• Textile Coloration and Finishing
• /
• v.30 no.3
• /
• pp.190-198
• /
• 2018

We fabricated high transmission and high scattering poly(ethylene-co-vinyl acetate)(EVA) films embedding $SiO_2$ nanoparticles to improve outcoupling efficiency in organic display. The 800nm diameter $SiO_2$ nanoparticles aggregated and formed $1.56{\mu}m$ (with ${\pm}0.853{\mu}m$ standard deviation) diameter microparticles in EVA. The total transmission of scattering film was 83.3% on Polyethylene terephthalate(PET), which was higher than reference 82.8% PET substrate. The diffuse transmission and haze of the $SiO_2$ embedded EVA film were 76.1% and 91.4%, respectively. The optimized condition was 1:1 weight ratio of $SiO_2$ nanoparticles to EVA in Tetrahydrofuran(THF) solution. When the ratio of $SiO_2$ was larger than 1, the total transmission decreased by the increase in backscattering of light due to high scattering. With the optimized condition, we could succeed to fabricate a large scale film(35m in length) with a roll-to-roll process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.304.2-304.2
• /
• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.4
• /
• pp.541-550
• /
• 2012

An improved method of moments using a hybrid Galerkin-interpolation technique for numerical analysis of electromagnetic wave scattering in the 3-dimensional space is presented in this paper. Basically, the EFIE(electric field integral equation) and RWG(Rao-Wilton-Glisson) basis function are used to compute a property of electromagnetic wave scattering. We propose a hybrid technique combining the existing Galerkin's method with the interpolation method to improve the efficiency of the numerical computation. Then, an index of relative distance of each cells was defined to distinguish the relatively far elements, which interpolation method can be applied. To verify the performance of the proposed technique, the analytical Mie-series solution was used to compute the theoretical RCS of a conducting sphere for the purpose of comparison. We also applied this hybrid technique to various scatterers such as trihedral/omni-directional corner-reflectors to analyze the radar backscattering properties.

• The Journal of Engineering Geology
• /
• v.32 no.3
• /
• pp.363-376
• /
• 2022

An area under construction for a living facility collapsed around 12:48 KST on 13 January 2021 in Sa-dong, Ansan-si, Gyeonggi-do. There were no casualties due to the rapid evacuation measure, but part of the temporary retaining facility collapsed, and several cracks occurred in the adjacent road on the south side. This study used the potential of synthetic aperture radar (SAR) satellite for surface property changes that lies in backscattering characteristic to map the collapsed structure. The interferometric SAR technique can make a direct measurement of the decorrelation among different acquisition dates by integrating both amplitude and phase information. The damage proxy map (DPM) technique has been employed using four high-resolution Constellation of Small Satellites for Mediterranean basin Observation (COSMO-SkyMed) data spanning from 2020 to 2021 during ascending observation to analyze the collapse of the construction. DPM relies on the difference of pre- and co-event interferometric coherences to depict anomalous changes that indicate collapsed structure in the study area. The DPMs were displayed in a color scale that indicates an increasingly more significant ground surface change in the area covered by the pixels, depicting the collapsed structure. Therefore, the DPM technique with SAR data can be used for damage assessment with accurate and comprehensive detection after an event. In addition, we classify the amplitude information using support vector machine (SVM) and maximum likelihood classification algorithms. An investigation committee was formed to determine the cause of the collapse of the retaining wall and to suggest technical and institutional measures and alternatives to prevent similar incidents from reoccurring. The report from the committee revealed that the incident was caused by a combination of factors that were not carried out properly.

• Journal of the Korean Vacuum Society
• /
• v.22 no.4
• /
• pp.188-192
• /
• 2013

Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.