• 한국세라믹학회지
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• 제28권8호
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• pp.603-610
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• 1991

An oxygen deficient perovskite (CaLa)(MgMn)O5.43, with the cubic unit cell parameter of 3.826$\AA$, was prepared 115$0^{\circ}C$ for 10 hrs under the ambient oxygen gas pressure. The average oxidation state of manganese was determined to be 3.86 by the iodometric titration, so that the perovskite could be formulated as (CaLa) ({{{{ { MgMn}`_{ chi } ^{II } }}{{{{ { Mn}`_{ y} ^{III } }}{{{{ { Mn}`_{1- chi -y } ^{IV } }})O5.43 (2x+y=0.14). From X-ray photoelectron spectroscopy, the manganese ions in the lattice are mostly tetravalent, but two paramagnetic configurations were observed in the EPR spectrum: One sharp isotropic signal with hyperfines (ΔH 50 G, g=1.997$\pm$0.002 and │A│=82(4)$\times$10-4 cm-1) and a broad isotropic one (ΔH 1600 G, g=1.994$\pm$0.002), those which correspond respectively to Mn(II) and Mn(IV) ions. According to the magnetic susceptibility measurement, it follows the Curie-Weiss law from 20 K up to room temperature with $\mu$eff=5.23 $\mu$B, which is relatively larger than spin-only value({{{{ { mu }`_{eff} ^{s.o } }}=4.04 $\mu$B) due to the effect of weak ferromagnetic coupling. Such a result is in accord with a theory of semicovalence exchange.

• 한국재료학회지
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• 제2권5호
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• pp.375-382
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• 1992

Composite target(MoS$i_{2.3}$)으로 부터 Mo-silicide를 형성시, 단결정 실리콘 위에 P, B$F_2$불순물(5${\times}10^{15}ions/cm^2$)과 다결정 실리콘 위에 P 불순물(5${\times}10^{15}ions/cm^2$)을 이온 주입하여 아르곤 분위기에서 급속열처리(RTA)하였다. 열처리는 600-120$0^{\circ}C$ 온도구간에서 20초간 행하였다. Mo-silicide의 특성 및 불순물의 거동은 4-point probe, X선 회절분석, SEM, SIMS, $\alpha$-step을 통해 조사하였다. 80$0^{\circ}C$에서 부터 MoS$i_2가 형성되며 열처리 온도가 증가할수록 낮은 비저항간을 갖는 안정한 MoS$i_2로 결정화가 이루어진다. 또한 열처리 동안 단결정 실리콘과 다결정 실리콘에서 Mo-silicide층으로 불순물의 내부 확산은 거의 발생하지 않았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제9회 학술발표회 논문개요집
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• pp.151-151
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Z Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120 ke V to a total do range of 1xHP ions/cm2 to 8xlO17 ions/cm2 at various temperatures of 298"C to 676"C. The m microstructure changes by nitrogen implantation were analyzed by using TEM, XRD 뻐d A AES, cmd then wear behavior was evaluated by ball-on-disc wear testings at various loads a and sliding velocity under unlubricated condition. Nitrogen implantation produced ZrNx nitride above 4.37x1017 ions!cm2 as well as heavy d dislocations, which enhanced microhardness of the implanted surface of up to 900 Hk from 2 200 Hk of unimplanted substrate. Hardness was also found to be increased with increasing i implantation temperature and enhanced up to OOOHk at 620 "C. the wear resistance was g greatly improved with increasing total ion do않 as well as implantation temperature. The effective enhancement of wear resistance at high dose and tem야ratures is believed d due to significant hardening associated with high degree of precipitation of Zr nitrides and g generation of prismatic dislocation I$\infty$ps.infty$ps.

• 한국자기학회지
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• 제10권1호
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• pp.16-21
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• 2000

Spin-Peierls(SP) 전이 현상을 나타내는 $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$를 제조하여 자기적 특성과 결정학적 특성을 알기 위하여 x선 회절, 자기감수율과 Mossbauer 스펙트럼을 측정 분석하였다. 결정구조는 직방정계(orthorhombic)였고 격자 상수는 a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$이며, SP 전이 온도($T_{sp}$)는 13 K임을 알아냈다. 상온에서 Mossbauer 스펙트럼은 $Fe^{3+}$ 이온에 의한 두 개의 Zeeman선과 한 개의 이중선이 중첩되어 나타났다. Ge 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbauer스펙트럼은 Zeeman 선을 나타내고, Cu 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbuer 스펙트럼은 이중선을 나타내는 것으로 보아 각각의 선이 Ge와 Cu 자리로 치환되어 들어간 Fe 이온에 의한 것으로 생각된다. 또한 $T_{sp}$ 이하에서 Mossbauer 변수들의 불연속을 이중체가 형성되면서 나타나는 이온들의 위치 이동에 관련시켜 해석하였다. 본 시료외 N el온도는 715 K이고, Debye온도는 팔면체 자리가 540 K, 사면체 자리가 380 K임을 알아냈다.

