• 전기화학회지
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• 제13권4호
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• pp.290-294
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• 2010

본 연구는 밀도 범함수 이론을 이용하여 Li이온전지에 사용되는 Li코발트 산화물에서의 Li이온 삽입 전압과 전도에 관한 것이다. Li이온은 Li코발트 산화물 원자구조의 각 층을 1개씩 채우거나 한 층을 다 채우고 다음 층을 채울 수 있다. 평균 삽입 전압은 3.48V로 동일하나, 전자가 후자보다 더 유리하였다. 격자상수 c는 Li농도가 0.25보다 작을 때는 증가하였으나, 0.25보다 클 때는 감소하였다. Li농도가 증가하면, Li코발트 산화물에서의 Li이온 전도를 위한 에너지 장벽은 증가하였다. Li이온전지가 방전 중 출력 전압이 낮아지는 현상은 Li농도 증가에 따른 삽입 전압의 감소와 전도 에너지 장벽의 증가로 설명할 수 있었다.

• 한국전자파학회논문지
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• 제27권3호
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• pp.246-252
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• 2016

본 논문에서는 유전체 장벽 방전(dielectric barrier discharge: DBD) 플라즈마에 의한 monostatic RCS 감소 특성을 측정하였다. Monostatic 레이다 단면적(radar cross section: RCS) 교정을 위하여 서로 다른 크기의 금속 평판을 사용하여 산란계수(scattering parameter)를 측정하였고, 그 결과 0.4 dB 이내의 오차를 보였다. DBD 플라즈마에 의한 monostatic RCS 감소 특성을 측정하기 위해 DBD 플라즈마 발생기 뒤에 금속 평판을 배치하였다. 금속 평판과 플라즈마 발생기 사이에 아크 방전(arc dischrage)이 일어나는 것을 방지하기 위해 금속 평판과 DBD 플라즈마 사이의 간격을 띄워 측정을 진행하였다. 그 결과 7.4 GHz에서 monostatic RCS가 최대 약 3 dB 감소하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 대한토목학회논문집
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• 제41권2호
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• pp.123-131
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• 2021

완충재는 고준위 방사성 폐기물을 처분하기 위한 공학적 방벽 시스템에서 중요한 구성요소 중 하나이며 사용 후 핵연료가 담긴 처분용기와 암반사이에 채워지는 물질이기 때문에 지하수 유입으로부터 처분용기를 보호하고, 방사성 핵종 유출을 저지하는 중요한 역할을 수행한다. 따라서 공학적 방벽 시스템의 처분용기로부터 발생하는 고온의 열량은 완충재를 통하여 전파되기에 완충재의 열전도도는 처분시스템의 안전성 평가에 매우 중요하다. 본 연구에서는 국내에서 생산되는 압축 벤토나이트 완충재의 열전도도 예측을 위한 경험적 회귀 모델의 정합성을 검증하고 정확도를 높이기 위해 예측모델의 구축에 기계학습법을 적용해 보았다. 벤토나이트의 건조밀도, 함수비 및 온도 값을 바탕으로 열전도도를 예측하고자 하였으며, 이때 다항 회귀, 결정 트리, 서포트 벡터 머신, 앙상블, 가우시안 프로세스 회귀, 인공신경망, 심층 신뢰 신경망, 유전 프로그래밍과 같은 기계학습 기법을 적용하였다. 기계학습 기법을 이용하여 예측한 결과, 부스팅 기반의 앙상블 기법, 유전 프로그래밍, 3차 함수 기반의 SVM, 가우시안 프로세스 회귀의 기계학습기법을 활용한 모델이 선형 회귀 분석 기법에 비해 좋은 성능을 보였으며, 특히 앙상블의 부스팅 기법과 가우시안 프로세스 회귀 기법을 사용한 모델들이 가장 좋은 성능을 보였다.

