• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1377-1382
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• 1995

A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.

• Nuclear Engineering and Technology
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• v.24 no.3
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• pp.252-262
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• 1992

The intent of this study is to develop an efficient calculation method which can be used to analyze the heterogeneous time-dependent reactor problems. By using the nodal theory one can not only reduce the calculational efforts, but accurately determine the group dependent flux densities averaged over the entire homogeneous nodes. This method uses correction factors(called“discontinuity factors”) in a rigorous manner to obtain the relationship between the node-averaged flux and the surface-averaged fluxes and currents. The discontinuity factors are calculated from the node-averaged fluxes, diffusion coefficients, and the discontinuity factors of the previous time step. The test results for two benchmark problems demonstrate the accuracy and efficiency of the method developed for the transient application in which assembly-size nodes can be used.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.67-72
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• 1996

The crystallographic and magnetic properties of the ferrimagnetic $CoFe_2O_4$ have been studied by X-ray and Mossbauer measurements. The crystal structure is found to be cubic spinel structure with the lattice constant $a_{0}=8.381{\pm}0.005{\AA}\;and\;a_{0}=8.391{\pm}0.005{\AA}$ for slow-cooled and quenched CoFeZ04' respectively. Mossbauer spectra of $CoFe_2O_4$ have been taken at various temperatures ranging from 13 to 780 K. The isorrer shifts indicate that the valence states of the Fe ions for tetrahedral(A) and octahedral(B) sites have ferric character. Debye temperatures for the A and B sites are found to be ${\theta}_A=734{\pm}5K\;and\;{\theta}_B=248{\pm}5K$ for slow-cooled and ${\theta}_A=531{\pm}5K\;and\;{\theta}_B=197{\pm}5K$ for quenched, respectively. Atomic migration from the A to the B sites starts near 400 K and 350 K for slow-cooled and quenched $CoFe_2O_4$, respectively, am increases rapidly with increasing temperature to such a degree that about 69 % for slow-cooled and 91 % for quenched of the ferric ions on the A sites have rmved over to the B sites at 700 K.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.209-215
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• 2002

This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.564-567
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• 2012

Optical fibers are going to be used for telecommunication, image fibers, sensors under irradiation in nuclear power plants and various irradiation facilities. Especially, Temperature detection sensors using Raman light scattering, temperature or strain sensors using fiber gratings, magnet-optical sensors using photo-magnetic effect, are already commercialized. However, When fibers are exposed to ionizing radiation, color centers are formed in fibers which reduces their light transmission, and it is limited in applying under radiation environments. In this study, $Co^{60}$ gamma-ray induced optical attenuation on Ge-doped single mode(SM) fiber has been measured. Gamma-ray is irradiated for 4hours at the dose rate of 0.5kGy/hr, 2kGy/hr, 8kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur precisely. Furthermore, dose rate effect that the higher dose rate in the same total dose, the more increase loss of optical fiber and annealing effect that the higher the loss after irradiation, the more increase the recovery rate of the loss are observed in the fiber. This results plan to make use of bases in the study of the radiation-hardened optical fiber.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.463-467
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• 2007

Structure and optical properties of ZnO epilayers grown on oxygen- and hydrogen-plasma treated sapphire substrates by plasma-assisted molecular beam epitaxy (denoted as samples A and B, respectively) have been investigated by various techniques. The crystal quality and structural properties of the surface for the ZnO epilayers were investigated by high-resolution X-ray diffraction and atomic force microscope. For investigating the optical properties of excitonic transition of ZnO, we carried out photoluminescence experiments as a function of temperature. The free exciton, bound exciton emission and their phonon replicas were investigated as a function of temperature from 10 to 300 K, and the intensity of excitonic PL peak emission from the sample A is found to be higher than that of sample B. From the results, we found that sample A has better crystal structure quality and optical properties as compared to sample B. The number of oxygen vacancies may be decreased in sample A, resulting in an enhancement of the crystal quality and a higher intensity of excitonic emission band as compared to sample B.