• Bulletin of the Korean Chemical Society
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• 제31권7호
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• pp.1976-1980
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• 2010

A simple and reliable method has been developed to selectively separate and concentrate trace amounts of Fe(III) ions from water and food samples by using flame atomic absorption spectrometry. A new reagent, 5-hydroxy-4-ethyl-5,6-di-pyridin-2-yl-4,5-dihydro-2H-[1,2,4] triazine-3-thione, was synthesized and characterized by using FT-IR spectroscopy and elemental analysis. Effects of pH, concentration and volume of elution solution, sample flow rate, sample volume and interfering ions on the recovery of Fe(III) were investigated. The optimum pH was found to be 5. Eluent for quantitative elution was 10 mL of 2 M HCl. The preconcentration factor of the method, detection limit (3s/b, ${\mu}gL^{-1}$) and relative standard deviation values were found to be 25, 4.59 and 1%, respectively. In order to verify the accuracy of the method, two certified reference materials (TMDA 54.4 lake water and SRM 1568a rice flour) were analyzed. The results obtained were in good agreement with the certified values. The method was successfully applied to the determination of Fe(III) ions in water and food samples.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• 한국세라믹학회지
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• 제40권5호
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• pp.405-409
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• 2003

The effect of substitution of Gd ions for Ca ions in the B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$(C $a_{1-x}$ G $d_{x}$)$_{2.03}$ C $u_{3.06}$ $O_{ 10+{\delta}}$/ (x=0.0~0.06) was investigated by measuring x-ray diffraction patterns, lattice constants, do resistivity and Hall effect. We found the solubility limit of Gd in the 110 K phase to be x < 0.015. Within the solubility limit, the c-axis seemed to decrease with increasing x. In the region of the 110 K single phase, the critical temperature $T_{c}$ gradually decreased with an increasing the Gd concentration x, corresponding to a small change of the carrier concentration.

• 한국자기학회지
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• 제3권1호
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• pp.18-22
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• 1993

$Cu_{x}Zn_{1-x}Fe_{2}O_{4}(0{\leq}x{\leq}1)$의 이온분포 및 자기적 성질을 X-선 회절법과 $M\"{o}ssbauer$ 분광법으로 연구하였다. 결정구조는 $0{\leq}x{\leq}0.9$의 영역에서 입방 스피넬이다. $ZnFe_{2}O_{4}$의 이온분포는 ${(Zn_{1-x}Fe_{x})}_{A}{[Zn_{x}Fe_{2-x}]}_{B}O_{4}$:x=0.1 이다. Curie 온도 이하의 $M\"{o}ssbauer$ spectrum에서 $Fe^{3+}$ 이온의 분포상태를 $0{\leq}x{\leq}1$의 전 영역에서 얻었다. Cu의 농도 x가 증가함에 따라서 사면체자리에 들어가는 $Fe^{3+}$ 이온의 수가 증가하고 Cu-Zn 훼라이트의 Curie 온도가 높아진다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2003년도 학술.기술논문 발표회
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• pp.43-48
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• 2003

This paper investigate that the effect of the concrete containing mineral admixtures(pozzolanic materials such as fly-ash, ground granulated blast-furnace slag, silica fume and meta kaolin) on the resistance properties to chloride ion invasion. The purposed testing procedure was applied to the concrete added mineral admixtures for 3~4 replacement ratios under W/B ratios ranged from 0.40 to 0.55. For the electrical migration test, Tang and Nilsson's method was used to estimate the migration coefficient of chloride ion. As a results, the W/B ratios, kinds of admixture and replacement ratios, water curing periods had a great effect on the migration coefficient of chloride ion, and the optimal replacement ratios of admixture had a limitation for each admixtures. Also, the addition of mineral admixtures by mass(replacement of OPC) enhanced the resistance of the mixture to chloride penetration compared with the plain concrete. The amount of acid soluble chloride ions and water soluble chloride ions were varied with the kinds of mineral admixtures. The compressive strength was shown related to the migration coefficient of chloride ion, the compressive strength increased with the decreasing migration coefficient of chloride ion. Below the 50MPa, the variation of migration coefficient of concrete added mineral admixtures was bigger than plain concrete.

• 한국분말재료학회지
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• 제17권5호
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• pp.399-403
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• 2010

The effects of $MnO_2$ doping on the crystal structure, ferroelectric, and piezoelectric properties of (K,Na)$NbO_3$ (KNN) ceramics have been investigated. $MnO_2$ was found to be effective in enhancing the densification and grain growth during sintering. X-ray diffraction analysis indicated that Mn ions substituted B-site Nb ions up to 2 mol%, however, further doping induced unwanted secondary phases. In comparison with undoped KNN ceramics, the well developed microstructure and the substitution to B-sites in 2 mol% Mn-doped KNN ceramics resulted in significant improvements in both piezoelectric coupling coefficient and electromechanical quality factor.