• Composites Research
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• 제30권2호
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• pp.84-93
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• 2017

본 논문에서는 탄화규소 섬유강화 탄화규소 복합재료에 내환경 코팅을 수행한 후, 열 기계적 특성평가에 대한 연구를 수행하였다. 초기분말은 성형공정도중 흐름성을 좋게 하기 위해 분무건조법으로 구형의 분말을 제조하였다. 내환경 코팅재는 복합재료가 산화되거나 고온 수증기와 반응하는 것을 방지하기 위해 행하여 지는데, 본 연구에서는 액상침투법(LSI)으로 제조한 복합재에 실리콘으로 본드코팅을 하고 그 위에 대기플라즈마용사법으로 뮬라이트(mullite)와 무게비로 12% 이터븀 실리케이트(ytterbium silicate)가 혼합된 복합재를 코팅하였다. 대기플라즈마 코팅공정 시 성형변수로서 분무거리를 100, 120 그리고 140 mm로 변화시켰다. 그 후 $1100^{\circ}C$의 온도에서 100시간동안 유지하는 실험과 $1200^{\circ}C$의 온도에서 열충격을 가하는 싸이클을 3000회 반복하였다. 열내구성 시험동안 계면 박리는 일어나지 않았지만, 현저한 균열들이 코팅층 내에서 발견되었다. 균열밀도와 균열의 길이는 코팅도중의 분무거리에 의존하여 변화하였다. 열 내구성 시험 후, 압흔 시험을 통해 기계적 열화거동을 분석하였는데, 시험의 방식이나 조건들이 하중-변위 곡선의 거동에 영향을 주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• 한국농공학회논문집
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• 제57권4호
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• pp.121-133
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• 2015

The TANK model has been widely used in rainfall-runoff modeling due to its simplicity of concept and computation while achieving forecast accuracy. A major barrier to the model application is to determine parameter values for ungauged watersheds, leading to the need of a method for the parameter estimation. The objective of this study was to develop regression equations for estimating the 3th TANK model parameters considering their variations for the ungauged watersheds. Thirty watersheds of dam sites and stream stations were selected for this study. A genetic algorithm was used to optimize TANK model parameters. Watershed characteristics used in this study include land use percent, watershed area, watershed length, and watershed average slope. Generalized equations were derived by correlating to the optimized parameters and the watershed characteristics. The results showed that the TANK model, with the parameters determined by the developed regression equations, performed reasonably with 0.60 to 0.85 of Nash-Sutcliffe efficiency for daily runoff. The developed regression equations for the TANK model can be applied for the runoff simulation particularly for the ungauged watersheds, which is common for upstream of agricultural reservoirs in Korea.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

• Journal of Radiation Protection and Research
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• 제16권1호
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• pp.53-72
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• 1991

An integrated model is developed in this paper for the performance assessment of high level radioactive waste repository. This integrated model consists of two simple mathematical models. One is a multiple-barrier failure model of the repository system based on constant failure rates which provides source terms to biosphere. The other is a biosphere model which has multiple pathways for radionuclides to reach to human. For the parametric uncertainty and sensitivity analysis for the risk assessment of high level radioactive waste repository, Latin hypercube sampling and rank correlation techniques are applied to this model. The former is cost-effective for large computer programs because it gives smaller error in estimating output distribution even with smaller number of runs compared to crude Monte Carlo technique. The latter is good for generating dependence structure among samples of input parameters. It is also used to find out the most sensitive, or important, parameter groups among given input parameters. The methodology of the mathematical modelling with statistical analysis will provide useful insights to the decision-making of radioactive waste repository selection and future researches related to uncertain and sensitive input parameters.

• 한국정밀공학회지
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• 제30권5호
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• pp.552-558
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• 2013

In recent years the interest on flexible display has been increasing as a future display due to its bendable characteristics. An ITO(indium tin oxide) layer, which is part of a flexible display, can be broken easily while bending because it is made of brittle materials. This brittle property can cause the malfunction of flexible display. To analyze fracture characteristics of ITO layer, bending test was conducted commonly. However, it is not possible to know specific phenomena on bended ITO layer by simple bending test only. Accordingly, in this study, the FE(finite element) model is developed similarly to a real flexible display to analyze stress distribution of flexible display under bending condition, especially on ITO layer. To validate FE model, actual bending test was conducted and the test results were compared with the simulation results by measuring reaction forces during bending. By using the developed model, FE analysis about the effect of design parameter (Thickness & Young's Modulus of BL) on ITO Layer was performed. By explained FE analysis above, this research draws a conclusion of reliable design guide of flexible display, especially on ITO layer.