• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.279-279
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• 2011

나노 입자를 이용한 비휘발성 메모리 소자의 전기적 특성 향상을 위하여 일함수가 Si 보다 큰 금속, 금속산화물, 금속 실리사이드 나노입자를 이용한 다양한 형태의 메모리 구조가 제안되어져 왔다.[1] 특히 이와 같은 나노 부유 게이트 구조에서 터널 절연막의 구조를 소자의 동작 속도를 결정하는데 이는 터널링 되어 주입되는 전자의 확률에 의존하기 때문이다. 양자 우물에 국한된 전하가 누설되지 않으면서 주입되는 전자의 터널링 확률을 증가시키기 위하여, dielectric constant 와 barrier height를 고려한 다양한 구조의 터널 절연막의 형태가 제안 되었다.[2-3] 특히 낮은 전계에서도 높은 터널링 확률은 메모리 소자의 동작 속도를 향상시킬 수 있다. 본 연구에서는 n형 Si 기판위에 Si3N4 및 HfAlO를 각각 1.5 nm 및 3 nm 로 atomic layer deposition 방법으로 증착하였으며 3~5 nm 지름을 가지는 $TiSi_2$ 및 $WSi_2$ 나노 입자를 형성한 후 컨트롤 절연막인 $SiO_2$를 ultra-high vacuum sputtering을 사용하여 20 nm 두께로 형성 하였다. 마지막으로 $200{\mu}m$ 지름을 가지는 Al 전극을 200 nm 두께로 형성하여 나노 부유 게이트 커패시터를 제작하였다. 제작된 소자는 Agilent E4980A precision LCR meter 및 HP 4156A precision semiconductor parameter analyzer 를 사용하여 전기용량-전압 및 전류-전압 특성분석을 하여 전하저장 특성 및 제작된 소자의 터널링 특성을 확인 하여 본 연구를 통하여 제작된 나노 부유 게이트 커패시터 구조가 메모리 소자응용이 가능함을 확인하였다.

• Journal of Periodontal and Implant Science
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• v.39 no.2
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• pp.129-138
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• 2009

Purpose: This study was designed to compare the bond regeneratiom effects of treatment using silk fibroin membrane ( Nanogide-S$^{(R)}$ ) resorbable barrier with control group treated by polyactic acid / polylacticglycolic acid membrane(Biomesh$^{(R)}$ ) Methods: 44 severe bone loss on extraction socket from 44 patients were used in this study. In experimental group 22 sites of them were treated by silk fibrin membrane as and the other 22 sites were treated by polyactic acid/ polylacticglycolic acid membrane as a control group. Clinical parameters including recovered bone width, length and radiographic parameter of vertical length were evlauated at base line and 3 months after surgery. Results: 1) Severe bone width, length was significantlly decreased in two group. 2) Bone width, length was significantlly decreased in two group. 3) Decreased bone width, length and radiographic examination differences between group. Conclusions: On the basis of these results, silk fibrin resorbable membrane has similar bone regeneration ability to polyactic acid / polylacticglycolic acid membrane in guided bone regeneration for severe bone loss defect on extraction socket.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.75-82
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• 2010

A recent progress on the prediction of the thermal stability of a nanostructured exchange-coupled trilayer is reviewed. An analytical/numerical combined method is used to calculate its magnetic energy barrier and hence the thermal stability parameter. An important feature of the method is the use of an analytical equation for the total energy that contains the magnetostatic fields. Under an assumption of the single domain state, the effective values of all the magnetostatic fields can be obtained by averaging their nonuniform values over the entire magnetic volume. In an equilibrium state, however, it is not easy to calculate the magnetostatic fields at the saddle point due to the absence of suitable methods of the accessing its magnetic configuration. This difficulty is overcome with the use of equations that link the magnetostatic fields at the saddle point and critical fields. Since the critical fields can readily be obtained by micromagnetic simulation, the present method should provide accurate results for the thermal stability of a nanostructured exchange-coupled trilayer.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.147-153
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• 1998

