• 제목/요약/키워드: band-gap

검색결과 1,562건 처리시간 0.027초

Multi-Layer 구조를 사용한 다중 대역 내장형 칩 안테나 (Multi-Band Internal Chip Antenna Using Multi-Layer Substrate for Mobile Handset)

  • 조상혁;조일훈;이인영;표성민;백정우;김영식
    • 한국전자파학회논문지
    • /
    • 제19권7호
    • /
    • pp.778-784
    • /
    • 2008
  • 본 논문에서는 다층 구조를 이 용하여 다중 대 역(GSM, DCS, PCS, WCDMA, 2.3 GHz WiMAX)에서 동작하며, 다층 구조이므로 공간 재활용이 가능하여 안테나 크기를 효율적으로 줄일 수 있는 칩 안테나를 제안하였다. 또한, 중간층에 air-gap을 삽입하여 병렬 캐피시턴스 성분을 감소시켜 넓은 대역폭을 얻을 수 있었다. 제안한 안테나는 RO4003 유전체(${\varepsilon}_r=3.4$)를 사용한 다층 구조의 PIFA이고, 안테나 부피는 $22{\times}5.5{\times}4.0\;mm^3$이다. 측정 결과, 안테나 효율 45 % 이상인 대역폭은 low-band에서 80 MHz($880{\sim}960\;MHz$)이며, high-band에서 690 MHz($1,710{\sim}2,400\;MHz$)을 보였으며, 안테나의 고차 모드와 최상위 층의 공진으로 인해 high-band에서 넓은 대역폭을 갖게 되는 것으로 사료된다.

Band Structure Engineering of Monolayer MoS2 by Surface Ligand Functionalization

  • Lee, Sang Yoon;Ramzan, Sufyan
    • EDISON SW 활용 경진대회 논문집
    • /
    • 제4회(2015년)
    • /
    • pp.367-370
    • /
    • 2015
  • Monolayer transition metal dicalcogenide (TMDC) materials are currently attracting extensive attention due to their distinctive electronic, transport, and optical properties. For example, monolayer $MoS_2$ exhibits a direct band gap in the visible frequency range, which makes it an attractive candidate for the photocatalytic water splitting. For the photoelectrochemical water splitting, the appropriate band edge positions that overlap with the water redox potential are necessary. Similarly, appropriate band level alignments will be crucial for the light emitting diode and photovoltaic applications utlizing heterojunctions between two TMDC materials. Carrying out first-principles calculations, we here investigate how the band edges of $MoS_2$ can be adjusted by surface ligand functionalization. This study will provide useful information for the realization of ligand-based band engineering of monolayer $MoS_2$ for various electronic, energy, and bio device applications.

  • PDF

금속-유기 구조체를 이용한 포토닉 크리스탈 기반의 효율적인 습도 컬러 센서 (Efficient Humidity Color Sensor Based on a Photonic Crystal with a Metal-Organic Framework)

  • 김준용;이성학;도윤선
    • 한국광학회지
    • /
    • 제29권6호
    • /
    • pp.268-274
    • /
    • 2018
  • 본 연구에서는 1차원 포토닉 크리스탈과 금속-유기 구조체 (MOF) 물질인 Hong Kong University of Science and Technology(HKUST-1)을 이용한 수분 감지 컬러 센서를 제안한다. 1차원 포토닉 크리스탈은 주기적인 굴절률 변화에 의해 포토닉 밴드갭이 존재하고, 특정한 파장 대역의 광 성분을 차단 및 반사한다. HKUST-1의 굴절률은 건조한 환경과 습한 환경에서 그 값이 서로 다르다. 여기서 우리는 포토닉 밴드갭의 유무를 활용하여 FDTD 시뮬레이션으로 센서를 설계하였다. 광학 해석 결과, 투과된 광의 색 변환보다 반사된 광의 색 변환이 우수하여 반사된 광을 이용하였다. 그리고 포토닉 밴드갭의 중심 파장이 550 nm인 경우, 건조한 환경 대비 습한 환경의 최대 피크 값이 약 9.5배로 증가했으며, 무채색에서 녹색으로 색 변환이 가능하여 센서로의 특성이 우수하였다. 본 연구 결과는 MOF 물질의 수분 감지 컬러 센서로의 활용을 제시하였으며, MOF 물질의 나노 구조 설계로 산업 디바이스로의 활용성도 확대할 것이다.

PZT를 이용한 Air gap 안테나의 공진특성에 관한 연구 (A Study on the Resonant Properties of Air gap Antenna using PZT)

  • 김영훈;조익현;김동현;임승혁;송준태
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
    • /
    • pp.195-198
    • /
    • 1999
  • A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC bias to the microstrip antenna. Air gap antenna with PZT post is fabricated. by using in C-band. In the case of Air gap antenna, the variation of center frequency was about 16Mhz and the bandwidth was increased up to 123.3% at 15dB, 160.7% at 20dB than before applying DC bias respectively. The change property of frequency in air gap antenna is nearly the same the C-V property in PZT.

  • PDF

Characterization of Band Gaps of Silicon Quantum Dots Synthesized by Etching Silicon Nanopowder with Aqueous Hydrofluoric Acid and Nitric Acid

  • Le, Thu-Huong;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
    • /
    • 제35권5호
    • /
    • pp.1523-1528
    • /
    • 2014
  • Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

기판온도에 따른 CdTe박막 특성 (The effect of substrate temperature on the Characteristics of CdTe thin film)

  • 이재형;송우창;박용관
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1995년도 하계학술대회 논문집 C
    • /
    • pp.1178-1180
    • /
    • 1995
  • In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

  • PDF

나노디바이스를 위한 탄소 나노튜브의 유한길이에 따른 전기적 특성 연구 : Tight binding 이론 (A study on Electronic properties of finite length effect in Carbon nanotubes for Carbon Nanoscale device : Tight binding theory)

  • 문원하;강진철;황호정
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
    • /
    • pp.103-106
    • /
    • 2000
  • The electronic properties of carbon nanotube are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in carbon nanotube for cabon nanoscale device is presented. To calculate the electronic properties of carbon nanotube, Empirical potential method (Brenner' hydrocarbon potential) for carbon and Tight binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6, 6) armchair carbon nanotube have the ranges between 0.3 eV and 2.5 eV. Also, our results were compared with the results of the other computational techniques. As that result, our results are very well united.

  • PDF

밴드 갭 현상을 이용한 소음, 진동 차단 (Noise and Vibration Reduction by using the Band Gap Phenomenon)

  • 김현실;김재승;강현주;김봉기;김상렬
    • 한국음향학회:학술대회논문집
    • /
    • 한국음향학회 2000년도 하계학술발표대회 논문집 제19권 1호
    • /
    • pp.287-290
    • /
    • 2000
  • In periodic structures where two or more materials of different density and sound speeds are arranged, there exist stop bands, in which waves cannot propagate. In this paper noise and vibration reduction by using band gap phenomena is discussed. The general theoretical background is presented and experimental results for acoustic wave attenuation in 2D cylinder arrays are described.

  • PDF

SnS (tin monosulfide) thin films obtained by atomic layer deposition (ALD)

  • Hu, Weiguang;Cho, Young Joon;Chang, Hyo Sik
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.305.2-305.2
    • /
    • 2016
  • Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

  • PDF