in vivo bioavailability of commercially available rifampicin capsules. Both brands C and F showed similar dissolution patterns and absorption properties through artificial gastric barrier in Sartorius simulator. Diffusion rate constants through the membrane of brands C and F were $3.04\;{\times}40^{-3}$ and $2.88\;{\times}\;10^{-3}cm/min$, respectively. Rifampicin capsules were administered orally to six fasted healthy volunteers according to cross-over design. The pharmacokinetic parameters between brands C and F, maximum plasma drug concentration$(C_{max})$, the time to reach $C_{max}$, absorption rate constant and area under the curve $(AUC_{0-24hr})$, elimination rate constant, and amount of drug excreted in urine were 6.11 and $7.27\;{\mu}g/ml$, 2.71 and 1.52 hr, 0.6371 and $1.6456 hr^{-1}$, 57.84 and $57.28\;{\mu}g\;{\cdot}\;hr/ml$, 0.1891 and $0.1734 hr^{-l}$, 119.98 and 119.93 mg, respectively. On the basis of experimental results, it was concluded that the bioavailability of brand C rifampicin capsules was almost the same as that of brand F rifampicin capsules.

• 대한화학회지
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• 제34권6호
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• pp.509-516
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• 1990

n-알코올 용매에서 아세트아미드(AA)의 아미노 양성자의 nmr 화학적 이동과 선모양을 온도의 함수로 조사 연구하였다. 아미노 양성자의 화학적 이동 변화를 용매의 극성 파라미터 중에서 Reichardt의 $E_{T}$(30)으로 고찰하여 그들 사이에 다음과 같은 관계가 존재함을 밝혔다. ${\delta}_{obs}$ = ${\delta}_{o}$ ＋ aE$_{T} (30) ＋ b[E_{T}(30)]^2$ 여기서 ${\delta}_{o}$는 용질의 기체 상태 또는 $E_{T}$(30)가 0인 상태에서의 용질의 화학적 이동이며, a는 알코올 용액에서 용질이 갖는 고유한 특성이며, b는 용질-용매의 상호작용을 나타내는 상수이다. 또한, 선모양의 분석에서 얻은 N-C(O) 결합 주위로의 부자유회전 장애도 아미노 양성자에 대한 화학적 이동의 행동과 유사하게 용매의 $E_{T}$(30)과 밀접한 관계가 있음을 알아 내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.22-28
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• 2009

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

• ETRI Journal
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• 제21권1호
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• pp.1-27
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• 1999

We present a new description of envelope-function equation of the superlattice (SL). The SL wave function and corresponding effective-mass equation are formulated in terms of a linear combination of Bloch states of the constituent material with smaller band gap. In this envelope-function formalism, we review the fundamental concept on the motion of a wave packet in the SL structure subjected to steady and uniform electric fields F. The review confirms that the average of SL crystal momentums K = ($k_x,k_y,q$), where ($K_x,k_y$) are bulk inplane wave vectors and q SL wave vector, included in a wave packet satisfies the equation of motion = $_0+Ft/h$; and that the velocity and acceleration theorems provide the same type of group velocity and definition of the effective mass tensor, respectively, as in the Bulk. Finally, Schlosser and Marcus's method for the band theory of metals has been by Altarelli to include the interface-matching condition in the variational calculation for the SL structure in the multi-band envelope-function approximation. We re-examine this procedure more thoroughly and present variational equations in both general and reduced forms for SLs, which agrees in form with the proposed envelope-function formalism. As an illustration of the application of the present work and also for a brief investigation of effects of band-parameter difference on the subband energy structure, we calculate by the proposed variational method energies of non-strained $GaAs/Al_{0.32}Ga_{0.68}As$ and strained $In_{0.63}Ga_{0.37}As/In_{0.73}Ga_{0.27}As_{0.58}P_{0.42}SLs$ with well/barrier widths of $60{\AA}/500{\AA}$ and 30${\AA}/30{\AA}$, respectively.