• Title/Summary/Keyword: bandgap

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Luminescent Properties of SrTiO3:Al1Pr Phosphors doped with Er and Y (Er과 Y을 첨가한 SrTiO3:Al1Pr 형광체의 발광특성)

  • Park Chang-Sub;Lee Jong-Baek;You Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.971-975
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    • 2006
  • [ $SrTiO_3:Al,Pr$ ] red phosphors doped with Y and Er were synthesized by solid state reaction method. The luminescence properties of $SrTiO_3:Al,Pr$ phosphors before and after doping were examined by photoluminescence. Efforts were paid to elucidate the cause of the increase of green luminescence in $(Sr_{0.95}Y_{0.05})TiO_3:Pr,Er\;and\;(Sr_{0.95}Y_{0.05})TiO_3:Pr,Al$ phosphors. The enhanced green luminescence was interpreted by the energy transfer between $Er^{3+}\;and\;Pr^{3+}$ ions, and the change of bandgap in the $(Sr_{0.95}Y_{0.05})TiO_3:Pr$ phosphors.

Intergrated circuit design of power-stabilizing circuitry for optical transmitter (광송신기용 광파워 안정화 회로의 집적회로 설계)

  • 이성철;박기현;정행근
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.3
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    • pp.47-55
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    • 1996
  • An optical transmitter, which is a key component of the optical transmission system, converts the electrical signal to optical signal and consists of a high-speed current-pulse driver for laser diode and low-speed feedback loops that stabilize optical power against aging, power supply voltage fluctuations, and ambient temperature changes. In this paper, the power-stabilizing part, which forms the bulk of the optical transmitter circuitry was designed in integrted circuits. Operational amplifiers and reference voltage generation circuits, which were identified as key building blocks for the power-stabilizing feedback loops, were designed and were subsequently verified through HSPICE simulations. The designed operational amplifier consists of a two-stage folded cascode amplifier and class AB output stage, whereas the reference voltage is obtained by bandgap reference circuits. Finally the power-stabilizing circuitry was laid out based on 3\mu$m CMOS design rules for fabrication.

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CMOS on-chip voltage and current reference circuits for low-voltage applications (저전압용 CMOS 온-칩 기준 전압 및 전류 회로)

  • 김민정;이승훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.4
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    • pp.1-15
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    • 1997
  • This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.

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A Novel Oscillator Utilizing Corrugated CPW EBG Structure with Reduced Phase Noise and Improved Harmonic Characteristics (Corrugated CPW EBG 구조를 이용한 낮은 위상잡음과 향상된 고조파 특성을 갖는 새로운 형태의 발진기)

  • Hwang, Cheol-Gyu;Myung, Noh-Hoon
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2005.11a
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    • pp.101-106
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    • 2005
  • This paper presents a new microwave oscillator incorporating a corrugated coplanar waveguide (CCPW) electromagnetic bandgap (EBG) structure as its terminating resonance component. The use of a compact CCPW EBG structure was effective in reducing the phase noise and improving the harmonic characteristics of the microwave oscillator circuit without additional backside processing and drastic size increment. The fully planar CCPW oscillator oscillating at the frequency of 5.41 GHz showed a phase noise characteristic of -90.7 dBc/Hz at 100kHz offset and a second harmonic suppression of 42.67 dB.

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The study of characteristic III-V compound semiconductor by He-Ne laser (III-V 화합물반도체에서의 He-Ne Laser를 활용한 광 특성 연구)

  • Yu, Jae-Yong;Choi, K.S.;Choi, Son Don
    • Laser Solutions
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    • v.16 no.1
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    • pp.1-4
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    • 2013
  • The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

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Nano stamp fabrication for photonic crystal waveguides (나노 광소자용 나노스탬프 제조공정 연구)

  • Jeong, Myung-Yung;Jung, Une-Teak;Kim, Chang-Seok
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.12 s.177
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    • pp.16-21
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    • 2005
  • Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for the manipulation of light. The existence of a photonic bandgap, a frequency range in which the propagation of light is prevented in all directions, makes photonic crystal very useful in application where the spatial localization of light is required, for example waveguide, beam splitter, and cavity. However, the fabrication of 3 dimensional photonic crystals is still difficult process. A concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air and perforated with two dimensional lattice of hole. The fabrication of Si master with pillar structure using hot embossing process is investigated for two dimensional, low-index-contrast photonic crystal waveguide. From our research we show that the multiple stamp copy process proved to be feasible and useful.

