• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.603-610
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• 1991

An oxygen deficient perovskite (CaLa)(MgMn)O5.43, with the cubic unit cell parameter of 3.826$\AA$, was prepared 115$0^{\circ}C$ for 10 hrs under the ambient oxygen gas pressure. The average oxidation state of manganese was determined to be 3.86 by the iodometric titration, so that the perovskite could be formulated as (CaLa) ({{{{ { MgMn}`_{ chi } ^{II } }}{{{{ { Mn}`_{ y} ^{III } }}{{{{ { Mn}`_{1- chi -y } ^{IV } }})O5.43 (2x+y=0.14). From X-ray photoelectron spectroscopy, the manganese ions in the lattice are mostly tetravalent, but two paramagnetic configurations were observed in the EPR spectrum: One sharp isotropic signal with hyperfines (ΔH 50 G, g=1.997$\pm$0.002 and │A│=82(4)$\times$10-4 cm-1) and a broad isotropic one (ΔH 1600 G, g=1.994$\pm$0.002), those which correspond respectively to Mn(II) and Mn(IV) ions. According to the magnetic susceptibility measurement, it follows the Curie-Weiss law from 20 K up to room temperature with $\mu$eff=5.23 $\mu$B, which is relatively larger than spin-only value({{{{ { mu }`_{eff} ^{s.o } }}=4.04 $\mu$B) due to the effect of weak ferromagnetic coupling. Such a result is in accord with a theory of semicovalence exchange.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.375-382
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• 1992

Molybdenum silicide films have been prepared by sputtering from a single composite MoS$i_2$ source on both P, B$F_2$respectively implanted (5${\times}10^{15}ions/cm^2$ single crystal and P implanted (5${\times}10^{15}ions/cm^2$) polycrystalline silicon substrates followed by rapid thermal annealing in the ambient of argon. The heat treatment temperatures have been varied in the range of 600-l20$0^{\circ}C$ for 20 seconds. The properties of Mo-silicide and the diffusion behaviors of dopant after the heat treatment are investigated using X-ray diffraction, scanning electron microscopy(SEM) , secondary ions mass spectrometry(SIMS), four-point probe and $\alpha-step.$ Annealing at 80$0^{\circ}C$ or higher resulted in conversion of the amorphous phase into predominantly MoS$i_2$and a lower sheet resistance. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into molybdenum silicide layers during annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.151-151
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Z Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120 ke V to a total do range of 1xHP ions/cm2 to 8xlO17 ions/cm2 at various temperatures of 298"C to 676"C. The m microstructure changes by nitrogen implantation were analyzed by using TEM, XRD 뻐d A AES, cmd then wear behavior was evaluated by ball-on-disc wear testings at various loads a and sliding velocity under unlubricated condition. Nitrogen implantation produced ZrNx nitride above 4.37x1017 ions!cm2 as well as heavy d dislocations, which enhanced microhardness of the implanted surface of up to 900 Hk from 2 200 Hk of unimplanted substrate. Hardness was also found to be increased with increasing i implantation temperature and enhanced up to OOOHk at 620 "C. the wear resistance was g greatly improved with increasing total ion do않 as well as implantation temperature. The effective enhancement of wear resistance at high dose and tem야ratures is believed d due to significant hardening associated with high degree of precipitation of Zr nitrides and g generation of prismatic dislocation I$\infty$ps.infty$ps.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.16-21
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• 2000

Magnetic properties and crystallographic properties of $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$ were studied by using x-ray diffraction, superconducting quantum interference device (SQUID) and Mossbauer spectroscopy. Our sample has orthorhombic structure and the lattice constants are a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$. The spin-Peierls (SP) transition temperatures of our sample is 13 K. The Mossbauer spectra consisted with two Zeeman sextets and one doublet due to $Fe^{3+}$ions. The Zeeman sextets come from tetrahedral $Fe^{3+}$ions and the doublets come from octahedral $Fe^{3+}$ions. The jump up of magnetic hyperfine field of 2nd Zeeman sextet and the increasing of the values of quadrupole splitting and isomer shift of doublet below SP transition temperature could be interpreted related with the atomic displacements. The N el temperature is 715 K, the Debye temperature are 540 K for octahedral site and 380 K for tetrahedral site, respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1976-1980
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• 2010

