• Economic and Environmental Geology
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• v.57 no.4
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• pp.371-386
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• 2024

This paper presents analytical insights regarding into the occurrence of gold within organic matter, which is hosted by solid bitumen and closely associated with uranium ores in the Late Permian Kővágószőllős Sandstone Formation in Western Mecsek, South-West Hungary. The study utilizes a range of analytical techniques, including X-ray powder diffraction (XRPD) and wavelength dispersive X-ray fluorescence (WD-XRF) for comprehensive mineralogical and elemental analysis; organic petrography and electron microprobe analysis for characterizing organic matter; and an organic elemental analyzer for identifying organic compounds. A three-step sequential extraction method was used to liberate gold from organic matter and sulfide minerals, employing KOH, HCl, and aqua regia, followed by inductively coupled plasma optical emission spectroscopy (ICP-OES) to quantify gold contents. The organic matter is identified as comprising two vitrinite types (telinite V1 and reworked V2) and three solid bitumen forms: nonfluorescing (B1) and fluorescing (B2) fillings within the V1, as well as homogenous pyrobitumen (PB) occupying narrow cracks and voids within globular quartz. Despite the samples exhibiting low total organic carbon content (<1 wt%), they display high sulfur content (up to 6 wt%) and the sequentially extracted noble metal content from the organic matter is found to total 7.45 ppm gold. The research findings suggest that organic matter plays crucial roles in ore mineralization processes. Organic matter acts as an active component in the migration of gold, uranium, and hydrocarbons within sulfur-rich hydrothermal fluids. Additionally, organic matter contributes to the entrapment and enrichment of gold in hetero-atomic organic fractions, forming metal-organic compounds. Moreover, uranium inclusions are observed as oxide/phosphate minerals within solid bitumen and associated vitrinite particles. These insights into the occurrence and distribution of gold within organic matter highlight substantial exploration potential, guiding additional research activities focused on organic matter within the Kővágószőllős Sandstone Formation at the Western Mecsek deposit.

• Korean Journal of Optics and Photonics
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• v.35 no.5
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• pp.241-249
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• 2024

In this study, we demonstrate compact mode-locked laser operations using three different kinds of Yb³⁺-doped potassium double tungstate laser crystals, Yb:KGdW, Yb:KYW and Yb:KLuW, operating near 1040 nm at a repetition rate of 405 MHz. We utilized a semiconductor saturable absorber mirror as a mode locker, successfully maintaining mode-locked states for several hours without any Q-switching instabilities for all types of laser crystals. Notably, the Yb:KGdW mode-locked laser produces the shortest pulse with a duration of 108 fs, delivering 125 mW of output power. Additionally, we conducted a numerical analysis by solving the Haus master equation, which incorporates the effect of group delay dispersion and self-phase modulation, using the standard split-step Fourier method.

• The Journal of Engineering Geology
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• v.22 no.1
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• pp.27-37
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• 2012

To investigate the effect of aquifer disturbance on hydraulic properties while well drilling at unconsolidated aquifer, the following tests were conducted: the surge block and air-surging methods, which are well development methods used after well drilling; and step-drawdown tests and constant-rate pumping tests, which are used to assess changes in the aquifer after well drilling and development. The result of step-drawdown tests indicated that drawdown for a pumping-rate of $700m^3/day$ was 21.62 m after well development, decreasing 4.39 m from 26.01 m after well drilling. The skin factor used to identify the well properties decreased from 7.92 after well drilling to 5.04 after well development, respectively, which shows the improvement of well. Constant-rate pumping tests revealed a small increase in aquifer transmissivity after well development at MW-2, -3, and -4, centering around pumping well, from $1.684{\times}10^{-3}{\sim}4.490{\times}10^{-3}m^2/sec$ to $4.002{\times}10^{-3}{\sim}4.939{\times}10^{-3}m^2/sec$. MW-1, however, showed decline in hydraulic conductivity from $1.018{\times}10^{-2}m^2/sec$ to $6.988{\times}10^{-3}m^2/sec$, which was caused by a small decrease of aquifer permeability around monitoring well MW-1 due to latent factor of air interception and clogging in aquifer during surging. This finding indicates that fine particles have an effect on hydraulic properties at unconsolidated aquifers during well drilling; therefore, we consider that well drilling and development have an effect on hydraulic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Tunnel and Underground Space
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• v.28 no.6
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• pp.670-691
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• 2018

This study presents the research results of the BMT(Benchmark Model Test) simulations of the DECOVALEX-2019 project Task B. Task B named 'Fault slip modelling' is aiming at developing a numerical method to predict fault reactivation and the coupled hydro-mechanical behavior of fault. BMT scenario simulations of Task B were conducted to improve each numerical model of participating group by demonstrating the feasibility of reproducing the fault behavior induced by water injection. The BMT simulations consist of seven different conditions depending on injection pressure, fault properties and the hydro-mechanical coupling relations. TOUGH-FLAC simulator was used to reproduce the coupled hydro-mechanical process of fault slip. A coupling module to update the changes in hydrological properties and geometric features of the numerical mesh in the present study. We made modifications to the numerical model developed in Task B Step 1 to consider the changes in compressibility, Permeability and geometric features with hydraulic aperture of fault due to mechanical deformation. The effects of the storativity and transmissivity of the fault on the hydro-mechanical behavior such as the pressure distribution, injection rate, displacement and stress of the fault were examined, and the results of the previous step 1 simulation were updated using the modified numerical model. The simulation results indicate that the developed model can provide a reasonable prediction of the hydro-mechanical behavior related to fault reactivation. The numerical model will be enhanced by continuing interaction and collaboration with other research teams of DECOVALEX-2019 Task B and validated using the field experiment data in a further study.