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

• Journal of Pharmaceutical Investigation
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• v.19 no.2
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• pp.93-98
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• 1989

The study was performed to compare the dissolution, diffusion and absorption characteristics using Sartorius dissolution and absorption simulator and in vivo bioavailability of commercially available rifampicin capsules. Both brands C and F showed similar dissolution patterns and absorption properties through artificial gastric barrier in Sartorius simulator. Diffusion rate constants through the membrane of brands C and F were $3.04\;{\times}40^{-3}$ and $2.88\;{\times}\;10^{-3}cm/min$, respectively. Rifampicin capsules were administered orally to six fasted healthy volunteers according to cross-over design. The pharmacokinetic parameters between brands C and F, maximum plasma drug concentration$(C_{max})$, the time to reach $C_{max}$, absorption rate constant and area under the curve $(AUC_{0-24hr})$, elimination rate constant, and amount of drug excreted in urine were 6.11 and $7.27\;{\mu}g/ml$, 2.71 and 1.52 hr, 0.6371 and $1.6456 hr^{-1}$, 57.84 and $57.28\;{\mu}g\;{\cdot}\;hr/ml$, 0.1891 and $0.1734 hr^{-l}$, 119.98 and 119.93 mg, respectively. On the basis of experimental results, it was concluded that the bioavailability of brand C rifampicin capsules was almost the same as that of brand F rifampicin capsules.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.509-516
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• 1990

1H-nmr chemical shifts and lineshapes of amino-protons of acetamide (AA) in n-alcohols were determined. The chemical shifts are discussed by the Reichardt's solvent polarity parameter, E$_{T}$(30). The following relationship between $\delta$obs and E$_{T}$(30) was obtained. ${\delta}_{obs}$ = ${\delta}_{o}$ ＋ aE$_{T}$ (30) ＋ b[E$_{T}$(30)]$^2$ where ${\delta}_{o}$ is the chemical shift of the solute in gaseous state or at $E_{T}$(30) = 0, a is a characteristic constant for the protons of AA in n-alcohol solutions and b is a constant for the solute (AA)-solvent (n-alcohols) interaction. The barrier of the hindered rotation about the N-C(O) bond in AA was obtained by analysis of the lineshapes of the amino-protons in AA. The behavior of the internal rotation as well as chemical shifts of the amino-protons in AA has been found to be closely related to the $E_{T}$(30) of n-alcohols.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.22-28
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• 2009

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

• ETRI Journal
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• v.21 no.1
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• pp.1-27
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• 1999

We present a new description of envelope-function equation of the superlattice (SL). The SL wave function and corresponding effective-mass equation are formulated in terms of a linear combination of Bloch states of the constituent material with smaller band gap. In this envelope-function formalism, we review the fundamental concept on the motion of a wave packet in the SL structure subjected to steady and uniform electric fields F. The review confirms that the average of SL crystal momentums K = ($k_x,k_y,q$), where ($K_x,k_y$) are bulk inplane wave vectors and q SL wave vector, included in a wave packet satisfies the equation of motion = $_0+Ft/h$; and that the velocity and acceleration theorems provide the same type of group velocity and definition of the effective mass tensor, respectively, as in the Bulk. Finally, Schlosser and Marcus's method for the band theory of metals has been by Altarelli to include the interface-matching condition in the variational calculation for the SL structure in the multi-band envelope-function approximation. We re-examine this procedure more thoroughly and present variational equations in both general and reduced forms for SLs, which agrees in form with the proposed envelope-function formalism. As an illustration of the application of the present work and also for a brief investigation of effects of band-parameter difference on the subband energy structure, we calculate by the proposed variational method energies of non-strained $GaAs/Al_{0.32}Ga_{0.68}As$ and strained $In_{0.63}Ga_{0.37}As/In_{0.73}Ga_{0.27}As_{0.58}P_{0.42}SLs$ with well/barrier widths of $60{\AA}/500{\AA}$ and 30${\AA}/30{\AA}$, respectively.