• Journal of Conservation Science
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• v.35 no.6
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• pp.631-640
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• 2019

The purpose of this study was to compare analytical results of sand iron bars reproduced by the traditional iron-making method through a destructive analysis and a non-destructive analysis. For these studies, we produced two types of samples. One was sample(SI-A), a part of the sand iron bar for destructive analysis. The other was SI-B(9 ㎠) for non-destructive analysis. A metallurgical microscope and scanning electron microscope were used for the destructive analysis, and neutron imaging analysis with the Hokkaido University Neutron Source (HUNS) at Hokkaido University, Japan, was used for the non-destructive analysis. The results obtained by destructive analysis showed that there was ferrite and pearlite of fine crystallite size, and some of these showed Widmanstätten ferrite microstructure grown within the pearlite and coarse ferrite at the edge of the specimen. The results from the neutron imaging analysis showed that there was also ferrite and pearlite with 3 ㎛ α-Fe of BCC structure. Based on these results, neutron imaging analysis is capable of identifying material characteristics without destroying the object and obtaining optimal research results when applying it to objects of cultural heritage.

• Journal of the Korean Magnetics Society
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• v.7 no.2
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• pp.76-81
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• 1997

$Cu_{0.9}Ni_{0.1}Fe_2O_4$ has been studied with Mossbauer spectroscopy and X-ray diffraction. The crystal structure is found to be a cubic spinel with the lattice constant $a_0=8.386{\AA}$. The Curie temperature is determined to be $T_c=755K$ for a heating rate of 5 K/ min. The Mossbauer spectra consist of two six-line patterns corresponding to $Fe^{3+}$ at the tetrahedral(A) and octahedral(B) sites. Debye temperatures for A and B sites are found to be 568 k and 194 K, respectively. Atomic migration of $Cu_{0.9}Ni_{0.1}Fe_2O_4$ begins near 350 K and increases rapidly with increasing temperature such a degree that 71% of the ferric ions as A sites have moved over to the B sites at 550 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.404-404
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• 2012

저차원계 탄소 동소체는 특유의 구조에서 기인하는 우수한 물리적 성질로 인해 각광받고 있는 물질이다. 탄소원자가 육각형 격자 모양을 지닌 2차원계 물질인 그래핀(graphene)은 뛰어난 전기적, 물리적, 광학적 성질로 인해 전계효과 트랜지스터(field effect transistors), 투명전극(transparent electrodes), 에너지 저장체, 복합체, 화학/바이오 센서 등 다양한 분야에서 활용을 위한 연구가 진행되고 있다. 또한 그래핀이 튜브형태로 말려있는 1차원계 물질인 탄소나노튜브(carbon nanotube)의 전기적, 열적, 기계적 성질은 이를 전계방출 디스플레이(field emission display), 전도성 플라스틱, 가스 저장체, 슈퍼 커패시터 등에 적용가능하게 한다. 최근 2차원계 물질인 그래핀과 1차원계 물질인 탄소나노튜브의 장점을 극대화하기 위한 복합 나노 구조에 대한 다양한 연구가 진행되고 있는 추세이다[1-5]. 본 연구에서 그래핀-탄소나노튜브 혼성 구조의 제작은 다음과 같이 진행되었다. 우선 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 그래핀을 합성하였다. 합성된 그래핀은 메타크릴산메탈 수지(polymetylmethacrylate; PMMA)를 이용한 전사(transfer)방법을 이용하여 원하는 기판에 위치시키고, 직류 마그네트론 스퍼터링(DC magnetron sputtering)을 이용하여 탄소나노튜브의 합성을 위한 촉매층을 증착하였다. 이후 열 화학기상증착법을 이용하여 그래핀 위에 탄소나노튜브를 합성함으로써 그래핀-탄소나노튜브 혼성 구조를 제작하였다. 합성된 그래핀-탄소나노튜브의 구조적 특징은 주사 전자 현미경(scanning electron microscopy)을 통해 확인하였고, 촉매의 표면 형상 및 화학적 상태는 원자힘 현미경(atomic force microscopy)과 X선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 확인하였다. 또한 제작된 그래핀-탄소나노튜브의 전기적 특성 측정을 통해 나노전자소자로의 응용가능성을 조사하였다.