• Restorative Dentistry and Endodontics
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• v.33 no.1
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• pp.45-53
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• 2008

The purpose of this study was to determine the effects on the elastic moduli of the adhesive and the hybrid layer from thermocycling. Twenty one human molars were used to create flat dentin surfaces. Each specimen was bonded with a light-cured composite using one of three commercial adhesives (OptiBond FL [OP], Clearfil SE Bond [CL], and Xeno III [XE]). These were sectioned into two halves and subsequently cut to yield 2-mm thickness specimens; one specimen for immediate bonding test without thermocycling and the other subjected to 10,000 times of thermocycling. Nanoindentation test was performed to measure the modulus of elasticity of the adhesive and the hybrid layer, respectively, using an atomic force microscope. After thermocycling, XE showed a significant decrease of the modulus in the adhesive layer (p < 0.05). Adhesives containing hydrophilic monomers are prone to hydrolytic degradation. It may result in the reduced modulus of elasticity, which leads to the mechanically weakened bonding interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of the Korean Chemical Society
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• v.4 no.1
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• pp.15-17
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• 1957

1. Preparation of Titanium tetrachloride; The following precesses were strictly followed as the preliminary step to obtain pure $TiOCl_2$, titanyl chloride; First, pure Titanium Oxide mixed with carbon is rolled into pills. After drying up perfectly, these pills are heated at 900∼1000${\circ}C$. And then the pills are subjected to the flow of $Cl_2$ gas in a quartz tube heated to 900-1000${\circ}C$. Thus Titanium tetrachloride is obtained. 2. Preparation of $TiOCl_2$ ; Yellowish trobrown solution is made by pouring 80 g of conc. HCl (sp.gr. 1.19) to 45 gr of Titanium tetrachloride (approx. 2 times of theoretical amount). Then this solution is kept settled for 5-days in a desiccator filled with phosphorous pentoxide at room temperature. As the colorless amorphous solid thus obtained is washed with aceton, 36.5 g of the pure salt are obtained. 3. Determination of composition. The analysis of the sample taken from the deposit desiccated gives the following data; (A) Qualitative analysis; a) $Ti(OH)_4$ is precipitated by adding NaOH in water solution of the salt. b) Adding $AgNO_3$ solution, the water solution of the salt gives white precipitate of AgCl. c) When acid and $H_2O_2$ are added, the solution turns its color to redish brown (This proves that $TiO^{++}$ was converted into $TiO^{++}$ by oxidation of $H_2O_2$. (B) Quantitative analysis; a) $Ti(OH)_4$ precipitated by $10{\%}$ NaOH isalitatsubjected consecutively to the filtration and ignition in porcelain crucible at approx. 1000${\circ}C$. , then $TiO_2$ thus formed is weighed and calculated into Ti content. b) Chlorine involved in water solution of the salt is determined by Vorhardt method. Result: The values obtained from previous analysis, devied by their atomic weight gives the following composition: Ti : Cl = 1 : 2 Therefore $TiOCl_2$ should be given as its molecular formula. 4. Summary. When $TiCl_4$ is additated into conc. HCl, $TiO^{++}$ formed exists as a stable form, and forms $TiOCl_2$. However $TiOCl_2$ is unstable to heating. When the temperature is raised to $65{\circ}C$the decomposition of the solution is accelerated, and gives $TiO_2$ aq. $TiOCl_2$ in addition is highly hygroscopic.

• Analytical Science and Technology
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• v.27 no.6
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• pp.352-356
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• 2014

Various studies have been done to improve the properties of the steel by adding boron to the steel. Some studies have reported on the analysis of the boron in steel by AAS (atomic absorption spectrometry), ICP-OES(inductively coupled plasma-optical emission spectrometry), ICP-MS (inductively coupled plasma/mass spectrometry). The volatile loss of boron of steel in sample digestion and the separation procedure for avoiding matrix effect by high concentration of iron are difficulties for determination of boron in steel. The method to determine boron in steel by ICP-MS was developed without volatilization of boron in sample digestion step with $HNO_3-NH_4HF_2$ digestion method, and the additional separation process for avoiding matrix effect. Complete decomposition of steel with $HNO_3-NH_4HF_2$ digestion method, and boron determination by ICP-MS in the matrix of high concentration of iron were possible. Quantitative recoveries of boron in certified standard steel by new method in this study were 103 to 111%, and the relative standard deviation is less than 5%. The method detection limit was $1.17{\mu}g/g$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.