• 대한화장품학회지
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• 제34권4호
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• pp.269-274
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• 2008

본 연구를 통해 반도체 산업에서 유래된 마이크로웨이브 증폭 에칭기술(MEE)을 이용하여, 마이카의 표면 구조를 변화시키고 오일 흡유량을 조절할 수 있었다. 마이크로웨이브 에너지가 마이카에 조사되면, 마이카 표면이 몇 분 이내에 에칭이 된다. 에칭의 결과로 마이카의 오일 흡유량이 증가되고, 마이카 $SiO_2$층의 표면 변화에 의해 백색도가 증가한다. 추가적으로, 땀을 흡수한 이후에도 높은 백색도가 유지된다. 마이카의 표면구조의 변화는 불산에 슬러리화된 마이카에 마이크로웨이브 조사를 통해서 이루어졌다. 에칭의 정도는 산의 농도, 조사 시간, 조사 에너지의 양, 슬러리의 농도에 의해 조절되었다. 에칭된 마이카의 표면 구조는 '달' 표면 모양과 유사하게 보인다. 표면적과 거칠기 등의 특성은 Brunauer-Emmett-Teller (BET), atomic force microscopy (AFM), scanning electron microscopy (SEM), Spectrophotometer, goniophometer로 측정되었다.

• 한국광학회지
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• 제35권4호
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• pp.175-183
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• 2024

근래 광통신, 광센서, 양자광학 등의 다양한 연구 분야에서 광IC 소자를 이용한 광신호 처리 연구가 활발히 진행되고 있으며, 광IC 제작에 이용되는 재료들 중 특히 폴리머 재료는 고유의 특징을 바탕으로 폭넓게 연구개발되고 있다. 폴리머 기반 광IC 소자를 제작하기 위해서는 광도파로 단면 구조를 정확히 제작하기 위한 제작 공정을 확립하는 것이 중요하며, 특히 안정적인 소자 특성을 유지하고 대량생산 시의 수율을 높이기 위해서는 재현성이 높고 오차 수용 범위가 넓은 공정과 제작 조건을 설정하는 것이 필요하다. 본 연구에서는 원자층 증착(atomic layer deposition, ALD) 공정을 도입하여 폴리머 광도파로 소자를 효율적으로 제작할 수 있는 방법을 제안하였으며, 기존의 포토 레지스트나 금속 박막 증착을 이용하는 방법에 비해 광도파로 코어 형상을 더욱 정밀하게 제작할 수 있음을 확인하였다. 본 연구에서는 ALD 공정을 도입하여 코어의 크기가 1.8 × 1.6 ㎛²인 폴리이미드 광도파로를 제작하여 광도파로의 손실을 측정하고, 이와 함께 광파워 분배기인 다중모드 간섭(multi-mode interference) 광도파로 소자를 제작하여 특성을 측정하였다. 이때 기존의 제작과정에서 문제시되었던 에칭 마스크 층의 크랙 현상은 나타나지 않았으며, 광도파로 패턴 단면의 수직성도 우수하였고, 도파로의 전파손실 또한 1.5 dB/cm 이하로 양호하였다. 이로써 ALD 공정이 대량생산을 위한 폴리머 광소자 제작 공정에 적합한 방법임을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.37-40
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• 2003

Amorphous $Al_2O_3$ nanotubes have been fabricated by utilizing the ZnO nanowires as template with wet etching method. ZnO nanowires synthesized by thermal evaporation are conformally coated with $Al_2O_3$ by atomic-layer deposition(ALD) method. The $Al_2O_3$-coated ZnO nanowires are of core-shell structure; ZnO core nanowires and $Al_2O_3$ shells. When the $ZnO/Al_2O_3$ core-shell structure is dipped in $H_3PO_4$ solution at $25^{\circ}C$ for a 6 min, the core ZnO materials are completely etched, and only $Al_2O_3$ nanotubes are remained. This nanotube fabrication is technically easier than others, and simply approachable. Transmission electron microscopy shows that the $Al_2O_3$ nanotubes have various thicknesses that can be controlled.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국결정성장학회지
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• 제9권6호
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• pp.597-600
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• 1999

단결정규소 웨이퍼를 15% HF-에탄올 용액에서 양극 산화시켜 다공질규소를 얻는 과정에서 전류밀도와 에칭시간에 따라 굴절률이 주기적으로 변하는 다층의 다공질규소층(porous silicon multilayers)을 구현하였다. 그리고 다층의 다공질규소층(I), 다공질규소 발광층, 또 다른 다층의 다공질규소층(II)의 순으로 구성된 porous silicon microcavity(PSM)를 제작하고 그 물성을 조사하였다. PSM 상하에 위치한 다층의 다공질규소층의 단면을 AFM(Atomic Force Microscope)으로 조사한 결과 고굴 절률과 저굴절률이 주기적으로 교차하는 층이 균일하게 형성되었으며, 중앙의 다공질규소 발광층도 균일하게 나타났다. 다층의 다공질규소층 및 다공질규소 발광층의 두께를 각각 실효파장의 1/4배 및 2배가 되도록 하였을 때 특정파장의 필터로 쓰일 수 있는 브래그 반사경(Bragg reflector)의 특성이 나타났다. 또한 PSM의 발광 스펙트럼은 그 반치폭이 현저히 감소하고 발광의 세기가 크게 증가되는 경향을 보였다.

• ETRI Journal
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• 제38권4호
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• 한국재료학회지
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• 제24권12호
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• pp.682-688
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• 2014

Physical and chemical changes in a polished wafer and in $2.5{\mu}m$ & $4{\mu}m$ epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for $SiO_2$ removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished $2.5{\mu}m$ and $4{\mu}m$ Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, $2.5{\mu}m$ and $4{\mu}m$, due to the meaningful differences in the initial surface chemical and physical properties.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.241-241
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• 2015

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어 할 수 있는 원자층 식각기술 많은 관심을 받고 있다. 실리콘을 대체 할 수 있는 우수한 전기적 특성을 가진 III-V 화합물 반도체 재료인 InGaAs에 대한 원자층 식각을 통하여, 흡착가스에 대한 표면흡착 및 탈착가스에 대한 표면탈착 메커니즘을 고찰하였다. 또한, 성분 및 표면분석 장치를 이용하여 InGaAs 원자층 식각 특성에 대해 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).