• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.281-286
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• 2010

Thickness effects on the structural and optical properties of ZnO thin films fabricated by spin coating method have been carried out. With increase in the thickness of the ZnO thin films, the width and density of striation shape are increased. The ZnO thin film with thickness of 450 nm has a smooth surface morphology. For the ZnO thin film with a smooth surface, orientation factor ${\alpha}_{(002)}$ is sharply increased and FWHM of (002) diffraction peak is decreased compared to the ZnO thin films with a striation shape surface. Thickness and surface morphology of the ZnO thin films hardly affect the NBE peak position. However, the DLE peak position is blue-shifted as the surface morphology is changed from striation to smooth surface. The PL intensity ratio of the NBE to DLE is increased and the FWHM of NBE peak is decreased as the thickness of the ZnO thin films is increased.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.11A
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• pp.1076-1084
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• 2006

In this paper, we first review a concept of hybrid division duplexing (HDD) scheme, which has been proposed as a new type of duplexing scheme useful for a next generation mobile communication system and its implementation issues, including the unified radio resource management for HDD scheme. The HDD scheme maintains the advantages of both TDD and FDD at the same time while providing a useful structure to control the inter-cell interference, caused by an asymmetric traffic load of multimedia services over uplink and downlink in the TDD scheme. Employing two frequency bands, one for TDD scheme and the other for FDD scheme, uplink is operating under the TDD scheme only, while downlink is operating under the TDD or FDD scheme, depending on the location of mobile station. In the HDD scheme, therefore, it must determine a type of duplexing scheme to employ in the downlink and futhermore, a ratio of uplink and downlink duration to meet a given traffic load of asymmetric service, which requires some unified radio resource management for handling the subsequent inter-cell interference. In this paper, we propose a distributed adaptive control approach as a means of unified radio resource management for a HDD system that maximizes the overall system efficiency by fully utilizing the resource in TDD band, while minimizing the inter-cell interference.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.3
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• pp.222-229
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• 2009

In this paper, we designed and fabricated the EM wave absorbers for preventing the reduction of the communication range when RFID Tag is approached to a metal plate. The EM wave absorber samples were fabricated with difference composition ratios of Amorphous metal powder and CPE, the absorption abilities of which were simulated by substituting different thicknesses of the EM wave absorbers. Then the EM wave absorbers are manufactured based on the simulated results. By using the EM wave absorbers, we have confirmed the improvement effect of RFID tag antenna and the increase of communication range of RFID system. As a result, it was cleary shown that the communication range of RFID system is improved by adopting the EM wave absorber with the composition ratio of Amorphous metal powder:CPE=80:20 wt.% and the thickness of 4 mm. Thus, it was confirmed that the proposed EM wave absorber can increase the communication range of RFID system from 0.8 m to 5.2 m in UHF band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

• Journal of the Korean Wood Science and Technology
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• v.42 no.3
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• pp.339-345
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• 2014

For enhancing productivity of glulam, high frequency (HF) curing technique was researched in this study. Heat energy is generated by electromagnetic energy dissipation when HF wave is applied to a dielectric material. Because both lamina and adhesives have dielectric property, internal heat generation would be occurred when HF wave is applied to glulam. Most room temperature setting adhesives such as phenol-resorcinol-formaldehyde (PRF) resin, which is popularly used for manufacturing glulam, can be cured more quickly as temperature of adhesives increases. In this study, dielectric properties of larch wood and PRF adhesives were experimentally evaluated, and the mechanism of HF heating, which induced the fast curing of glue layer in glulam, was theoretically analyzed. Result of our experiments showed relative loss factor of PRF resin, which leads temperature increase, was higher than that of larch wood. Also, it showed density and specific heat of PRF, which are resistance factors of temperature increase, were higher than those of wood. It was expected that the heat generation in PRF resin by HF heating would occur greater than in larch wood, because the ratio of relative loss factor to density and specific heat of PRF resin was greater than that of larch wood. Through theoretical approach with the experimental results, the relative strengths of ISM band HF electric fields to achieve a target heating rate were estimated.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.97-97
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• 2013

Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.5214-5218
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• 2011

In this paper, bandwidth improvement of a series-fed two dipole array(STDA) antenna applicable for mobile communication base station antennas is studied. The proposed STDA antenna consists of two strip dipole antennas with different lengths which are connected directly trough a coplanar stripline(CPS). By adjusting the spacing between the two dipoles and the length of the second dipole, the bandwidth of the STDA can be enhanced. In addition, an integrated balun composed of a short-circuited microstrip line and a slot line is utilized to minimize the area required for a feeding part, and a broadband impedance matching is obtained by adjusting the feeding point. Based on the proposed antenna structure, an STDA antenna covering the frequency band ranging from 1.75 GHz to 2.7 GHz, which includes almost all the existing mobile communication frequency bands, with more than 5 dBi gain is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm, and experimentally tested. The fabricated antenna shows impedance bandwidth of 49%(1.7-2.8 GHz) for VSWR<2, a gain higher than 5.5 dBi, and a front-back ratio better than 12 dB.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.31 no.1
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• pp.132-138
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• 1998

To improve functional properties and enhance application of FPC in food industry, modified salmon FPC with enzyme treatment was produced and its general properties were investigated. Salmon FPC has over $84\%$ of protein and less than $0.18\%$ of lipid. Solubilities of FPC extracted with IPA and ethanol were very poor as less than $3\%$ in every pH range. In case of enzyme : substrate ratio of 1 : 100, degree of hydrolysis significantly increased until 4 hours and then slightly increased. No considerable differences were observed in general components of hydrolysates. Results of SDS-PAGE showed one unique band in each case and their molecular weight was less than 6,500. The flow properties of hydrolysates showed newtonian flow. Whiteness of hydrolysates were higher than that of salmon FPC as $5\~7$. There was no significant differences in the amount of peptide, but that of free amino acid slightly increased from 0.17 to 0.21 mg/ml.