A simple and reliable method has been developed to selectively separate and concentrate trace amounts of Fe(III) ions from water and food samples by using flame atomic absorption spectrometry. A new reagent, 5-hydroxy-4-ethyl-5,6-di-pyridin-2-yl-4,5-dihydro-2H-[1,2,4] triazine-3-thione, was synthesized and characterized by using FT-IR spectroscopy and elemental analysis. Effects of pH, concentration and volume of elution solution, sample flow rate, sample volume and interfering ions on the recovery of Fe(III) were investigated. The optimum pH was found to be 5. Eluent for quantitative elution was 10 mL of 2 M HCl. The preconcentration factor of the method, detection limit (3s/b, ${\mu}gL^{-1}$) and relative standard deviation values were found to be 25, 4.59 and 1%, respectively. In order to verify the accuracy of the method, two certified reference materials (TMDA 54.4 lake water and SRM 1568a rice flour) were analyzed. The results obtained were in good agreement with the certified values. The method was successfully applied to the determination of Fe(III) ions in water and food samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.405-409
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• 2003

The effect of substitution of Gd ions for Ca ions in the B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$(C $a_{1-x}$ G $d_{x}$)$_{2.03}$ C $u_{3.06}$ $O_{ 10+{\delta}}$/ (x=0.0~0.06) was investigated by measuring x-ray diffraction patterns, lattice constants, do resistivity and Hall effect. We found the solubility limit of Gd in the 110 K phase to be x < 0.015. Within the solubility limit, the c-axis seemed to decrease with increasing x. In the region of the 110 K single phase, the critical temperature $T_{c}$ gradually decreased with an increasing the Gd concentration x, corresponding to a small change of the carrier concentration.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.18-22
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• 1993

The cationic distributions and magnetic properties of $Cu_{x}Zn_{1-x}Fe_{2}O_{4}(0{\leq}x{\leq}1)$ have been studied by X-ray diffraction and $M\"{o}ssbauer$ spectroscopy. The crystal structures are cubic spinels in the range $0{\leq}x{\leq}0.9$. The ionic distribution of ${(Zn_{1-x}Fe_{x})}_{A}{[Zn_{x}Fe_{2-x}]}_{B}O_{4}$, where x=0.1. The distribution of $Fe^{3+}$ ions was extracted from the $M\"{o}ssbauer$ spectra below Curie temperature in the whole range $0{\leq}x{\leq}1$. The number of $Fe^{3+}$ ions in the tetrahedral sites and Curie temperature of Cu-Zn ferrite increase with increasing Cu-concentration.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2003.11a
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• pp.43-48
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• 2003

This paper investigate that the effect of the concrete containing mineral admixtures(pozzolanic materials such as fly-ash, ground granulated blast-furnace slag, silica fume and meta kaolin) on the resistance properties to chloride ion invasion. The purposed testing procedure was applied to the concrete added mineral admixtures for 3~4 replacement ratios under W/B ratios ranged from 0.40 to 0.55. For the electrical migration test, Tang and Nilsson's method was used to estimate the migration coefficient of chloride ion. As a results, the W/B ratios, kinds of admixture and replacement ratios, water curing periods had a great effect on the migration coefficient of chloride ion, and the optimal replacement ratios of admixture had a limitation for each admixtures. Also, the addition of mineral admixtures by mass(replacement of OPC) enhanced the resistance of the mixture to chloride penetration compared with the plain concrete. The amount of acid soluble chloride ions and water soluble chloride ions were varied with the kinds of mineral admixtures. The compressive strength was shown related to the migration coefficient of chloride ion, the compressive strength increased with the decreasing migration coefficient of chloride ion. Below the 50MPa, the variation of migration coefficient of concrete added mineral admixtures was bigger than plain concrete.

• Journal of Powder Materials
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• v.17 no.5
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• pp.399-403
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• 2010

The effects of $MnO_2$ doping on the crystal structure, ferroelectric, and piezoelectric properties of (K,Na)$NbO_3$ (KNN) ceramics have been investigated. $MnO_2$ was found to be effective in enhancing the densification and grain growth during sintering. X-ray diffraction analysis indicated that Mn ions substituted B-site Nb ions up to 2 mol%, however, further doping induced unwanted secondary phases. In comparison with undoped KNN ceramics, the well developed microstructure and the substitution to B-sites in 2 mol% Mn-doped KNN ceramics resulted in significant improvements in both piezoelectric coupling coefficient and electromechanical quality factor.