Application of Photocatalytic Decomposition of Methylene Blue on N-doped TiO2 (질소 도핑 TiO2의 Methylene Blue 광분해 제거에의 적용)

  • Baek, Mi-Hwa;Choi, Su-A;Kim, Dong-Su
    • Journal of Korean Society on Water Environment
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    • v.26 no.4
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    • pp.707-712
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    • 2010
  • Nitrogen-doped $TiO_2$ particles have been successfully prepared using titanium tetraisopropoxide as the Ti source and urea as the nitrogen source. As-prepared nitrogen-doped $TiO_2$ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmett-Teller method (BET) and ultraviolet-visible light (UV-vis) absorption spectra techniques. Photocatalytic degradation of Methylene Blue (MB) has been carried out in both solar light (UV-vis) and the visible region (${\lambda}=420nm$). Nitrogen-doped $TiO_2$ exhibits higher activity than the commercial $TiO_2$ photocalyst, particularly under visible-light irradiation because bandgap of nitrogen-doped $TiO_2$ becomes remarkably decreased.

Reorientation of Colloidal Crystalline Domains by a Thinning Meniscus

  • Im, Sang-Hyuk;Park, O-Ok
    • Macromolecular Research
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    • v.12 no.2
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    • pp.189-194
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    • 2004
  • When water is evaporated quickly from a water-based colloidal suspension, colloidal particles protrude from the water surface, distorting it and generating lateral capillary forces between the colloidal particles. The protruded colloidal particles are then assembled into ordered colloidal crystalline domains that float on the water surface on account of their having a lower effective density than water. These colloidal crystal domains then assemble together by lateral capillary force and convective flow; the generated colloidal crystal has grain boundaries. The single domain size of the colloidal crystal could be controlled, to some extent, by changing the rate of water evaporation, but it seems very difficult to fabricate a single crystal over a large area of the water's surface without reorienting each colloidal crystal domain. To reorient such colloidal crystal domains, a glass plate was dipped into the colloidal suspension at a tilted angle because the meniscus (airwaterglass plate interface) is pinned and thinned by further water evaporation. The thinning meniscus generated a shear force and reoriented the colloidal crystalline domains into a single domain.

Multi-Channel LED Driver IC Design for Variable Message Sign (가변 안내 표지판용 멀티-채널 LED Driver IC 설계)

  • Jung, Hyo-Bin;Lim, Se-Mi;Park, Hee-Jeong;Kim, Hyeong-Seok;Park, Jun-Seok
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1650-1651
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    • 2011
  • 본 논문에서는 가변안내표지판(VMS)용 멀티-채널 LED Driver IC를 설계 연구 하였다. 설계한 LED Driver IC의 채널 수는 96 채널을 기본으로 하여 여분의 64채널을 추가로 구성하였다. VDD는 동작 환경에 따라 사용할 수 있게 12V, 6V, 3.3V로 구성하였다. 각 채널당 전류는 20mA로 일정한 전류가 흐를 수 있도록 하였다. 온도 변화에 따른 전류 변화로 인한 LED 휘도특성 변화를 줄이기 위해 트랜지스터를 여러단으로 쌓아 회로를 구성하였으며 내부 회로에 PTAT과 Bandgap Reference를 이용하여 트랜지스터에 안정적인 전원이 공급될 수 있게 구성하였다. 본 논문에 사용된 공정은 동부 0.13um 공정으로 최대 3.3V까지 사용할 수 있지만 12V및 6V에도 사용할 수 있게 트랜스지터를 쌓는 회로를 구성하였다.

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Ru-SiC schottky diode fabrication and characterisation (Ru, SiC 쇼트키 다이오드 제작 및 특성평가)

  • 송인복;김형준;나훈주;김대환;정상용;송호근;엄명윤
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.68-68
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    • 2003
  • SiC는 wide bandgap 물질로서 그 material properties로 인하여, high tmperature, high power, high frequency영역으로의 사용이 기대되는 물질이다. 따라서 SiC에 대한 기본적인 연구와 더불어, 그 소자 제작 및 응용에의 연구가 절실한 시점이다. 이에, SiC 기본적인 소자중 하나인 Schottky diode에 대해 연구하였다. 본 논문은 Schottky contact 물질로써 현재까지 연구가 미비한 Ru을 사용하였다. Ru은 Pt 계열물질로써, 다른 metal에 비하여 열역학적으로 안정하며, 또한 그의 산소 화합물인 RuO2는 다른 oxide에 비하여 전도성 이 높은 장점을 가지고 있다. 따라서 Ru-SiC diode는 이러한 측면에서 연구할 만한 가치가 있다.

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