• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2131-2134
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• 2015

In this study, It has been demonstrated a new and realizable possibility of the ferroelectric random access memory devices by all solution processing method with paper substrates. Organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin films were formed on paper substrate with Al electrode for the bottom gate structure using spin-coating technique. Then, they were subjected to annealing process for crystallization. The fabricated PVDF-TrFE thin films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It was found from polarization versus electric field (P-E) measurement that a PVDF-TrFE thin film on paper substrate showed very good ferroelectric property. This result agree well with that of a PVDF-TrFE thin film fabricated on the rigid Si substrate. It anticipated that these results will lead to the emergence of printable electron devices on paper. Furthermore, it could be fabricated by a solution processing method for ferroelectric random access memory device, which is reliable and very inexpensive, has a high density, and can be also fabricated easily.

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.569-574
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• 1991

Six free base porphyrins were synthesized by reacting pyrrole with benzaldehyde or its derivatives and then reacted with metal chlorides to prepare corresponding metal complexes. In addition, polymer-bonded porphyrins were synthesized by treating chloromethylated styrene-divinyl benzene (1%) copolymer beads with meso-tetra (p-aminophenyl)porphyrin (TNPP) solution and then treated with cupric chloride to obtain Cu(Res-NH-TPP-$NH_2$). The porphyrin compounds were characterized by visible, inffrared and electron spin resonance spectral analyses. The metal contents of metalloporphyrins were determined by atomic adsorption spectrophotometry. The synthesized porphyrin compounds were subsequently examined for their catalytic strength and found the activity to increase in the following order: free base porphyrins; metalloporphyrins; polymer-bonded metalloporphyrin. Among metalloporphyrins, Cu-TNPP showed the greatest catalytic power.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• Macromolecular Research
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• v.15 no.7
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• pp.688-692
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• 2007

The hydrogen-bonding induced alternating multilayer thin films of dendrimers and block copolymer micelles were demonstrated. The block copolymer micelles derived from amphiphilic poly(2-ethyl-2-oxazoline)block-$poly({\varepsilon}-carprolactone)$ (PEtOz-PCL) in aqueous phase have a core-shell structure with a mean hydrodynamic diameter of 26 nm. The hydrogen bonding between the PEtOz outer shell of micelle and the carboxyl unit of poly(amidoamine) dendrimer of generation 4.5 (PAMAM-4.5G) at pH 3 was utilized as a driving force for the layerby-layer alternating deposition. The multilayer thin film was fabricated on the poly(methyl methacrylate) (PMMA) thin film spin-coated on silicon wafer or glass substrate by the alternate dipping of PEtOz-PCL micelles and PAMAM dendrimers in aqueous solution at pH 3. The formation of multilayer thin film was characterized by using ellipsometry, UV-vis spectroscopy, and atomic force microscopy. The PEtOz outer shell of PEtOz-PCL micelle provided the pH-responsive hydrogen bonding sites with peripheral carboxylic acids of PAM AM dendrimer. The multilayer thin film was reversibly removed after dipping in aqueous solution at $pH{\geq}5.6$ due to dissociation of the hydrogen bonding between PEtOz shell of PEtOz-PCL micelle and peripheral carboxyl units of PAMAM dendrimer.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.277-280
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• 2011

We studied the relative stability and atomic structure of five $C_{20}^{2+}$ isomers obtained by two-electron ionization of a $C_{20}$ cage (the smallest fullerene). All the isomers are bond-stretch isomers, i.e., they differ in bond length. In particular, in one of the isomers with Ih symmetry, all the bond lengths are equal. Full geometry optimizations of the dipositive ion $C_{20}^{2+}$ were performed using the hybrid density functional (B3LYP/6-31G(d)) methods. All isomers were found to be true minima by frequency analysis at the level of B3LYP/6-31G(d) under the reinforced tight convergence criterion and a pruned (99,590) grid. The zero-point correction energy for the cage bond-stretch isomers was in the increasing order $D_{2h}<C_{2h}<C_2<T_h<I_h$ of $C_{20}^{2+}$. The energy difference among the isomers of cage dipositive ions was less than that among neutral cage isomers. Our results suggest that these isomers show bond-stretch isomerism and that they have an identical spin state and an identical potential energy curve. Although the predominant electronic configurations of the isomers are similar, the frontier orbital characteristics are different, implying that we could anticipate an entirely different set of characteristic chemical reactions for each type of HOMO and LUMO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.376-376
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• 2007

In Liquid Crystal Display (LCD) manufacturing, the organic over coat materials over coat materials for insulation layer of color filter with acryl ate was widely used. Therefore, we approach that the organic overcoat material can use to insulation layer for color filter and liquid crystal (LC) alignment layer in this research. The LC aligning capabilities was successful stuided for the first time. The organic overcoat layer and polymer layer was coated by spin-coating. In order to characterize the LC alignment, electric optic and residual DC and atomic force microscopy (AFM) image was used. The good LCD aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. Also the good LCD alignment capabilities treated polymer on surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1800 eV can be achieved. Comparing electro-optical characteristics between the Polyimide (PI) and the overcoat, the resultant transmittance of the overcoat considerably matched that of the PI and the residual DC also exhibited similar features with the PI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.370-370
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• 2007

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

• Polymer(Korea)
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• v.35 no.4
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• pp.370-374
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• 2011

A conductive PANI solution was successfully fabricated by doping with camphorsulfonic acid and the polymerization of aniline and the confirmation of doping were characterized by FTIR spectroscopy. In organic thin film transistors, PANI gate electrodes were spin-coated on a PES substrate and their conductivity variations were monitored by a 4-probe method with different annealing temperatures. The surface properties of PANI thin films were investigated by an AFM and an optical microscope, OTFTs with PANI gate electrode had characteristics of carrier mobility as large as 0.15 $cm^2$/Vs and on/off ratio of $2.4{\times}10^6$, Au gate OTFTs with the same configuration were fabricated to investigate the effect of polymer gate electrode for the comparison of device performances. We could obtain the comparable performances of PANI devices to those of Au gate devices, resulting in an excellent alternative as an electrode in flexible OTFTs instead of an expensive Au electrode.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.43-47
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• 2011

It is known that the Fe-Al transition metal compounds have a lot of disagreement about structural stability and magnetism. In this study, the correlation between magnetism and atomic structure of ordered $B_2$, $L1_2$, and $D0_3$ structured Fe-Al compounds has been investigated using the all-electron full-potential linearized augmented plane wave (FLAPW) method based on the generalized gradient approximation (GGA). We found that considered all the structures were calculated to be stabilized in a ferromagnetic state. The calculated spin magnetic moments of the Fe atoms for B2 and $L1_2$ structures were 0.771 and 2.373 ${\mu}_B$, respectively, and that of Fe(I) and Fe(II) in $D0_3$ structure calculated to be 2.409 ${\mu}_B$, 1.911 ${\mu}_B$, respectively. In order to investigate structural stability between $L1_2$ and $D0_3$ structures, we performed the formation enthalpy calculations. As a result, the $D0_3$ structure is found to be more favorable than $L1_2 one by energy difference 16 meV/atom, which is well consistent with the experimental observation. We understood about structural stability and magnetism for Fe-Al compounds in terms of analysis of their atomic and electronic structures.