• 한국분말재료학회지
• /
• 제24권6호
• /
• pp.437-443
• /
• 2017

SiC-based composite materials with light weight, high durability, and high-temperature stability have been actively studied for use in aerospace and defense applications. Moreover, environmental barrier coating (EBC) technologies using oxide-based ceramic materials have been studied to prevent chemical deterioration at a high temperature of $1300^{\circ}C$ or higher. In this study, an ytterbium silicate material, which has recently been actively studied as an environmental barrier coating because of its high-temperature chemical stability, is fabricated on a sintered SiC substrate. $Yb_2O_3$ and $SiO_2$ are used as the raw starting materials to form ytterbium disilicate ($Yb_2Si_2O_7$). Suspension plasma spraying is applied as the coating method. The effect of the mixing method on the particle size and distribution, which affect the coating formation behavior, is investigated using a scanning electron microscope (SEM), an energy dispersive spectrometer (EDS), and X-ray diffraction (XRD) analysis. It is found that the originally designed compounds are not effectively formed because of the refinement and vaporization of the raw material particles, i.e., $SiO_2$, and the formation of a porous coating structure. By changing the coating parameters such as the deposition distance, it is found that a denser coating structure can be formed at a closer deposition distance.

• Journal of information and communication convergence engineering
• /
• 제9권6호
• /
• pp.738-742
• /
• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• 한국공작기계학회논문집
• /
• 제10권1호
• /
• pp.51-58
• /
• 2001

The use of tailor welded blanks (TWB) in automotive applications is increasing due to the potential of weight and cost saving. The object of this study is development of the front side member by static analysis and crash simulations. Accord-ing to the results , energy absorption and barrier force is very important parameter to control passenger safety and deforma-tion shape. A energy absorbability point of view, tailor welded blanks is most effective to absorb energy than non-twb. Non-TWB front side member and TWB applied front side member were simulated. It shows reduce stmping parts weight reduction and cost down.

• 천문학회보
• /
• 제42권1호
• /
• pp.31.1-31.1
• /
• 2017

Spiral structure in disk galaxies is modeled with ncollisionless N-body simulations including live disks, halos, and bulges with a range of masses. Two of these simulations make long-lasting and strong two-arm spiral wave modes that last for about 5 Gyr with constant pattern speed. These two had a light stellar disk and the largest values of the Toomre Q parameter in the inner region at the time the spirals formed, suggesting the presence of a Q-barrier to wave propagation resulting from the bulge. The relative bulge mass in these cases is about 10%. Models with weak two-arm spirals had pattern speeds that followed the radial dependence of the Inner Lindblad Resonance. In addition to these, we also report a few more cases where two-armed spirals are developed and are maintained for a several rotation time scales.

• Journal of applied mathematics & informatics
• /
• 제27권5_6호
• /
• pp.981-1000
• /
• 2009

This paper considers asset liability management problems when their deterministic equivalent formulations are general nonlinear optimization problems. The presented approach uses a nonmonotone trust region strategy for solving a sequence of unconstrained subproblems parameterized by a scalar parameter. The objective function of each unconstrained subproblem is an augmented penalty-barrier function that involves both primal and dual variables. Each subproblem is solved approximately. The algorithm does not restrict a monotonic decrease of the objective function value at each iteration. If a trial step is not accepted, the algorithm performs a non monotone line search to find a new acceptable point instead of resolving the subproblem. We prove that the algorithm globally converges to a point satisfying the second-order necessary optimality conditions.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1990년도 하계학술대회 논문집
• /
• pp.261-264
• /
• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 A
• /
• pp.300-302
• /
• 1997

Synchronous Reluctance Motors(SynRM) with multiple flux barrier structures are considered in this paper. Since the stator of a SynRM is similar as that of an inductin motor, attention is focused here on the rotor structure. We have designed the parameter of SynRM and analyzed the characteristics of the electromagnetic energy conversion.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권3호
• /
• pp.225-230
• /
• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.212-212
• /
• 2010

최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• 대한전자공학회논문지
• /
• 제23권6호
• /
• pp.868-873
• /
• 1986

The Schottky barrier diode has been used as an element of the mixer inspite of its conversion loss. In this paper the use of a GaAs MESFET is shown as a device of mixer, and the conversion gain is obtained. Also, input matching circuits aredesigned by s-parameter and fabricated on a dielectric teflon epoxy fiber glass substrate. According to the results, the conversion gain is 9 dB at the signal frequency of 4 GHz and the intermediate frequency of 1.217GHz.