• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1086-1095
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• 2008

In this paper, we designed and fabricated the trapezoidal antenna using the CPWG structure for Wibro and WLAN communications. This antenna has broadband characteristics using the basic trapezoidal antenna, and an H-shaped parasitic patch is making an expansion of resonance bandwidth and bringing stability of impedance matching. Especially, CPWG structure is combined two kinds of the structure which of a monopole antenna and a coplanar waveguide antenna. They make up for the weak point of the CPW which is variation of impedance matching according to varying the gap or size of the feed line and the ground. The designed antenna has occurred resonances of which the band of 2.2 GHz to 4.6 GHz(70.5 %) below the return loss of -10 dB($VSWR{\leq}2$) obtained in measurement, and it has an omnidirectional radiation pattern of H-plane. In addition, the changes of impedance matching appear slightly caused by the effects of the ground plane and the feed line.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.1-6
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• 2007

Wireless Self-Powered Temperature Sensor for UHF Sensor Tags which are basic device for construction of ubiquitous sensor network is proposed. The key parameters of the target specification are resolution of $0.1\;^{\circ}C$ per output bit, below 1.5 V of operating voltage and below 5 uW of power consumption during sensing operation. Temperature sensor circuit consists of PTAT current generator, band gap reference circuit generating both reference voltage and current, Sigma-Delta Converter, and Digital Counter. Simulated maximum resolution was $0.23\;^{\circ}C/bit$ in 11-bit output. The proposed temperature sensor was fabricated by using a 0.25 m CMOS process. The chip area is $0.32\;{\times}\;0.22\;mm$ and the operating frequency is 2 MHz. Measured resolution from fabricated temperature sensor was $4\;^{\circ}C/bit$ in 8-bit output for the temperature range from $10^{\circ}C$ to $80^{\circ}C$.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.697-702
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• 2011

Two-dimensional (2D) nano patterns including a two-dimensional Bravais lattice were fabricated by laser interference lithography using a two step exposure process. After the first exposure, the substrate itself was rotated by a certain angle, $90^{\circ}$ for a square or rectangular lattice, $75^{\circ}$ for an oblique lattice, and $60^{\circ}$ for a hexagonal lattice, and the $90^{\circ}$ and laser incident angle changed for rectangular and the $45^{\circ}$ and laser incident angle changed for a centered rectangular; we then carried out a second exposure process to form 2D bravais lattices. The band structure of five different 2D nano patterns was simulated by a beam propagation program. The presence of the band-gap effect was shown in an oblique and hexagonal structure. The oblique latticed ZnO nano-photonic crystal array had a pseudo-bandgap at a frequency of 0.337-0.375, 0.575-0.596 and 0.858-0.870. The hexagonal latticed ZnO nano-crystallite array had a pseudo-bandgap at a frequency of 0.335-0.384 and 0.585-0.645. The ZnO nano structure with an oblique and hexagonal structure was grown through the patterned opening window area by a hydrothermal method. The morphology of 2D nano patterns and ZnO nano structures were investigated by atomic force microscopy and scanning electron microscopy. The diameter of the opening window was approximately 250 nm. The height and width of ZnO nano-photonic crystals were 380 nm and 250 nm, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.